Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 1.5SMC82AHE3_A/H

Part No.:
1.5SMC82AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
Aetrix1.5SMC82AHE3_A/H.pdf
Description:
TVS DIODE 70.1VWM 113VC SMC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,534

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1.5SMC82AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, rated for 82 V breakdown voltage (VBR = 77.9–86.1 V at 1 mA), 70.1 V stand-off voltage (VWM), and 113 V clamping voltage (VC) at 13.3 A peak pulse current. It delivers 1500 W peak pulse power (10/1000 µs), supports automotive-grade reliability (AEC-Q101 qualified), and protects MOSFETs and ICs against lightning-induced transients in industrial power supplies.

For engineers reviewing the 1.5SMC82AHE3_A/H datasheet, 1.5SMC82AHE3_A/H pinout, 1.5SMC82AHE3_A/H application, or 1.5SMC82AHE3_A/H equivalent, this page provides verified electrical parameters, thermal derating behavior, clamping performance under surge conditions, and AEC-Q101 qualification status - all critical for ESD and surge protection design in automotive and industrial DC power rails.

Technical Context

This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM (70.1 V), it avalanches near VBR (77.9–86.1 V) and clamps transient energy to ≤113 V at 13.3 A. Its glass-passivated junction ensures stable breakdown and low leakage (<1 µA at VWM).

Designed for high-reliability environments, the 1.5SMC82AHE3_A/H meets MSL Level 1 (reflow peak 260 °C), features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and carries AEC-Q101 qualification - confirming suitability for automotive powertrain and body electronics where surge immunity and long-term stability are mandatory.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 77.9 V / 86.1 V at 1 mA - defines precise avalanche onset range for predictable clamping initiation
VWM 70.1 V - maximum continuous reverse operating voltage before leakage rises significantly
VC @ IPPM 113 V at 13.3 A (10/1000 µs) - peak clamped voltage seen by protected circuit during worst-case surge
PPPM 1500 W - surge energy handling capacity per single transient event without degradation
IFSM 200 A (8.3 ms half-sine) - forward surge rating for unidirectional operation during fault recovery
TJ max +150 °C - maximum junction temperature enabling use in under-hood automotive environments
RθJA 75 °C/W - thermal resistance from junction to ambient on standard 8 mm × 8 mm copper pads

Pinout & Package

Package: SMC (DO-214AB), surface-mount, low-profile case with molded UL 94 V-0 compound and cathode band marking.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / reverse voltage reference Connected to system ground or lower-potential rail; defines polarity for unidirectional clamping
Cathode Avalanche conduction terminal Marked with band; connected to protected line (e.g., 48 V rail); conducts surge current to ground during overvoltage

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control units and ADAS power domains
1500 W peak pulse power (10/1000 µs) Handles IEC 61000-4-5 Level 4 surges (4 kV line-earth) without failure in properly laid-out PCBs
Low clamping ratio (VC/VBR ≈ 1.42) Minimizes voltage overshoot across protected ICs, reducing risk of gate oxide damage in MOSFETs
MSL Level 1 moisture sensitivity Enables standard reflow assembly without baking, lowering manufacturing cost and cycle time
Glass-passivated junction Ensures stable VBR over temperature and lifetime, critical for field-reliable surge protection

Applications

Automotive Power Supply Protection Industrial DC Motor Drive Inputs

Use Scenario: Protecting 48 V battery-fed ECUs from load dump and alternator transients in vehicles.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp spikes up to 120 V.

Use Value: Clamps to 113 V within nanoseconds, preventing latch-up or destruction of downstream PMICs and microcontrollers.

Use Scenario: Safeguarding H-bridge gate drivers from inductive kickback during motor commutation.

IC Role / Device Role / Timing Role: Fast-response TVS absorbing reverse EMF energy from motor windings into ground path.

Use Value: Limits voltage excursion to ≤113 V, avoiding gate-source overvoltage on 100 V-rated MOSFETs in 24 V systems.

Telecom PoE+ Data Line Protection Renewable Energy Charge Controller Inputs

Use Scenario: Shielding Ethernet PHY interfaces powered via IEEE 802.3at (PoE+) from induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: Bidirectional-capable variant family member used in unidirectional configuration on DC bias lines.

Use Value: Withstands repeated 10/1000 µs transients up to 1500 W while maintaining <1 µA leakage at 70.1 V standby.

Use Scenario: Securing solar panel input terminals of MPPT controllers against lightning-induced surges in off-grid installations.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on PV string inputs, mounted directly at connector entry point.

Use Value: Maintains 1500 W surge rating and +150 °C operation to survive desert-temperature environments with high UV exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ82A-E3/52 Lower peak power (600 W), SMB package (smaller footprint, higher RθJA = 85 °C/W) Suitable for space-constrained consumer electronics but not automotive-level surge robustness Select when board area is critical and surge threat level is ≤IEC 61000-4-5 Level 2
1.5KE82A Through-hole DO-201 package, same VBR/VC, but no AEC-Q101 qualification or MSL Level 1 rating Limited to non-automotive industrial equipment with manual assembly or wave soldering Choose only for legacy through-hole designs where rework to SMD is impractical

Compared with SMBJ82A-E3/52 and 1.5KE82A, the 1.5SMC82AHE3_A/H uniquely combines AEC-Q101 qualification, 1500 W surge capability, and SMC surface-mount compatibility - making it the only option among the three validated for automotive power domain deployment with zero layout compromise.

Availability

1.5SMC82AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECU protection, industrial motor drive inputs, telecom PoE+ interfaces, and renewable energy charge controller designs requiring stable component supply, AEC-Q101 compliance, and repeatable surge immunity performance.

Supply support for 1.5SMC82AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific validation.

The 1.5SMC Series was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where sustained surge immunity and long-term parametric stability are non-negotiable.

FAQ

What is the clamping voltage of the 1.5SMC82AHE3_A/H under a 10/1000 µs surge?

The 1.5SMC82AHE3_A/H clamps to a maximum of 113 V when subjected to its rated peak pulse current of 13.3 A using the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88303 and reflects worst-case voltage seen by downstream components during surge events - a key parameter for ensuring protected ICs remain within absolute maximum ratings.

Is the 1.5SMC82AHE3_A/H qualified for automotive applications?

Yes, the 1.5SMC82AHE3_A/H is explicitly AEC-Q101 qualified, as confirmed by its "HE3" suffix and documentation in Vishay's 1.5SMC series datasheet (Rev. 09-Mar-2026). This qualification covers stress testing for temperature cycling, humidity, mechanical shock, and surge endurance - validating its use in automotive powertrain, body control, and ADAS modules where reliability is mission-critical.

What does the "_A/H" suffix mean in 1.5SMC82AHE3_A/H?

The "_A/H" suffix in 1.5SMC82AHE3_A/H indicates two attributes: "A" denotes the revision level of the device (per Vishay's ordering note), and "H" specifies the packaging format - 7-inch diameter plastic tape and reel with 850 units per reel. This matches the preferred ordering code format defined in the datasheet's Ordering Information table on page 3.

How does the thermal resistance of the 1.5SMC82AHE3_A/H affect PCB layout?

The 1.5SMC82AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on 8.0 mm × 8.0 mm copper pads per terminal. To maintain safe junction temperatures under repetitive surges, designers must allocate sufficient copper area and avoid thermal bottlenecks - undersized pads or narrow traces will increase RθJA, risking thermal runaway during high-duty-cycle transients.

Can the 1.5SMC82AHE3_A/H be used in bidirectional configurations?

No - the 1.5SMC82AHE3_A/H is a unidirectional TVS diode, indicated by its "A" suffix (e.g., 1.5SMC82A). Bidirectional variants use the "CA" suffix (e.g., 1.5SMC82CA). Using the 1.5SMC82AHE3_A/H in reverse-biased AC signal paths would result in forward conduction and potential failure; always select CA-suffix parts for symmetrical surge protection across differential lines.

1.5SMC82AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
1.5SMC, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
13.3A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

1.5SMC82AHE3_A/H FAQ

1.How can I place an order for 1.5SMC82AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for 1.5SMC82AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1.5SMC82AHE3_A/H reliable?

The price and inventory of 1.5SMC82AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1.5SMC82AHE3_A/H is usually 5 days.

3.What payment methods are accepted for 1.5SMC82AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1.5SMC82AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1.5SMC82AHE3_A/H?

1.5SMC82AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1.5SMC82AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1.5SMC82AHE3_A/H?

For technical support, including 1.5SMC82AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1.5SMC82AHE3_A/H requirements.

6.How does Aetrix verify that 1.5SMC82AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All 1.5SMC82AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1.5SMC82AHE3_A/H meets industry standards.

7.What is the process for return or replacement of 1.5SMC82AHE3_A/H?

All 1.5SMC82AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with 1.5SMC82AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1.5SMC82AHE3_A/H part is unused and in its original packaging.

Return procedure for 1.5SMC82AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1.5SMC82AHE3_A/H Tags

  • 1.5SMC82AHE3_A/H
  • 1.5SMC82AHE3_A/H PDF
  • 1.5SMC82AHE3_A/H Datasheet
  • 1.5SMC82AHE3_A/H Specifications
  • 1.5SMC82AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 1.5SMC82AHE3_A/H
  • Buy 1.5SMC82AHE3_A/H
  • 1.5SMC82AHE3_A/H Price
  • 1.5SMC82AHE3_A/H Distributor
  • 1.5SMC82AHE3_A/H Supplier
  • 1.5SMC82AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER