My Inquiry
My Account
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LFUSCD10065ADIODE SIL CARB 650V 10A TO220AC |
9,504 | 0.00 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 290pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
LFUSCD05120ADIODE SIL CARB 1.2KV 5A TO220AC |
7,017 | 0.00 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
LFUSCD15120ADIODE SIL CARB 1.2KV 15A TO220AC |
4,573 | 0.00 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 375 µA @ 1200 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
LFUSCD20065BDIODE SIL CARB 650V 20A TO247AD |
7,813 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 580pF @ 1V, 1MHz | - | - | Through Hole | TO-247AD | 175°C (Max) |
|
IDC51D120T6MX1SA3DIODE GP 1.2KV 100A WAFER |
7,346 | 0.00 |
|
Datasheet |
- | Die | Bulk | Active | Standard | 1200 V | 100A | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC06D120H8X1SA2DIODE GP 1.2KV 7.5A WAFER |
3,294 | 0.00 |
|
Datasheet |
- | Die | Bulk | Active | Standard | 1200 V | 7.5A | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER |
8,432 | 0.00 |
|
Datasheet |
- | - | Bulk | Active | Standard | 1200 V | 150A | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
|
|
SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER |
6,278 | 0.00 |
|
Datasheet |
- | - | Bulk | Active | Standard | 1200 V | 150A | 2.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
|
|
IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE |
4,094 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 200A | 2.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 360 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 175°C |
|
|
IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED |
7,637 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED |
7,905 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED |
6,613 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED |
7,352 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE |
6,919 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 100A | 2.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 20 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED |
2,541 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE |
5,947 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 5A | 2.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 100 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED |
4,112 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE |
8,722 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 10A | 2.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 200 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED |
5,274 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FR107DIODE GEN PURP 1KV 1A DO41 |
6,202 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Cut Tape (CT) | Obsolete | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
