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Vishay General Semiconductor - Diodes Division 1.5KE200AHE3_B/C
- Part No.:
- 1.5KE200AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1.5KE200AHE3_B/C.pdf
- Description:
- 1.5KW,200V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,462
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Product details
Overview
1.5KE200AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in DC power rails and signal lines. It features a 200 V breakdown voltage (VBR = 190–210 V at 1 mA), 171 V maximum working voltage (VWM), 274 V clamping voltage (VC) at 5.5 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature - deployed in automotive power supply inputs and industrial sensor interface protection.
For engineers reviewing the 1.5KE200AHE3_B/C datasheet, 1.5KE200AHE3_B/C pinout, 1.5KE200AHE3_B/C application, or 1.5KE200AHE3_B/C equivalent, this part delivers verified AEC-Q101 qualification (HE3 suffix), RoHS-compliant matte tin-plated leads, glass-passivated junction, and UL 94 V-0 molded epoxy package - critical for high-reliability transient suppression where clamping speed (<1 ns), low incremental surge resistance, and stable thermal derating are design-critical.
Technical Context
This unidirectional TVS diode uses a silicon avalanche junction structure with glass passivation to achieve sub-nanosecond response time and stable breakdown under repetitive transients. Its 1500 W peak pulse rating is defined per 10/1000 µs waveform at ≤0.01% duty cycle, with clamping performance validated up to 5.5 A IPPM and thermal resistance of RθJL = 15.4 °C/W to lead.
The device exhibits a positive temperature coefficient of VBR (+0.108 %/°C), enabling predictable voltage drift across temperature, and supports forward surge capability up to 200 A (8.3 ms half-sine). Its 175 °C max junction temperature and 6.5 W steady-state power dissipation allow integration into thermally constrained PCB layouts without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 190 V / 210 V at 1 mA - defines precise avalanche onset threshold for reliable overvoltage triggering |
| VWM | 171 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA |
| VC @ IPPM | 274 V at 5.5 A - clamped voltage during 10/1000 µs surge, limiting downstream component stress |
| PPPM | 1500 W - peak transient energy absorption capacity under standardized lightning/surge conditions |
| TJ range | –55 °C to +175 °C - enables deployment in under-hood automotive and industrial ambient environments |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package with 0.375" lead length, UL 94 V-0 compliant |
| AEC-Q101 | Qualified - certified for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
1.5KE200AHE3_B/C is housed in a DO-201AD (Case Style 1.5KE) axial-leaded package with cathode indicated by a color band. Leads are matte tin-plated and solderable per J-STD-002/JESD 22-B102; package meets UL 94 V-0 flammability rating and JEDEC outline dimensions (1.0" body length, 0.210" diameter).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; conducts during forward surge events (e.g., reverse polarity faults) |
| Cathode (banded end) | Avalanche clamping terminal | Connected to higher-potential side; initiates breakdown when reverse voltage exceeds VWM, shunting surge current to ground |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable, low-leakage avalanche behavior and long-term reliability under repeated surge stress |
| 1500 W 10/1000 µs pulse rating | Meets IEC 61000-4-5 Level 4 surge immunity requirements for industrial and automotive power inputs |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces |
| Sub-1 ns response time | Clamps transients before sensitive ICs (e.g., microcontrollers, CAN transceivers) experience damaging overvoltage |
| UL 94 V-0 epoxy molding | Prevents flame propagation in safety-critical enclosures and meets regulatory fire-safety mandates |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs against load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Primary clamping device placed between power rail and ground, absorbing >100 V spikes within nanoseconds. Use Value: Limits voltage seen by downstream LDOs and MCUs to ≤274 V, preventing latch-up or gate oxide damage in automotive-grade silicon. | Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and inductive switching noise in factory automation. IC Role / Device Role / Timing Role: Unidirectional shunt protector on 4–20 mA or 0–10 V output lines, referenced to system ground. Use Value: Clamps fast-rising transients (e.g., relay coil kickback) before they corrupt ADC readings or damage op-amp input stages. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: Safeguarding PoE-powered equipment (e.g., IP cameras, access points) from induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Standoff-rated TVS on DC input stage, coordinated with upstream MOVs for multi-stage protection. Use Value: Provides precise 171 V standoff with low capacitance, avoiding signal distortion while handling 1500 W surges per IEC 61000-4-5. | Use Scenario: Suppressing commutation spikes from brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Low-inductance TVS mounted directly across motor terminals or at driver IC supply pins. Use Value: Absorbs repetitive 200 A surge currents (8.3 ms half-sine) without degradation, extending MOSFET and gate driver lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ200A | DO-214AA package (SMB), 200 V VBR, 1000 W PPPM, 2x smaller footprint, higher thermal resistance (RθJA ≈ 50 °C/W) | Preferred for space-constrained PCBs where 1000 W suffices; less suitable for high-temperature chassis mounting | Select SMBJ200A when board area is limited and peak surge energy is ≤1000 W; verify thermal margin at 75 °C ambient. |
| 1.5KE200A-E3/54 | Same 1.5KE package and electrical specs, but commercial-grade (non-AEC-Q101), reel packaging with code "54", no HE3 qualification | Acceptable for non-automotive industrial or consumer use where automotive reliability certification is not required | Choose 1.5KE200A-E3/54 for cost-sensitive volume production outside automotive; confirm lifecycle continuity separately. |
Compared with 1.5KE200AHE3_B/C, SMBJ200A trades peak power and thermal robustness for compactness, while 1.5KE200A-E3/54 retains identical form/fit/function but omits AEC-Q101 validation - making the HE3 variant the only choice for automotive OEM designs requiring certified reliability.
Availability
1.5KE200AHE3_B/C is available at Aetrix Electronics and suitable for automotive power systems, industrial sensor interfaces, telecom DC feeds, and appliance motor drive circuits requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1.5KE200AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The 1.5KE series was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure modes must be mitigated via proven avalanche ruggedness and AEC-Q101 compliance.
FAQ
What is the clamping voltage of the 1.5KE200AHE3_B/C under a 10/1000 µs surge?
The 1.5KE200AHE3_B/C clamps to a maximum of 274 V at its rated peak pulse current of 5.5 A (IPPM) under a 10/1000 µs waveform. This value is measured per standard test conditions (TA = 25 °C) and ensures downstream components remain below destructive voltage thresholds during surge events. The clamping performance is guaranteed across the full operating temperature range.
Is the 1.5KE200AHE3_B/C suitable for automotive applications?
Yes, the 1.5KE200AHE3_B/C is AEC-Q101 qualified (denoted by the HE3 suffix), making it suitable for automotive applications including engine control units, body electronics, and ADAS sensor interfaces. Its construction - glass-passivated junction, UL 94 V-0 epoxy, and 175 °C max junction temperature - meets stringent automotive reliability and safety requirements.
What does the "HE3_B/C" suffix indicate in 1.5KE200AHE3_B/C?
The "HE3" suffix indicates RoHS compliance and AEC-Q101 qualification; "B/C" denotes the packaging configuration - 13" diameter paper tape and reel, with base quantity 1400 units. The "HE3" designation differentiates it from commercial-grade variants like 1.5KE200A-E3/54, which lack automotive qualification.
How does the 1.5KE200AHE3_B/C compare to bidirectional TVS diodes?
The 1.5KE200AHE3_B/C is unidirectional and intended for DC line protection where polarity is fixed - it blocks reverse voltage up to VWM = 171 V and clamps positive transients. Bidirectional variants (e.g., 1.5KE200CA) are used in AC or floating lines; they clamp both polarities but have lower VBR range (≤220 V) and are not offered for 1.5KE200AHE3_B/C's voltage grade.
What is the thermal resistance of the 1.5KE200AHE3_B/C?
The 1.5KE200AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W and junction-to-ambient resistance (RθJA) of 75 °C/W. These values enable effective heat dissipation through PCB copper pours or chassis mounting - critical for sustaining 6.5 W steady-state power and managing surge-induced thermal spikes in high-reliability applications.
1.5KE200AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 171V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 274V
- Current - Peak Pulse (10/1000µs):
- 5.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1.5KE200AHE3_B/C FAQ
1.How can I place an order for 1.5KE200AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1.5KE200AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1.5KE200AHE3_B/C reliable?
The price and inventory of 1.5KE200AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5KE200AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1.5KE200AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5KE200AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1.5KE200AHE3_B/C?
1.5KE200AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1.5KE200AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1.5KE200AHE3_B/C?
For technical support, including 1.5KE200AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5KE200AHE3_B/C requirements.
6.How does Aetrix verify that 1.5KE200AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1.5KE200AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5KE200AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1.5KE200AHE3_B/C?
All 1.5KE200AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1.5KE200AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1.5KE200AHE3_B/C part is unused and in its original packaging.
Return procedure for 1.5KE200AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1.5KE200AHE3_B/C Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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