Microchip Technology 1N1186
- Part No.:
- 1N1186
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-203AB, DO-5, Stud
- Datasheet:
-
1N1186.pdf
- Description:
- DIODE GEN PURP REV 200V 35A DO5
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
1N1186 from Microsemi is a high-reliability silicon power rectifier in DO-5 (DO-203AB) hermetically sealed metal-glass package, rated for 200 V peak reverse voltage (VRWM), 35 A average DC output current at TC = 150 °C, and 500 A non-repetitive surge current. It serves as a rugged, low-VF main rectifier in high-power military-grade power supplies and motor drive front-ends.
For engineers reviewing the 1N1186 datasheet, 1N1186 pinout, 1N1186 application, or 1N1186 equivalent, key selection criteria include its JANTXV qualification per MIL-PRF-19500/297, 0.8 °C/W junction-to-case thermal resistance, glass-passivated die construction, and anode-to-stud polarity (R suffix).
Technical Context
This device operates as a single-junction, standard-polarity (anode-to-stud), axial-leaded silicon PN junction rectifier with glass passivation and hermetic metal-glass sealing. Its electrical behavior is defined by forward conduction up to 110 A at 25 °C (VF ≤ 1.4 V) and leakage control under VRWM = 200 V across –65 °C to +175 °C junction temperature range.
Thermal performance is governed by a fixed RθJC of 0.8 °C/W and linear derating of IO from 35 A at 150 °C to zero at 175 °C. Reverse recovery is not specified; it is intended for line-frequency and moderate-switching applications-not fast recovery or soft-recovery use cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 200 V - Maximum continuous reverse voltage before breakdown at full temperature range. |
| IO @ TC = 150 °C | 35 A - Sustained average rectified output current with heatsink maintaining case at 150 °C. |
| IFSM @ 1/120 s | 500 A - Short-duration surge capability during line transients or motor startup. |
| VF @ IF = 110 A, TC = 25 °C | ≤1.4 V - Low conduction loss enabling efficient power conversion at nominal load. |
| RθJC | 0.8 °C/W - Enables precise thermal design with minimal temperature rise from junction to mounting surface. |
| TJ / TSTG Range | –65 °C to +175 °C - Supports operation in extreme environmental conditions including aerospace and downhole systems. |
Pinout & Package
Package: DO-5 (DO-203AB), hermetically sealed metal case with glass-to-metal seal, anode-to-stud polarity (R suffix), hot-solder-dip (Sn63/Pb37) terminations for JAN/JANTX/JANTXV grades, ~14 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Input terminal for forward conduction path | Mounted directly to heatsink; carries full load current and serves as primary thermal interface. |
| Cathode (Lead) | Output terminal for forward conduction path | Axial wire lead for PCB or busbar connection; polarity marked on case. |
Key Features
| Feature | Design Value |
|---|---|
| JANTXV qualification | Complies with MIL-PRF-19500/297 for high-reliability defense/aerospace programs requiring extended screening and lot traceability. |
| Glass-passivated die | Enhances long-term stability and moisture resistance versus plastic-encapsulated alternatives. |
| Hermetic metal-glass seal | Prevents internal corrosion and ensures >20-year operational life under thermal cycling and humidity stress. |
| Low RθJC (0.8 °C/W) | Reduces required heatsink size by ~30% compared to similar-rated rectifiers with RθJC ≥ 1.1 °C/W. |
Applications
| Avionics Power Supply | Military Radar Transmitter |
|---|---|
Use Scenario: 3-phase AC-to-DC conversion in airborne 400 Hz power distribution units. IC Role / Device Role / Timing Role: Main input rectifier handling sustained 25 A loads with transient surges up to 400 A. Use Value: JANTXV qualification and –65 °C to +175 °C rating ensure reliability across flight envelopes and storage conditions. | Use Scenario: High-current pulse charging of modulator capacitors in ground-based radar transmitters. IC Role / Device Role / Timing Role: Primary surge-handling rectifier during pulsed RF amplifier duty cycles. Use Value: 500 A IFSM and low VF minimize energy loss and thermal stress during repetitive 10 ms pulses. |
| Industrial Motor Drive Front-End | Downhole Oilfield Tool Power |
Use Scenario: Uncontrolled rectification stage feeding DC link in 480 VAC industrial VFDs. IC Role / Device Role / Timing Role: Line-frequency rectifier operating continuously at 30 A with ambient case temperatures up to 150 °C. Use Value: Linear derating curve and 0.8 °C/W RθJC allow predictable thermal margin without oversized heatsinks. | Use Scenario: Primary AC/DC conversion in sealed logging tools deployed at 175 °C borehole temperatures. IC Role / Device Role / Timing Role: Sole high-voltage rectifier surviving prolonged exposure to elevated junction temperature. Use Value: +175 °C max TJ and hermetic seal prevent parametric drift or failure under sustained thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability power rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N1188(R) | Higher VRWM (400 V) but identical package, thermal resistance, and surge rating. | Suitable where system reverse voltage exceeds 200 V but same current and thermal profile applies. | Select 1N1188(R) only if VRWM margin requires >200 V; otherwise 1N1186(R) offers optimal cost/performance balance. |
| 1N3766(R) | VRWM = 800 V, same IO and IFSM, but higher VF (1.5 V @ 110 A) and RθJC = 0.9 °C/W. | Used in ultra-high-voltage DC links where 200–800 V design flexibility is needed. | Choose 1N3766(R) only when reverse voltage demands exceed 400 V; avoid for 200 V systems due to unnecessary VF penalty. |
Compared with 1N1186(R), 1N1188(R) provides higher reverse blocking with no thermal or surge trade-off, while 1N3766(R) sacrifices conduction efficiency and thermal performance for extended voltage range-making 1N1186(R) the optimal choice for 200 V-class high-reliability rectification.
Availability
1N1186 is available at Aetrix Electronics and suitable for avionics power supplies, military radar transmitters, and industrial motor drive front-ends requiring stable component supply under extended lifecycle and obsolescence management.
Supply support for 1N1186 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N1186 belongs to Microsemi's legacy MIL-qualified silicon power rectifier product line, engineered specifically for mission-critical power conversion where hermeticity, surge robustness, and extended temperature operation are mandatory.
FAQ
What does the "R" suffix mean in 1N1186(R)?
The "R" suffix in 1N1186(R) denotes anode-to-stud polarity, meaning the metal stud serves as the anode terminal and must be electrically isolated from the cathode lead. This configuration is standard for high-current mounting where the stud interfaces directly with a heatsink. The 1N1186(R) is not interchangeable with cathode-to-stud versions without circuit redesign.
Is 1N1186 RoHS compliant?
The 1N1186(R) is available in RoHS-compliant form only for commercial-grade versions, using matte-tin over nickel plating. JAN, JANTX, and JANTXV qualified 1N1186(R) devices retain Sn63/Pb37 hot-solder-dip terminations and are exempt from RoHS per MIL-PRF-19500 requirements. Always verify grade and compliance level at time of order.
What is the maximum junction temperature for 1N1186(R)?
The maximum allowable junction temperature for 1N1186(R) is +175 °C, with storage temperature matching this range. Operation above this limit risks irreversible degradation of the silicon die and glass passivation layer. Thermal design must maintain TJ ≤ 175 °C under worst-case conduction and surge conditions.
Does 1N1186(R) have a specified reverse recovery time (trr)?
No, reverse recovery time (trr) is not specified for 1N1186(R) in the official Microsemi datasheet T4-LDS-0138. The device is characterized as a standard recovery rectifier intended for line-frequency (50/60 Hz) and moderate-switching applications-not high-frequency switching where trr is critical.
Can 1N1186(R) be used in parallel configurations?
Parallel operation of 1N1186(R) devices is not recommended without external current-sharing measures such as matched series resistors or active balancing. Variations in forward voltage (VF) between units-even within datasheet limits-can cause unequal current distribution and thermal runaway. For higher current needs, select a single higher-rated device or consult Microsemi's application guidance.
1N1186 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-203AB, DO-5, Stud
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 35A
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 110 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Stud Mount
- Supplier Device Package:
- DO-5 (DO-203AB)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N1186 FAQ
1.How can I place an order for 1N1186 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N1186 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N1186 reliable?
The price and inventory of 1N1186 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N1186 is usually 5 days.
3.What payment methods are accepted for 1N1186?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N1186 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N1186?
1N1186 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N1186 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N1186?
For technical support, including 1N1186 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N1186 requirements.
6.How does Aetrix verify that 1N1186 is sourced from the original manufacturer or authorized distributors?
All 1N1186 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N1186 meets industry standards.
7.What is the process for return or replacement of 1N1186?
All 1N1186 units undergo pre-shipment inspection (PSI). If there is an issue with 1N1186, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N1186 part is unused and in its original packaging.
Return procedure for 1N1186:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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