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Infineon Technologies IRF1607PBF
- Part No.:
- IRF1607PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF1607PBF.pdf
- Description:
- MOSFET N-CH 75V 142A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,486
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Product details
Overview
IRF1607PBF from Infineon Technologies is a 75 V, 142 A (TC = 25°C), ultra-low RDS(on) (0.0058 Ω typ.) N-channel HEXFET® Power MOSFET in TO-220AB package, optimized for high-current DC-DC converters and industrial motor drives requiring fast switching, 175°C junction operation, and robust unclamped inductive switching capability.
For engineers reviewing the IRF1607PBF datasheet, IRF1607PBF pinout, IRF1607PBF application, or IRF1607PBF equivalent, key selection criteria include its 1250 mJ single-pulse avalanche energy rating, 5.2 V/ns diode recovery dv/dt tolerance, 210 nC total gate charge, and validated repetitive avalanche performance up to TJmax.
Technical Context
This planar stripe HEXFET device uses advanced silicon processing to achieve 0.0058 Ω RDS(on) at VGS = 10 V and ID = 85 A, with thermal resistance RθJC = 0.40 °C/W enabling high-power density mounting. Its body diode exhibits 1.3 V forward voltage at 85 A and 25°C, with 130 ns typical reverse recovery time.
The MOSFET supports unclamped inductive switching across full temperature range (−55°C to +175°C), with avalanche current IAS rated to 85 A and EAS = 1250 mJ (single pulse). Gate threshold voltage VGS(th) is 2.0–4.0 V, ensuring reliable turn-on with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum drain-source blocking voltage; defines safe operating voltage ceiling in buck, half-bridge, and motor phase-leg topologies. |
| RDS(on) (typ) | 0.0058 Ω @ VGS = 10 V, ID = 85 A - Enables <1 W conduction loss at 100 A, critical for high-efficiency 12–48 V power stages. |
| ID (25°C) | 142 A - Continuous drain current limited by package thermal capacity; usable in high-current industrial inverters with heatsinking. |
| EAS | 1250 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without snubbers in motor drive H-bridges. |
| Qg | 210 nC (typ) - Total gate charge determines driver strength requirement; compatible with common 2–4 A peak gate drivers. |
| dv/dt (diode) | 5.2 V/ns - Maximum diode recovery dv/dt rating; ensures immunity to false turn-on during fast commutation in hard-switched topologies. |
| TJ max | +175°C - Extended junction temperature enables operation in sealed enclosures or high-ambient industrial environments. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; must be insulated from chassis unless referenced to system ground; primary thermal path. |
| Source | Power return / reference node for gate drive | Serves as common return for load current and gate driver reference; low-inductance layout essential for switching stability. |
| Gate | Control input for channel conduction | High-impedance MOS control terminal; requires low-impedance gate driver and RC snubber to suppress ringing during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.0058 Ω typ. at 10 V drive - Reduces conduction losses by >30% vs. legacy 75 V MOSFETs, directly improving efficiency in 48 V telecom and server PSUs. |
| 175°C junction rating | Rated continuous operation up to +175°C - Eliminates derating in high-ambient motor control cabinets and enables smaller heatsinks. |
| Repetitive avalanche capability | Validated up to TJmax per Fig. 15/16 - Permits reliable unclamped inductive switching in brushless DC motor phases without external protection. |
| Fast body diode | trr = 130 ns, Qrr = 690 nC - Minimizes reverse recovery losses in synchronous rectification and freewheeling paths of LLC resonant converters. |
| Lead-free construction | RoHS-compliant Pb-free plating and solderable finish - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow assembly. |
Applications
| Industrial Motor Drive | DC-DC Converter |
|---|---|
Use Scenario: High-current phase-leg switch in 3-phase BLDC inverter for HVAC compressors and pump controllers. IC Role / Device Role / Timing Role: Main power switch handling 100+ A peak phase current with PWM switching at 10–20 kHz. Use Value: Low RDS(on) and 175°C rating enable compact inverter design without forced air cooling; avalanche ruggedness prevents failure during stall events. |
Use Scenario: Primary-side switch in 1 kW isolated full-bridge DC-DC converter for 48 V server power distribution. IC Role / Device Role / Timing Role: High-duty-cycle, hard-switched main FET with 100 kHz operation and 100 A peak current. Use Value: 0.40 °C/W RθJC and 210 nC Qg support high efficiency and manageable gate drive loss; TO-220AB simplifies thermal management vs. D²PAK. |
| Uninterruptible Power Supply | Welding Inverter |
Use Scenario: Output inverter stage in 3 kVA online UPS delivering clean 230 VAC from 384 VDC bus. IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 50 Hz fundamental with high-frequency PWM carrier (20 kHz). Use Value: 1250 mJ EAS absorbs line-reactive energy during transfer switching; 5.2 V/ns dv/dt rating prevents spurious turn-on during rapid bus collapse. |
Use Scenario: Primary-side chopper in IGBT-gated arc welding inverter delivering 300 A DC output at 20–100 kHz switching. IC Role / Device Role / Timing Role: High-current, high-dI/dt switch subject to severe inductive kickback and thermal cycling. Use Value: Repetitive avalanche validation per Fig. 15/16 ensures reliability under repeated short-circuit weld starts; 142 A rating supports peak duty without current limiting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP140N75F7 | RDS(on) = 0.0048 Ω (lower), Qg = 170 nC (lower), but VDSS = 75 V same; TO-220FP package (smaller footprint, higher RθJA) | Better efficiency at light loads due to lower Qg, but reduced thermal headroom in sustained high-current operation | Select when gate drive loss dominates and heatsink area is constrained; verify case temperature does not exceed 150°C under full load. |
| IXTH120N75L2 | RDS(on) = 0.0062 Ω (slightly higher), EAS = 1000 mJ (lower), but offers enhanced dv/dt immunity (7.5 V/ns) and improved SOA in linear mode | Superior ruggedness in linear-regulation or analog pass-element use cases; less margin for unclamped inductive energy | Prefer for welding or battery-charger applications where precise current regulation precedes switching; avoid in high-EAS-demand motor phase legs. |
Compared with STP140N75F7 and IXTH120N75L2, IRF1607PBF delivers the highest balance of avalanche energy, thermal robustness, and proven industrial field reliability-making it preferred for mission-critical motor drives where transient overloads are routine.
Availability
IRF1607PBF is available at Aetrix Electronics and suitable for industrial motor drives, high-power DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRF1607PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF1607PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness industrial switching applications demanding low conduction loss, fast switching, and guaranteed avalanche performance.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF1607PBF supports 100 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and silicon, not electrical degradation; actual usable current depends on heatsink thermal resistance and ambient conditions.
Is the IRF1607PBF suitable for synchronous rectification in a 48 V to 12 V buck converter?
Yes-the device's 1.3 V body diode forward voltage at 85 A and 130 ns reverse recovery time make it viable for low-frequency synchronous rectification. However, its 210 nC gate charge increases driver loss; for >200 kHz operation, a dedicated low-Qg trench MOSFET is recommended.
Does the IRF1607PBF require a gate resistor for stability?
Yes-a series gate resistor (typically 5–22 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 310 pF) and PCB inductance. Without it, ringing can exceed ±20 V gate rating and cause erratic switching or device failure.
Can the IRF1607PBF replace the IRF1404 in an existing motor drive design?
Yes-with caveats: both are 75 V TO-220 N-MOSFETs, but IRF1607PBF has 35% lower RDS(on) (0.0058 Ω vs. 0.0044 Ω) and higher avalanche rating (1250 mJ vs. 750 mJ). Verify gate drive capability handles 210 nC Qg (vs. 190 nC), and confirm heatsink can manage increased power density.
IRF1607PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 320 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 380W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF1607PBF FAQ
1.How can I place an order for IRF1607PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1607PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1607PBF reliable?
The price and inventory of IRF1607PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1607PBF is usually 5 days.
3.What payment methods are accepted for IRF1607PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1607PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1607PBF?
IRF1607PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1607PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1607PBF?
For technical support, including IRF1607PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1607PBF requirements.
6.How does Aetrix verify that IRF1607PBF is sourced from the original manufacturer or authorized distributors?
All IRF1607PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1607PBF meets industry standards.
7.What is the process for return or replacement of IRF1607PBF?
All IRF1607PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1607PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1607PBF part is unused and in its original packaging.
Return procedure for IRF1607PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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