Vishay General Semiconductor - Diodes Division 1.5KE110AHE3_B/C
- Part No.:
- 1.5KE110AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1.5KE110AHE3_B/C.pdf
- Description:
- 1.5KW,110V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:3,648
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Product details
Overview
1.5KE110AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 105 V to 116 V breakdown voltage (VBR), 94.0 V maximum standoff voltage (VWM), 1500 W peak pulse power (10/1000 µs), 9.9 A peak pulse current (IPPM), and clamps to ≤152 V at rated surge. It is used to protect MOSFETs, ICs, and sensor interfaces against lightning-induced transients and inductive switching spikes in industrial power supplies.
For engineers reviewing the 1.5KE110AHE3_B/C datasheet, 1.5KE110AHE3_B/C pinout, 1.5KE110AHE3_B/C application, or 1.5KE110AHE3_B/C equivalent, this device delivers verified clamping performance, AEC-Q101 qualification (per HE3 suffix), RoHS-compliant matte tin plating, and UL 94 V-0 molded epoxy packaging - critical for automotive-grade ESD and surge resilience in harsh environments.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds its VBR threshold (105–116 V), it avalanches rapidly (<1 ns response) to divert surge current away from downstream circuitry. Its low incremental clamping voltage (ΔVC = VC − VBR) ensures minimal overvoltage stress during 10/1000 µs surges.
Thermally, it supports operation from −55 °C to +175 °C junction temperature, with RθJA = 75 °C/W and RθJL = 15.4 °C/W. The 1.5KE package enables high surge handling (200 A IFSM, 8.3 ms half-sine) while maintaining stable leakage (<1.0 µA at VWM) and low forward voltage (5.0 V @ 100 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 105 V / 116 V - defines precise avalanche initiation window for reliable overvoltage detection |
| VWM | 94.0 V - maximum continuous reverse operating voltage before leakage rises significantly |
| IPPM (10/1000 µs) | 9.9 A - peak surge current it safely clamps without failure under standard lightning waveform |
| VC @ IPPM | ≤152 V - clamped voltage seen by protected circuit during full-rated surge event |
| PPPM | 1500 W - peak transient power dissipation capability, enabling robust protection in 1 ms pulses |
| TJ range | −55 °C to +175 °C - wide operating temperature envelope suitable for under-hood automotive and industrial environments |
| Leakage @ VWM | ≤1.0 µA - negligible standby current draw, preserving system efficiency and battery life |
Pinout & Package
Package: Case Style 1.5KE - axial-leaded, molded epoxy body meeting UL 94 V-0 flammability rating; leads are matte tin plated, solderable per J-STD-002 and JESD 22-B102; cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to ground or low-side reference | Provides low-impedance path to sink surge current during reverse avalanche conduction |
| Cathode | Protected line connection; marked with color band | Connected to the rail or signal line requiring transient suppression; avalanche occurs when voltage exceeds VBR relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures stable, repeatable avalanche characteristics and long-term reliability under repeated surge stress |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units and body electronics requiring extended temperature and lifetime validation |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 surge immunity (4 kV line-to-earth) in properly designed front-end circuits |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, reducing risk of secondary overstress on protected ICs |
| RoHS-compliant, JESD 201 Class 2 whisker resistance | Enables use in lead-free reflow and high-reliability assemblies without tin whisker growth concerns |
Applications
| Industrial Motor Drives | Automotive Power Distribution |
|---|---|
Use Scenario: Protection of gate drivers and MCU inputs against back-EMF spikes from relay or solenoid switching in PLC I/O modules. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed across DC bus or control line to limit transient excursions below 152 V. Use Value: Prevents latch-up or permanent damage to 100 V-rated logic-level MOSFETs and 3.3 V/5 V microcontrollers during 100 A inductive turn-off events. |
Use Scenario: Input rail protection in automotive body control modules exposed to load dump (ISO 7637-2 Pulse 5a) and jump-start surges. IC Role / Device Role / Timing Role: Primary-stage TVS on 12 V supply input, positioned upstream of LDOs and CAN transceivers. Use Value: Clamps 120 V/100 ms load dump transients to ≤152 V, allowing downstream regulators time to respond without shutdown or latch-up. |
| Telecom Power Feeds | Renewable Energy Inverters |
Use Scenario: Surge protection on -48 V DC telecom power feeds subject to lightning-induced common-mode transients on outdoor copper lines. IC Role / Device Role / Timing Role: Unidirectional TVS referenced to chassis ground, guarding rectifier outputs and DC-DC converter inputs. Use Value: Absorbs 1500 W surges with <1 ns response, preventing destructive overvoltage on telecom ASICs rated for ≤60 V absolute maximum. |
Use Scenario: DC-link overvoltage suppression in solar string inverters where PV array transients couple into MPPT controller power rails. IC Role / Device Role / Timing Role: Clamp diode across bulk capacitor bank to limit voltage rise during rapid disconnection or grid fault events. Use Value: Limits DC-link voltage excursion to ≤152 V during 10/1000 µs surges, avoiding overvoltage trip in 200 V-rated IGBT gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A | Lower PPPM (600 W), smaller SMB package (lower IPPM = 5.5 A), same VBR range (105–116 V) | Suitable for space-constrained PCBs with lower-energy transients; not rated for AEC-Q101 | Select when board area is limited and surge threat level is ≤Level 3 (IEC 61000-4-5); verify thermal derating for ambient >75 °C |
| 1.5KE110CA | Bidirectional variant; identical VBR/VC specs but symmetric clamping in both polarities; no cathode marking | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN FD) where polarity reversal may occur | Choose only when protecting bidirectional signals; not interchangeable with 1.5KE110AHE3_B/C due to polarity and marking differences |
Compared with SMBJ110A and 1.5KE110CA, the 1.5KE110AHE3_B/C provides higher surge energy handling (1500 W vs. 600 W) and automotive qualification - making it preferred for high-reliability 12 V/24 V systems where sustained surge exposure and temperature extremes are expected.
Availability
1.5KE110AHE3_B/C is available at Aetrix Electronics and suitable for industrial motor drives, automotive power distribution, telecom power feeds, renewable energy inverters, and ruggedized embedded controllers requiring stable component supply across multi-year production cycles.
Supply support for 1.5KE110AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, MOSFETs, and TVS devices, with emphasis on high-reliability, high-power, and automotive-qualified components.
The 1.5KE series was developed specifically for robust transient suppression in demanding power electronics applications - delivering standardized 1500 W surge capability, AEC-Q101 qualification, and UL 94 V-0 packaging for mission-critical protection.
FAQ
What is the breakdown voltage tolerance for 1.5KE110AHE3_B/C?
The 1.5KE110AHE3_B/C has a specified breakdown voltage (VBR) range of 105 V minimum to 116 V maximum at 1.0 mA test current (IT). This ±5% tolerance ensures consistent clamping behavior across production lots and supports reliable design margining against overvoltage thresholds in protected circuits.
Is 1.5KE110AHE3_B/C suitable for automotive applications?
Yes, the HE3 suffix confirms that 1.5KE110AHE3_B/C is AEC-Q101 qualified and meets automotive reliability requirements. It is rated for operation from −55 °C to +175 °C and qualified for mechanical shock, vibration, and temperature cycling - making it appropriate for engine control, body electronics, and ADAS power rail protection.
What is the clamping voltage of 1.5KE110AHE3_B/C at its rated peak pulse current?
At its rated peak pulse current (IPPM) of 9.9 A (10/1000 µs waveform), the 1.5KE110AHE3_B/C clamps to a maximum of 152 V. This value represents the upper limit of voltage imposed on the protected circuit during full-rated surge events and is critical for ensuring downstream components remain within their absolute maximum ratings.
Does 1.5KE110AHE3_B/C have RoHS and lead-free compliance?
Yes, the "E3" in 1.5KE110AHE3_B/C denotes RoHS-compliant construction with matte tin-plated leads. It satisfies JEDEC JESD201 Class 2 whisker resistance and is compatible with lead-free reflow soldering processes up to 260 °C peak temperature.
How does the thermal resistance of 1.5KE110AHE3_B/C affect its power derating?
With a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W, the 1.5KE110AHE3_B/C requires significant derating above 25 °C ambient. For example, at 75 °C ambient, its steady-state power dissipation must be reduced to ~3.25 W (50% of 6.5 W rating) - though its 1500 W surge rating remains valid for short-duration transients per Fig. 2 in the datasheet.
1.5KE110AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1.5KE110AHE3_B/C FAQ
1.How can I place an order for 1.5KE110AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1.5KE110AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1.5KE110AHE3_B/C reliable?
The price and inventory of 1.5KE110AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5KE110AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1.5KE110AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5KE110AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1.5KE110AHE3_B/C?
1.5KE110AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1.5KE110AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1.5KE110AHE3_B/C?
For technical support, including 1.5KE110AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5KE110AHE3_B/C requirements.
6.How does Aetrix verify that 1.5KE110AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1.5KE110AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5KE110AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1.5KE110AHE3_B/C?
All 1.5KE110AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1.5KE110AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1.5KE110AHE3_B/C part is unused and in its original packaging.
Return procedure for 1.5KE110AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1.5KE110AHE3_B/C Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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