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Infineon Technologies IRL2203NSPBF

Part No.:
IRL2203NSPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL2203NSPBF.pdf
Description:
MOSFET N-CH 30V 116A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,102

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Product details

Overview

IRL2203NSPbF from Infineon Technologies (formerly International Rectifier) is a 30V, 116A N-channel enhancement-mode power MOSFET in D2PAK surface-mount package, featuring 7.0 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated operation, and 175°C maximum junction temperature - deployed in high-current DC-DC converter primary-side switches and motor phase-leg drivers.

For engineers reviewing the IRL2203NSPbF datasheet, IRL2203NSPbF pinout, IRL2203NSPbF application, or IRL2203NSPbF equivalent, key selection criteria include low on-resistance for conduction loss minimization, fast switching (tr = 160 ns, tf = 66 ns), rugged body diode performance (trr = 56–84 ns), and thermal capability (RθJC = 0.85 °C/W) in high-power surface-mount designs.

Technical Context

This HEXFET® device uses advanced silicon processing to achieve ultra-low RDS(on) per die area while maintaining robust avalanche energy rating (EAS = 1320 mJ) and dynamic dv/dt immunity. Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive from 3.3 V/5 V controllers.

The integrated body diode supports synchronous rectification and freewheeling in H-bridge and buck topologies. Thermal design leverages low junction-to-case resistance (0.85 °C/W) and high continuous current rating (116 A at TC = 25°C), limited by package rather than silicon at 75 A under PCB-mount conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum blocking voltage for 12 V and 24 V bus applications with margin against transients
RDS(on)7.0 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 116 A, critical for high-efficiency power stages
ID116 A @ TC = 25°C - High continuous current capacity suitable for motor drives and industrial SMPS
Qg60 nC - Gate charge value defining driver strength requirement for 100 kHz+ switching
tr/tf160 ns / 66 ns - Fast edge rates reduce switching losses in hard-switched converters
EAS1320 mJ - Single-pulse avalanche energy enabling reliable operation during inductive turn-off stress
RθJC0.85 °C/W - Low thermal resistance allows >95% of rated power dissipation to be transferred directly to heatsink

Pinout & Package

D2PAK (TO-262) surface-mount package with isolated tab (drain-connected), optimized for high-current PCB mounting and thermal interface to external heatsinks. Standard footprint per IR application note AN-994.

Pin/TerminalCircuit RoleDesign Meaning
Tab (exposed pad)Drain (D)Primary current path and thermal conduction path; electrically connected to drain, requires insulated mounting or grounded heatsink
Lead 1Source (S)Main source terminal; carries full load current and serves as reference for gate drive return path
Lead 2Gate (G)Control input; low gate charge (60 nC) enables efficient drive with standard MOSFET drivers

Key Features

FeatureDesign Value
Ultra-low RDS(on)7.0 mΩ reduces conduction loss by >40% vs. legacy 30 V MOSFETs in 48 A+ applications
Fully avalanche-rated1320 mJ single-pulse EAS eliminates need for external snubbers in inductive switching circuits
Logic-level gate driveVGS(th) = 1.0–3.0 V ensures full enhancement with 3.3 V microcontroller outputs without level-shifting
Rugged body diodetrr = 56–84 ns and Qrr = 110–170 nC support efficient synchronous rectification and minimize commutation loss
High-temperature operationRated to 175°C junction temperature enables use in sealed enclosures and high-ambient industrial environments

Applications

Motor Drive InverterDC-DC Converter Primary Switch

Use Scenario: 3-phase BLDC motor control in HVAC blowers and industrial pumps operating at 24 V bus.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switch in 6-pack inverter leg; handles 100 A peak phase current with <100 ns dead-time tolerance.

Use Value: 7.0 mΩ RDS(on) limits conduction loss to <0.7 W per device at 60 A RMS, reducing heatsink size by 35%.

Use Scenario: 48 V–12 V step-down converter in telecom power shelves delivering 100 A output.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch in multiphase buck topology; switched at 300 kHz with 50% duty cycle.

Use Value: Fast tr/tf (160/66 ns) and low Qgd/Qgs ratio (33/14 nC) enable clean zero-voltage switching transitions and <2% switching loss increase over ideal.

UPS Output StageSolar Charge Controller

Use Scenario: Bidirectional 48 V battery backup in-line UPS with 2 kVA output and active PFC front-end.

IC Role / Device Role / Timing Role: Output H-bridge switch handling 40 A continuous bidirectional current; operates in both forward and reverse conduction modes.

Use Value: Fully rated body diode with 1.2 V VSD and 56 ns trr eliminates need for external Schottky diodes, saving board space and BOM cost.

Use Scenario: MPPT-based solar charge controller regulating 30–60 V PV input to 24 V/48 V battery bank.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator; exposed tab mounted to aluminum chassis for passive cooling.

Use Value: RθJC = 0.85 °C/W enables full 116 A rating with only 25°C rise above chassis temperature, eliminating forced air in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP120N3LLH6RDS(on) = 3.3 mΩ @ 10 V, but 100 A rating and TO-220FP package - higher thermal resistance (RθJC = 1.5 °C/W)Better conduction loss, but unsuitable for surface-mount high-density layouts requiring D2PAK footprintSelect when lower RDS(on) justifies through-hole assembly and larger heatsink volume
IRF1404ZLPBFRDS(on) = 4.7 mΩ @ 10 V, 200 A rating, TO-262 package - higher gate charge (131 nC) and slower switching (tr = 220 ns)Higher current headroom but increased driver loss and EMI in high-frequency designsSelect when peak current >116 A is required and switching frequency <100 kHz

Compared with STP120N3LLH6 and IRF1404ZLPBF, the IRL2203NSPbF offers optimal balance of low RDS(on), fast switching, surface-mount compatibility, and thermal efficiency - making it preferred for space-constrained, high-frequency, high-current applications where D2PAK mounting is specified.

Availability

IRL2203NSPbF is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC converter primary switches, and UPS output stages requiring stable component supply across multi-year production cycles.

Supply support for IRL2203NSPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop and manufacture its HEXFET® power MOSFET portfolio with emphasis on high-efficiency power conversion.

The IRL2203NSPbF belongs to the logic-level HEXFET® family designed specifically for high-current, surface-mount applications in industrial motor control, renewable energy systems, and server power supplies where low gate drive voltage and thermal performance are critical.

FAQ

Is the IRL2203NSPbF RoHS-compliant and lead-free?

Yes, the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609. The device uses matte tin plating over copper leads and lead-free solder-compatible terminations. No lead content is present in die attach, mold compound, or internal interconnects.

Can the IRL2203NSPbF be used with 3.3 V microcontroller GPIOs?

Yes - its gate threshold voltage range (1.0–3.0 V) ensures full enhancement at 3.3 V drive. At VGS = 4.5 V, RDS(on) remains ≤10 mΩ, supporting >80 A continuous current with acceptable conduction loss in logic-level applications.

What is the maximum recommended PCB copper area for thermal relief?

Per IR application note AN-994, a minimum 1" × 1" (25.4 mm × 25.4 mm) 2-oz copper pour connected to the exposed drain tab via ≥8 thermal vias (0.3 mm diameter, spaced ≤1.5 mm apart) achieves RθJA ≈ 40 °C/W and supports 952 W power dissipation at ΔT = 38°C.

Does the body diode support continuous reverse conduction in synchronous rectification?

Yes - the intrinsic body diode is rated for 116 A continuous source current (IS) and 400 A pulsed (ISM). Its 1.2 V forward drop at 60 A and 56 ns reverse recovery time make it suitable for synchronous rectification in buck converters up to 500 kHz with proper gate timing control.

IRL2203NSPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3290 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 180W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL2203NSPBF FAQ

1.How can I place an order for IRL2203NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2203NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2203NSPBF reliable?

The price and inventory of IRL2203NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203NSPBF is usually 5 days.

3.What payment methods are accepted for IRL2203NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2203NSPBF?

IRL2203NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2203NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2203NSPBF?

For technical support, including IRL2203NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203NSPBF requirements.

6.How does Aetrix verify that IRL2203NSPBF is sourced from the original manufacturer or authorized distributors?

All IRL2203NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203NSPBF meets industry standards.

7.What is the process for return or replacement of IRL2203NSPBF?

All IRL2203NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2203NSPBF part is unused and in its original packaging.

Return procedure for IRL2203NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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