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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR13N20DPBF

Name: IRFR13N20DPBF
Brand: Infineon Technologies
SKU: IRFR13N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR13N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR13N20DPBF.pdf

Description:: MOSFET N-CH 200V 13A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR13N20DPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 13 A N-channel enhancement-mode MOSFET in DPAK (TO-252) package, with R_DS(on) = 0.22 Ω at V_GS = 10 V and Q_g = 24 nC, designed for high-efficiency switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits.

For engineers reviewing the IRFR13N20DPBF datasheet, IRFR13N20DPBF pinout, IRFR13N20DPBF application, or IRFR13N20DPBF equivalent, key selection criteria include breakdown voltage margin, gate charge for PWM switching loss, thermal resistance in surface-mount layout, and lead-free compliance for RoHS-constrained production.

Technical Context

This MOSFET uses planar stripe silicon technology with optimized cell pitch to balance conduction and switching losses. Its 200 V V_DSS rating supports 170 V DC bus operation with 15% safety margin, and the 13 A I_D rating is specified at T_C = 100 °C with pulse testing per JEDEC JESD24-1.

The device features a built-in fast-recovery body diode (t_rr = 55 ns, Q_rr = 38 nC), enabling synchronous rectification and freewheeling in buck and flyback topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - supports 170 V nominal DC input with 15% margin for surge and ripple
I_D @ T_C=100°C	13 A - continuous drain current rating under heatsink-limited thermal conditions
R_DS(on) @ V_GS=10 V	0.22 Ω - determines conduction loss of 39 W at 13 A (I²R), critical for thermal design
Q_g	24 nC - defines gate drive energy requirement and switching speed in 100–500 kHz SMPS
t_rr / Q_rr	55 ns / 38 nC - enables zero-voltage switching (ZVS) assist and reduces diode recovery loss
R_θJC	2.5 °C/W - junction-to-case thermal resistance used to calculate heatsink size for 100 °C case temp

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≥10 V drive for full enhancement and low R_DS(on)
D	Drain terminal	High-side switching node; electrically connected to exposed metal pad for thermal and electrical path
S	Source terminal	Reference node for gate drive; ties to power ground or low-side switch source in half-bridge

Key Features

Feature	Design Value
Lead-free and RoHS-compliant	Meets IPC-J-STD-609A Class 1 definition; "P" suffix confirms Pb-free plating and assembly
Fast body diode	55 ns reverse recovery time enables use in discontinuous conduction mode (DCM) flyback without snubber
Low gate charge	24 nC Q_g reduces driver IC power dissipation and allows smaller gate resistors for faster turn-on
Enhancement-mode operation	Zero conduction at V_GS = 0 V ensures fail-safe off-state during power-up or controller fault

Applications

AC-DC Adapter

Industrial DC-DC Converter

Use Scenario: 65 W universal-input offline adapter with active clamp flyback topology.

IC Role / Device Role: Primary-side high-side switch handling 200 V DC link and 13 A peak current.

Use Value: 0.22 Ω R_DS(on) limits conduction loss to <1.5 W at full load, improving efficiency to >88%.

Use Scenario: 48 V to 12 V isolated DC-DC module for PLC I/O power rails.

IC Role / Device Role: Secondary-side synchronous rectifier in forward converter with 200 kHz switching.

Use Value: Fast body diode (55 ns t_rr) eliminates need for external Schottky, reducing BOM count and footprint.

Motor Drive Half-Bridge

LED Driver Power Stage

Use Scenario: 24 V brushed DC motor controller with H-bridge using discrete MOSFETs.

IC Role / Device Role: Low-side switch in half-bridge leg, switching at 20 kHz PWM with 13 A stall current.

Use Value: 24 nC Q_g enables clean 100 ns rise/fall times using TC4427 driver, minimizing shoot-through risk.

Use Scenario: Constant-current LED driver for architectural lighting with 36 V string voltage.

IC Role / Device Role: High-side switch in buck regulator controlling 1.5 A LED current.

Use Value: 200 V V_DSS accommodates 36 V string + 100 V transient spikes without clamping circuit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF20	V_DSS = 200 V, R_DS(on) = 0.25 Ω, Q_g = 28 nC - higher conduction and switching loss	Same SMPS use but requires larger heatsink and slower PWM edge rates	Prefer when STMicroelectronics supply chain alignment is required and 0.03 Ω R_DS(on) penalty is acceptable
IXTP13N20P	V_DSS = 200 V, R_DS(on) = 0.24 Ω, Q_g = 22 nC - slightly lower gate charge but higher on-resistance	Better suited for high-frequency resonant converters where Q_g dominates loss	Select when operating >300 kHz and gate drive capability is constrained

Compared with STP14NF20 and IXTP13N20P, IRFR13N20DPBF delivers the lowest combined conduction-switching loss at 100–200 kHz, making it optimal for thermally constrained SMPS designs requiring minimal heatsinking.

Availability

IRFR13N20DPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR13N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its high-voltage power MOSFET product lines with full backward compatibility and extended lifecycle support.

This device belongs to the HEXFET® family, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in industrial and consumer power supplies.

FAQ

What is the maximum pulsed drain current (I_DM) for IRFR13N20DPBF?

The absolute maximum pulsed drain current is 52 A, tested per JEDEC JESD24-1 with pulse width ≤300 µs and duty cycle ≤2%. This rating applies only under strict thermal boundary conditions-actual design limit depends on PCB copper area, ambient temperature, and switching frequency.

Does IRFR13N20DPBF require a gate resistor for EMI suppression?

Yes-a 10–22 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. The 24 nC gate charge and low output capacitance (C_oss = 320 pF) make it susceptible to oscillation above 10 MHz without proper gate damping.

Can IRFR13N20DPBF be used in linear (analog) regulation mode?

No-it is not characterized or rated for linear operation. Sustained operation in the ohmic region causes localized hot-spot formation due to uneven current distribution across the die, leading to premature failure even below I_D limits.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the drain terminal and must be routed to the high-voltage DC node. It must not contact any grounded copper pour; thermal vias to inner-layer ground planes require isolation slots or clearance gaps per IPC-2221B.

IRFR13N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR13N20DPBF FAQ

1.How can I place an order for IRFR13N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR13N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR13N20DPBF reliable?

The price and inventory of IRFR13N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR13N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFR13N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR13N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR13N20DPBF?

IRFR13N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR13N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR13N20DPBF?

For technical support, including IRFR13N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR13N20DPBF requirements.

6.How does Aetrix verify that IRFR13N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR13N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR13N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFR13N20DPBF?

All IRFR13N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR13N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR13N20DPBF part is unused and in its original packaging.

Return procedure for IRFR13N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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