Infineon Technologies IRFL014NPBF

Overview

IRFL014NPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 1.9A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.16Ω R_DS(on) at V_GS = 10V, 1.0W power dissipation on FR-4 PCB, and full avalanche rating-designed for low-voltage DC-DC conversion, LED drivers, and load switching in space-constrained industrial controls.

For engineers reviewing the IRFL014NPBF datasheet, IRFL014NPBF pinout, IRFL014NPBF application, or IRFL014NPBF equivalent, key selection criteria include its SOT-223 thermal performance (R_θJA = 90°C/W on FR-4), fast switching (t_r = 7.1ns), body diode recovery (t_rr = 41ns), and ±20V gate voltage tolerance-critical for robust gate drive design and unclamped inductive load handling.

Technical Context

This HEXFET® Fifth Generation device uses advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness against repetitive avalanche stress (E_AS = 48mJ). Its transconductance (g_fs = 1.6S) and gate charge profile (Q_g = 7.0nC typ.) support efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.0V at I_S = 1.7A and t_rr = 41ns with 100A/µs di/dt, enabling synchronous rectification and flyback snubbing without external diodes. Thermal design leverages the SOT-223's exposed drain tab for direct PCB heatsinking-achieving 2.1W dissipation on 1-inch² copper.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain tab (Pin 2) for thermal conduction to PCB copper; surface-mount compatible with vapor-phase, infrared, or wave soldering. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Source (dual-source configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN2016LFG-7 and IPB111N20NFD, the IRFL014NPBF uniquely balances 55V blocking, SOT-223 mountability, and 0.16Ω on-resistance-making it optimal for 12–24V industrial control nodes where board area, thermal management, and inductive ruggedness are co-constrained.

Availability

IRFL014NPBF is available at Aetrix Electronics and suitable for LED drivers, DC-DC converters, and industrial load switches requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRFL014NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive and industrial qualification.

The HEXFET® product line delivers optimized silicon processes for discrete power MOSFETs targeting high-efficiency, high-reliability switching in constrained thermal environments-especially where avalanche robustness and surface-mount thermal performance are essential.

FAQ

Is IRFL014NPBF suitable for logic-level gate drive?

No-it requires ≥4.5V V_GS(th) (max 4.0V) and is optimized for 10V gate drive to achieve rated R_DS(on). At 3.3V or 5V, R_DS(on) rises significantly (>1Ω), increasing conduction loss. Use logic-level alternatives like DMN2016LFG-7 only if gate voltage is limited.

What is the maximum PCB copper area needed to achieve 2.1W power dissipation?

To reach the 2.1W rating, the datasheet specifies a 1-inch square (25.4mm × 25.4mm) copper pad on the primary side, connected directly to the SOT-223 drain tab. Thermal vias to inner-layer ground planes further improve heat spreading but are not required for baseline 2.1W operation.

Can IRFL014NPBF replace IRFL014 in existing designs?

Yes-IRFL014NPBF is the lead-free (PbF) version of IRFL014, with identical electrical specs, pinout, and thermal behavior. The "PbF" suffix indicates RoHS-compliant packaging; no layout or drive circuit changes are needed for drop-in replacement in new production.

Does the body diode support continuous bidirectional current in half-bridge configurations?

No-the body diode is rated for pulsed source current (I_SM = 1.7A) and reverse recovery (t_rr = 41ns), but not continuous bidirectional conduction. In half-bridge operation, it serves only for freewheeling during dead time; sustained reverse current requires external diode or synchronous FET pairing.