My Inquiry
My Account
Microchip Technology 1N1126R
- Part No.:
- 1N1126R
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-203AA, DO-4, Stud
- Datasheet:
-
1N1126R.pdf
- Description:
- DIODE GEN PURP REV 400V 12A DO4
- Quantity:
- Payment:
- Shipping:
Inventory:6,438
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N1126R from Microsemi is a high-reliability glass-passivated power rectifier diode rated for 400 V peak repetitive reverse voltage (VRRM), 3.3 A average forward current at TC = 150°C, and 25 A surge current (IFSM), used in military-grade DC power supplies and ruggedized AC/DC front-ends.
For engineers reviewing the 1N1126R datasheet, 1N1126R pinout, 1N1126R application, or 1N1126R equivalent, key selection factors include its DO-203AA (DO-4) stud-mount package, 2.0°C/W junction-to-case thermal resistance, low 2.2 V forward voltage at 10 A, and MIL-PRF-19500/260 qualification for harsh-environment deployment.
Technical Context
This axial-leaded, stud-mounted rectifier uses glass-to-metal seal construction and glass-passivated die to ensure hermeticity and stability under thermal cycling and high-voltage stress. It operates across -65°C to +150°C case temperature and supports storage up to +200°C.
Reverse leakage is tightly controlled: ≤5 μA at 400 V and 25°C, and ≤200 μA at 400 V and 150°C - critical for maintaining efficiency in high-temperature power conversion stages where leakage-induced losses must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 400 V - maximum repetitive reverse blocking voltage before breakdown; defines usable input voltage range in AC line rectification. |
| IF(AV) | 3.3 A at TC = 150°C - continuous forward current capability with heatsink; sets minimum heatsink sizing requirement. |
| IFSM | 25 A (8.3 ms half-sine) - surge withstand rating; enables robustness against inrush and transient overloads. |
| Rθjc | 2.0°C/W - thermal resistance from junction to case; determines temperature rise per watt dissipated under conduction. |
| VF | 2.2 V @ 10 A, 25°C - forward drop at rated load; directly impacts conduction loss and thermal design margin. |
| IR | ≤5 μA @ 400 V, 25°C - low reverse leakage ensures minimal standby power loss in high-impedance bias networks. |
Pinout & Package
Package: DO-203AA (DO-4), stud-mounted metal case with threaded anode terminal and insulated cathode lead. Hermetic glass-to-metal seal ensures long-term reliability in vacuum, radiation, and high-humidity environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Forward current entry point | Threaded metal stud serves as both electrical connection and mechanical mounting surface; requires torque-controlled installation (≤15 in-lb). |
| Cathode (Lead) | Forward current exit point | Insulated axial lead provides isolation from chassis ground; polarity marking 'R' indicates reversed (anode-to-stud) configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated die | Eliminates surface contamination sensitivity and improves long-term parameter stability under thermal/humidity stress. |
| Glass-to-metal seal | Provides hermeticity exceeding MIL-STD-883 Method 1014, enabling operation in vacuum and corrosive atmospheres. |
| MIL-PRF-19500/260 qualified | Meets screening, testing, and traceability requirements for Class B military and aerospace power systems. |
| DO-203AA stud mount | Enables direct thermal coupling to heatsinks or chassis without additional hardware; simplifies mechanical integration in high-power modules. |
Applications
| Military Power Supplies | Aerospace Avionics DC Bus |
|---|---|
Use Scenario: Primary rectification stage in 28 V DC aircraft power distribution units handling generator and battery inputs. IC Role / Device Role / Timing Role: High-reliability power rectifier converting 115 VAC 400 Hz aircraft bus to unregulated DC. Use Value: 25 A surge rating and -65°C to +150°C operation ensure uninterrupted function during cold-soak start-up and engine transients. | Use Scenario: Input rectifier in radiation-hardened satellite power conditioning modules. IC Role / Device Role / Timing Role: Front-end diode in multi-kW solar array regulators requiring zero failure-in-time (FIT) performance. Use Value: Glass-to-metal seal and MIL-PRF-19500/260 qualification guarantee hermetic integrity and parametric stability in orbital vacuum. |
| Industrial Motor Drive Snubbers | Ruggedized Test Equipment |
Use Scenario: Freewheeling path in IGBT-based servo drive brake circuits exposed to frequent regenerative energy spikes. IC Role / Device Role / Timing Role: Clamp diode absorbing inductive kickback during rapid motor deceleration. Use Value: 2.0°C/W Rθjc and 25 A IFSM enable reliable energy dissipation without thermal runaway under repeated 100 ms surges. | Use Scenario: Output rectifier in portable high-voltage calibration sources used in field metrology labs. IC Role / Device Role / Timing Role: Precision rectifier element in ±1 kV programmable DC supplies. Use Value: Low 5 μA IR at 400 V ensures stable output regulation and minimal drift during extended calibration cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability power rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N1126A | Same VRRM (400 V), IF(AV) (3.3 A), and package; non-R version has standard (cathode-to-stud) polarity. | Used where cathode grounding is preferred; requires PCB layout revision if replacing 1N1126R. | Select 1N1126A only when anode-to-chassis mounting is not required and polarity alignment matches existing design. |
| 1N3649R | Higher VRRM (800 V); identical DO-203AA package, R-suffix polarity, and MIL-PRF-19500/260 qualification. | Suitable for 400–600 VAC input stages; higher voltage margin increases safety factor but raises VF slightly. | Choose 1N3649R when system input voltage exceeds 400 V PIV or when derating for long-life mission profiles is critical. |
Compared with 1N1126A and 1N3649R, the 1N1126R offers optimized balance of 400 V blocking, low forward drop, and reversed polarity for anode-grounded topologies - making it ideal for compact, thermally constrained military DC supplies where polarity and thermal resistance are decisive.
Availability
1N1126R is available at Aetrix Electronics and suitable for military power supplies, aerospace avionics DC buses, and industrial motor drive snubbers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N1126R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and military qualification.
The 1N1126R belongs to Microsemi's legacy high-reliability power rectifier family, engineered specifically for MIL-PRF-19500/260-compliant applications demanding hermetic packaging, surge resilience, and stable parametric performance across extreme environmental conditions.
FAQ
What does the 'R' suffix mean in 1N1126R?
The 'R' suffix in 1N1126R indicates reversed polarity: the anode is connected to the metal stud, and the cathode is the insulated axial lead. This configuration allows direct mounting of the anode to a grounded heatsink or chassis, simplifying thermal and electrical integration in anode-grounded power topologies. The 1N1126R maintains identical electrical ratings and package dimensions as the non-R variant, differing only in terminal polarity.
Is 1N1126R suitable for space-grade applications?
Yes, the 1N1126R is qualified to MIL-PRF-19500/260 Class B and features glass-to-metal hermetic sealing, making it suitable for space-grade applications where outgassing, vacuum compatibility, and long-term parametric stability are required. Its -65°C to +150°C operating range and 200°C storage limit further support use in LEO and GEO satellite power systems, provided full lot traceability and radiation test data are obtained per program requirements.
What is the thermal performance of 1N1126R under continuous operation?
The 1N1126R has a junction-to-case thermal resistance (Rθjc) of 2.0°C/W, meaning each watt of power dissipated produces a 2°C temperature rise from junction to case. At its rated 3.3 A average forward current and typical 2.2 V forward drop, conduction loss is ~7.3 W - resulting in a ~14.6°C junction-to-case rise above heatsink temperature. Proper mounting torque (≤15 in-lb) and flat, clean mounting surface are essential to maintain this thermal performance.
How does 1N1126R compare to commercial-grade rectifiers like 1N5408?
The 1N1126R differs fundamentally from commercial rectifiers such as the 1N5408: it is MIL-PRF-19500/260 qualified, uses glass-passivated die and glass-to-metal sealing, operates from -65°C to +150°C, and delivers 25 A surge rating in a stud-mount DO-203AA package. In contrast, the 1N5408 is plastic-packaged, rated only to +175°C storage, lacks military screening, and has no hermeticity - making the 1N1126R appropriate only for high-integrity, life-critical systems.
Can 1N1126R be used in parallel configurations?
Parallel operation of 1N1126R devices is not recommended without external balancing - its forward voltage (VF) tolerance is not specified for matching, and minor VF variations can cause current imbalance and thermal runaway. If higher current capacity is needed, select a higher-rated single device (e.g., 1N1128R) or implement active current-sharing circuitry. For mission-critical systems, consult Microsemi's application guidance on paralleling high-reliability rectifiers before implementation.
1N1126R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-203AA, DO-4, Stud
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 400 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Stud Mount
- Supplier Device Package:
- DO-4 (DO-203AA)
- Operating Temperature - Junction:
- -65°C ~ 200°C
1N1126R FAQ
1.How can I place an order for 1N1126R through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N1126R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N1126R reliable?
The price and inventory of 1N1126R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N1126R is usually 5 days.
3.What payment methods are accepted for 1N1126R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N1126R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N1126R?
1N1126R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N1126R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N1126R?
For technical support, including 1N1126R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N1126R requirements.
6.How does Aetrix verify that 1N1126R is sourced from the original manufacturer or authorized distributors?
All 1N1126R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N1126R meets industry standards.
7.What is the process for return or replacement of 1N1126R?
All 1N1126R units undergo pre-shipment inspection (PSI). If there is an issue with 1N1126R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N1126R part is unused and in its original packaging.
Return procedure for 1N1126R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N1126R Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
