Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL1404PBF

Part No.:
IRL1404PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL1404PBF.pdf
Description:
MOSFET N-CH 40V 160A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL1404PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 160 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 4.0 mΩ RDS(on) at VGS = 10 V, 140 nC total gate charge, and full avalanche rating-designed for high-current DC-DC converters, motor drives, and industrial power switching where low conduction loss and robust unclamped inductive switching are critical.

For engineers reviewing the IRL1404PBF datasheet, IRL1404PBF pinout, IRL1404PBF application, or IRL1404PBF equivalent, key selection criteria include its 4.0 mΩ on-resistance at 10 V gate drive, 640 A pulsed drain current capability, 620 mJ single-pulse avalanche energy, TO-220AB thermal resistance (RθJC = 0.75 °C/W), and body diode recovery time (trr = 63–94 ns).

Technical Context

This HEXFET® Seventh Generation device uses advanced silicon processing to minimize RDS(on) per die area while maintaining ruggedness against repetitive and single-pulse avalanche stress. Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive compatibility with 4.3 V and higher controllers.

The MOSFET integrates a fast, low-VSD (1.3 V @ 95 A) intrinsic body diode with controlled reverse recovery (Qrr = 170–250 nC, trr = 63–94 ns), supporting synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 12–24 V systems.
RDS(on)4.0 mΩ @ VGS = 10 V - Enables ≤6.4 W conduction loss at 40 A continuous, reducing heatsink requirements.
ID (25°C)160 A - Continuous drain current rating at case temperature 25°C; derates linearly above 25°C (1.3 W/°C).
EAS620 mJ - Single-pulse avalanche energy capacity; supports reliable operation under unclamped inductive turn-off transients.
Qg140 nC - Total gate charge determines driver strength requirement; ~1.4 A peak needed for 100 ns switching at 10 V swing.
trr63–94 ns - Body diode reverse recovery time; impacts switching loss and EMI in hard-commutated circuits.
RθJC0.75 °C/W - Junction-to-case thermal resistance; allows ~150°C junction rise at 200 W dissipation with ideal heatsinking.

Pinout & Package

IRL1404PBF is housed in a TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount capability (10 lbf·in torque). The package provides low thermal resistance and mechanical robustness for industrial power modules and board-mounted regulators.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heat sink interfaceElectrically connected to metal tab; must be electrically isolated from chassis unless system design permits common-drain configuration.
SourceReference node for gate control / return path for load currentLow-inductance source connection critical for minimizing shoot-through risk and gate oscillation during high-di/dt switching.
GateControl terminal for channel modulationHigh-impedance input requiring <200 nA leakage handling; sensitive to ESD and requires gate resistor (typically 2.5 Ω) for damping.

Key Features

FeatureDesign Value
Ultra-low RDS(on)4.0 mΩ at 10 V gate drive reduces conduction losses by >30% vs. prior-generation 40 V MOSFETs in 48 V input DC-DC stages.
Full avalanche ratingRated for 620 mJ single-pulse and 20 mJ repetitive avalanche energy-enables elimination of snubbers in relay drivers and solenoid controls.
Logic-level gate driveVGS(th) = 1.0–3.0 V ensures reliable turn-on with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Fast body diodetrr = 63–94 ns and Qrr = 170–250 nC support efficient freewheeling in half-bridge motor drives without external Schottky supplementation.

Applications

DC-DC Converter Primary SwitchBrushed DC Motor H-Bridge High-Side

Use Scenario: 12–24 V input, 300 kHz synchronous buck converter delivering up to 80 A to FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Main high-side switching element handling continuous 160 A peak currents with minimal RDS(on)-dominated loss.

Use Value: 4.0 mΩ on-resistance limits conduction loss to <10 W at 80 A, enabling compact heatsink design and >95% efficiency at full load.

Use Scenario: 24 V brushed motor drive with PWM frequency up to 20 kHz, requiring bidirectional current control and regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; conducts forward current and blocks reverse flyback during active braking.

Use Value: 640 A pulsed drain rating and 620 mJ avalanche energy tolerate motor inductance kickback without clamping components.

Industrial Power Supply OR-ing FETHot-Swap Controller Back-End Switch

Use Scenario: Redundant 48 V telecom power shelf using N+1 architecture with automatic load sharing between parallel PSUs.

IC Role / Device Role / Timing Role: Low-loss OR-ing switch placed between PSU output and common bus; conducts only when upstream voltage exceeds bus voltage.

Use Value: 1.3 V body diode forward drop and 4.0 mΩ RDS(on) reduce insertion loss to <0.5% at 100 A, improving system efficiency over discrete diode solutions.

Use Scenario: 12 V hot-swap module protecting backplane from inrush and short-circuit faults during card insertion.

IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap IC; ramps gate voltage to limit inrush dv/dt and withstand 100 A fault currents.

Use Value: 175°C max junction temperature and 0.75 °C/W RθJC allow sustained 100 A operation with active thermal monitoring and foldback protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404PBFRDS(on) = 4.7 mΩ (higher), Qg = 131 nC (lower), same TO-220AB packageSlightly lower switching loss but higher conduction loss; less suitable for high-current continuous dutySelect when gate drive strength is limited and peak current <120 A.
STP160NF04ZRDS(on) = 3.8 mΩ, Qg = 150 nC, same VDSS, different pinout (TO-220FP variant)Lower on-resistance improves efficiency at high load; higher Qg increases driver demandPrefer for new designs targeting <3.8 mΩ RDS(on) where gate drive can support 150 nC.

Compared with IRL1404PBF, IRF1404PBF trades 0.7 mΩ higher on-resistance for 9 nC lower gate charge-favoring drive-limited systems-while STP160NF04Z offers marginally better conduction efficiency at the cost of increased gate drive burden and non-drop-in pinout.

Availability

IRL1404PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and hot-swap power modules requiring stable component supply across extended production lifecycles.

Supply support for IRL1404PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and qualify legacy HEXFET® products for industrial applications with full documentation and long-term support.

The IRL1404PBF belongs to the Seventh Generation HEXFET® power MOSFET family, engineered specifically for high-efficiency, high-reliability power conversion in commercial and industrial equipment operating up to 175°C junction temperature.

FAQ

Is IRL1404PBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed turn-on at VGS = 4.3 V (ID = 40 A), the IRL1404PBF achieves usable RDS(on) with 3.3 V logic outputs when paired with appropriate gate resistors and layout practices to minimize Miller-induced shoot-through.

What is the maximum recommended continuous current at 100°C case temperature?

At TC = 100°C, the continuous drain current is rated at 110 A per the Absolute Maximum Ratings table. This reflects thermal derating from the 160 A rating at 25°C, based on the device's 1.3 W/°C linear derating factor and 200 W maximum power dissipation limit.

Does IRL1404PBF have a built-in ESD protection diode on the gate?

No. The IRL1404PBF does not integrate gate ESD protection; its gate oxide is rated for ±20 V absolute maximum VGS. External gate protection (e.g., 12 V Zener clamp to source) is required in environments with handling or system-level ESD exposure.

Can IRL1404PBF replace IRF1404PBF in an existing PCB layout?

Yes-both share identical TO-220AB package dimensions, pinout (D-S-G), and mounting hole pattern. However, the IRL1404PBF's lower RDS(on) (4.0 vs. 4.7 mΩ) and higher Qg (140 vs. 131 nC) may require verification of gate drive capability and thermal margin in high-frequency, high-duty-cycle applications.

IRL1404PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.3V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6590 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL1404PBF FAQ

1.How can I place an order for IRL1404PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1404PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1404PBF reliable?

The price and inventory of IRL1404PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404PBF is usually 5 days.

3.What payment methods are accepted for IRL1404PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1404PBF?

IRL1404PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1404PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1404PBF?

For technical support, including IRL1404PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404PBF requirements.

6.How does Aetrix verify that IRL1404PBF is sourced from the original manufacturer or authorized distributors?

All IRL1404PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404PBF meets industry standards.

7.What is the process for return or replacement of IRL1404PBF?

All IRL1404PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1404PBF part is unused and in its original packaging.

Return procedure for IRL1404PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL1404PBF Tags

  • IRL1404PBF
  • IRL1404PBF PDF
  • IRL1404PBF Datasheet
  • IRL1404PBF Specifications
  • IRL1404PBF Images
  • Infineon Technologies
  • Infineon Technologies IRL1404PBF
  • Buy IRL1404PBF
  • IRL1404PBF Price
  • IRL1404PBF Distributor
  • IRL1404PBF Supplier
  • IRL1404PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER