Infineon Technologies IRL8113PBF

Overview

IRL8113PBF from Infineon Technologies is a 30V, 74A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I2PAK) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 4.8 mΩ R_DS(on) at V_GS = 10 V, 23 nC total gate charge, and fully characterized avalanche capability up to 1000 mJ, enabling efficient low-voltage, high-current switching in server VRMs.

For engineers reviewing the IRL8113PBF datasheet, IRL8113PBF pinout, IRL8113PBF application, or IRL8113PBF equivalent, key selection criteria include its 4.5V logic-level gate drive compatibility, body diode reverse recovery charge (Q_rr = 7.2–11 nC), thermal resistance (R_θJC = 1.32 °C/W), and SOA-limited pulsed current handling (I_DM = 420 A).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) and negative temperature coefficient (–5 mV/°C) support stable parallel operation under thermal stress.

The device integrates a fast, low-V_SD (≤1.0 V) intrinsic body diode with t_rr = 18–27 ns and Q_rr = 7.2–11 nC, critical for minimizing shoot-through losses in synchronous rectification. Its C_iss/C_oss/C_rss values (2840/620/290 pF at V_DS = 15 V) are tuned for minimal Miller-induced turn-on risk in high-dV/dt node applications.

Key Specifications

Pinout & Package

IRL8113PBF uses the TO-262 (I2PAK) package: 3-pin, through-hole, isolated tab, standard footprint compatible with TO-220 heatsink mounts. The drain-connected tab enables low-inductance thermal and electrical connection to PCB ground plane or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL8113PBF, the IRL8114PBF offers lower conduction loss but demands stronger gate drive and lacks TO-262 thermal advantages, while the STP80NF55-08 introduces significant timing and drive compatibility constraints in modern high-frequency VRMs.

Availability

IRL8113PBF is available at Aetrix Electronics and suitable for server VRM core power stages, GPU voltage regulator modules, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IRL8113PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL8113PBF belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate drive voltage and robust avalanche performance are mandatory.

FAQ

Is IRL8113PBF suitable for use as a high-side switch in a synchronous buck converter?

No - IRL8113PBF is an N-channel MOSFET requiring gate voltage above source potential for enhancement. In high-side configuration, it needs a bootstrap or isolated gate driver to achieve V_GS ≥ 10 V. Its design intent and SOA curves are optimized for low-side synchronous rectification, not high-side switching.

What is the maximum recommended PCB copper area for thermal relief on the drain tab of IRL8113PBF?

For optimal thermal performance, Infineon recommends ≥400 mm² of 2 oz (70 µm) copper connected directly to the drain tab via multiple thermal vias (≥6 × 0.3 mm diameter) to an internal ground plane. This achieves effective R_θJA ≈ 40 °C/W in typical 4-layer PCB layouts per datasheet Figure 8.

Does IRL8113PBF have integrated ESD protection on the gate terminal?

No - IRL8113PBF has no built-in gate ESD protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and exposure to static discharge exceeding ±1 kV HBM can cause latent damage. External gate resistors (10–47 Ω) and TVS clamping are required in production assembly and handling.

Can IRL8113PBF be paralleled with identical units for higher current capacity?

Yes - its negative R_DS(on) temperature coefficient (–0.5%/°C) and matched V_GS(th) distribution (1.35–2.25 V) enable stable current sharing. Use Kelvin source connections, matched gate trace lengths, and individual 5–10 Ω gate resistors to suppress oscillation and ensure simultaneous turn-on across parallel devices.