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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB42N20DPBF

Name: IRFB42N20DPBF
Brand: Infineon Technologies
SKU: IRFB42N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB42N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB42N20DPBF.pdf

Description:: MOSFET N-CH 200V 44A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB42N20DPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 44A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency switching in SMPS, motor control, and UPS systems. It features R_DS(on) = 0.055Ω @ V_GS = 10V, Q_g = 91 nC (typ), and fully characterized C_oss(eff) = 400 pF for simplified hard-switching design.

For engineers reviewing the IRFB42N20DPBF datasheet, IRFB42N20DPBF pinout, IRFB42N20DPBF application, or IRFB42N20DPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 510 mJ), diode reverse recovery (t_rr = 220 ns), thermal resistance (R_θJC = 0.45°C/W), and gate charge profile for ZVS/ZCS topology compatibility.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 5.0 Ω·nC. Its body diode exhibits soft recovery (Q_rr = 1860 nC, t_rr = 220 ns) and low forward voltage (V_SD = 1.3 V @ I_S = 26A), enabling efficient synchronous rectification and unclamped inductive switching.

The device supports operation up to T_J = +175°C with guaranteed avalanche capability (I_AR = 26 A, E_AR = 33 mJ), and its C_iss/C_oss/C_rss are fully characterized across V_DS range (0–160 V) per AN-1001, enabling accurate snubber and gate drive loss calculation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; suitable for 170 VAC input rectified rails with margin.
R_DS(on) max	0.055 Ω @ V_GS = 10 V, I_D = 26 A - Enables <1.5 W conduction loss at 44 A continuous drain current.
Q_g	91 nC (typ) - Determines gate driver current requirement (e.g., 1.8 A peak for 50 ns turn-on with 1.8 Ω R_G).
E_AS	510 mJ - Single-pulse avalanche energy rating supports robustness against inductive load transients.
C_oss(eff)	400 pF - Effective output capacitance used for calculating turn-off loss and resonant timing in LLC converters.
t_rr	220 ns (typ) - Body diode reverse recovery time directly impacts cross-conduction loss in half-bridge topologies.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance enables 330 W power dissipation at 25°C case temperature.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin configuration, and lead-free finish (Pb-free per JEDEC J-STD-020). Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	High-impedance input requiring 10 V threshold; Miller charge (Q_gd = 43 nC typ) dominates switching transitions.
2 – DRAIN	Main power terminal (connected to tab)	High-voltage drain node; electrically tied to heatsink-requires isolation when mounted to grounded chassis.
3 – SOURCE	Power return and reference	Source node defines local ground for gate drive; carries full load current and body diode reverse recovery charge.
4 – DRAIN	Secondary drain connection	Redundant drain terminal for enhanced current handling and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	43 nC typ - Reduces Miller-induced turn-off delay and improves controllability in high-dV/dt environments.
Fully characterized effective output capacitance (C_oss(eff))	400 pF - Enables precise dead-time optimization and zero-voltage switching (ZVS) design in resonant converters.
Soft-recovery body diode	t_rr = 220 ns, Q_rr = 1860 nC - Minimizes voltage overshoot and EMI during freewheeling in bridge configurations.
Avalanche-rated operation	E_AS = 510 mJ - Eliminates need for external clamping in inductive load switching without derating.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 300–500 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 VDC bus, conducting 30–40 A RMS with fast turn-off to minimize overlap loss.

Use Value: Low Q_g and C_oss(eff) reduce gate drive loss and enable ZVS over wide load range, improving efficiency by ≥0.5% at full load.

Use Scenario: 3-phase inverter driving 5–10 kW PMSM/BLDC motor in CNC or packaging machinery with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge, commutating 26 A peak current with 100 A/µs di/dt capability.

Use Value: Soft-recovery body diode prevents shoot-through during PWM dead-time and reduces snubber stress, extending system reliability.

UPS Inverter Stage

High-Frequency DC-DC Converter

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output with battery backup; inverter stage operates at 16–20 kHz.

IC Role / Device Role / Timing Role: Full-bridge inverter switch sustaining 200 VDC bus and delivering 20–30 A RMS to transformer primary.

Use Value: 175°C junction rating and 330 W power dissipation allow compact heatsinking in space-constrained rack-mount enclosures.

Use Scenario: 48 V–12 V isolated DC-DC module for telecom/datacom equipment, using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch operating at 200–300 kHz with tight duty-cycle control.

Use Value: Low R_DS(on) (0.055 Ω) minimizes conduction loss at high current density, supporting >95% conversion efficiency at 50 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 0.06 Ω (higher), Q_g = 105 nC (higher), no published C_oss(eff)	Limited to ≤200 kHz due to higher switching loss; lower avalanche rating (E_AS = 320 mJ)	Acceptable for cost-sensitive 100–150 kHz SMPS where thermal margin exists.
IXTH30N20L	R_DS(on) = 0.045 Ω (lower), Q_g = 120 nC (higher), TO-247 package (larger footprint)	Better conduction loss but requires larger PCB area and higher gate drive power; higher C_iss delays switching speed.	Preferred for ultra-high-efficiency designs where board space permits and gate drive capability supports 120 nC.

Compared with STP20NM20 and IXTH30N20L, IRFB42N20DPBF delivers optimal balance of low Q_g, characterized C_oss(eff), and TO-220AB thermal performance-making it ideal for space-constrained, high-frequency industrial SMPS where predictable switching behavior is critical.

Availability

IRFB42N20DPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, uninterruptible power supplies, and industrial motor control systems requiring stable component supply and long-term industrial qualification.

Supply support for IRFB42N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial-grade power conversion systems operating up to 175°C junction temperature.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB42N20DPBF supports 31 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated with actual heatsink thermal resistance and ambient conditions.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has V_SD = 1.3 V at I_S = 26 A and soft recovery (t_rr = 220 ns, Q_rr = 1860 nC), making it viable for synchronous rectification in medium-frequency DC-DC converters. However, external Schottky diodes remain preferred for <100 kHz applications demanding lowest forward drop.

Does this part have lead-free and RoHS-compliant construction?

Yes-IRFB42N20DPBF is lead-free (Pb-free) and RoHS-compliant, as indicated by the "PbF" suffix and confirmed in the package outline notes. Soldering temperature is rated for 300°C for 10 seconds at 1.6 mm from case, meeting JEDEC J-STD-020 reflow profiles.

Can this MOSFET replace IRFP4229 in existing designs?

No-IRFP4229 is a 250 V, 42 A device with different R_DS(on) (0.052 Ω), Q_g (110 nC), and thermal characteristics. While both are TO-247, IRFB42N20DPBF uses TO-220AB and lacks the same avalanche ruggedness (E_AS = 510 mJ vs. 620 mJ). Direct replacement requires layout and thermal redesign.

IRFB42N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB42N20DPBF FAQ

1.How can I place an order for IRFB42N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB42N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB42N20DPBF reliable?

The price and inventory of IRFB42N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB42N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFB42N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB42N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB42N20DPBF?

IRFB42N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB42N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB42N20DPBF?

For technical support, including IRFB42N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB42N20DPBF requirements.

6.How does Aetrix verify that IRFB42N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFB42N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB42N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFB42N20DPBF?

All IRFB42N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB42N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB42N20DPBF part is unused and in its original packaging.

Return procedure for IRFB42N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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