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Microchip Technology 1N3600UR/TR
- Part No.:
- 1N3600UR/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-213AA
- Datasheet:
-
1N3600UR/TR.pdf
- Description:
- SIGNAL OR COMPUTER DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:177
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Product details
Overview
1N3600UR/TR from Microsemi is a hermetically sealed, metallurgically bonded, double-plug MELF switching diode in DO-213AA package with 75 V reverse breakdown voltage, 50 V reverse working voltage, and 4 ns typical reverse recovery time. It operates from –65°C to +175°C and supports 300 mA DC forward current at 25°C for high-reliability signal routing in aerospace timing circuits.
For engineers reviewing the 1N3600UR/TR datasheet, 1N3600UR/TR pinout, 1N3600UR/TR application, or 1N3600UR/TR equivalent, key selection criteria include reverse recovery time under pulsed 10–100 mA conditions, thermal impedance of 70 °C/W, junction temperature limits, forward voltage at 100 mA (0.82–0.92 V), and hermetic glass packaging for radiation-tolerant environments.
Technical Context
This diode uses a planar double-plug construction with metallurgical bonding to ensure stable junction characteristics across extreme temperature ranges. Its DO-213AA (MELF/SOD-80/LL34) glass package provides hermetic sealing and a coefficient of expansion matched to ceramic substrates.
Designed for fast switching in pulse and timing applications, it delivers 4 ns reverse recovery time at IF = IR = 10–100 mA with RL = 100 Ω, and maintains low leakage: ≤0.1 µA at VR = 50 V and ≤100 µA at 150°C - critical for precision oscillator biasing and sample-hold circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR | 75 V - minimum reverse breakdown voltage ensures margin above 50 V system rail in MIL-STD-704 avionics power interfaces |
| VRWM | 50 V - maximum continuous reverse working voltage defines safe blocking capability in pulse-shaping networks |
| trr | 4 ns - measured at IF = IR = 10–100 mA, RL = 100 Ω; enables >100 MHz switching in RF detector front-ends |
| IF (max) | 300 mA @ 25°C - DC forward current rating sets usable drive level for logic-level clamping without derating |
| Cj | 2.5 pF - junction capacitance at zero bias supports minimal signal distortion in high-frequency sampling gates |
| TJ range | –65°C to +175°C - full military-grade junction temperature range validated for engine-mounted sensor conditioning |
Pinout & Package
DO-213AA (MELF) hermetically sealed glass package with axial leads; cathode identified by band on one end. No discrete pins - two-terminal device with axial symmetry and no orientation-dependent mounting polarity beyond cathode marking.
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass seal | Prevents moisture ingress and long-term parameter drift in sealed avionics enclosures per MIL-PRF-19500/231 |
| Double-plug construction | Reduces series resistance and improves thermal coupling between junction and case for stable trr over temperature |
| Metallurgical bonding | Eliminates wire bonds and interfacial voids, enabling reliable operation at 175°C junction temperature |
| Low Cj / trr product | 2.5 pF × 4 ns = 10 ps - supports clean edge fidelity in sub-10 ns pulse generation circuits |
Applications
| Avionics Timing Reference | High-Temperature Sensor Signal Conditioning |
|---|---|
Use Scenario: Precision pulse shaping in inertial navigation system clock distribution networks operating at –55°C to +125°C ambient. IC Role / Device Role / Timing Role: Fast-switching clamp diode in Schmitt-trigger input stage of radiation-hardened timing ICs. Use Value: 4 ns trr and 2.5 pF Cj preserve rise/fall time integrity of 10–50 MHz reference clocks. | Use Scenario: Bias network protection for RTD and thermocouple front-ends mounted near turbine exhaust manifolds. IC Role / Device Role / Timing Role: Reverse-polarity protection and transient clamping element in analog signal path. Use Value: Stable 0.1 µA IR at 50 V and 150°C prevents offset drift in µV-level bridge measurements. |
| MIL-STD-704 Power Interface | Pulse Generator Output Stage |
Use Scenario: Input rectification and surge suppression in 28 V DC aircraft power supply monitoring modules. IC Role / Device Role / Timing Role: Fast-recovery switching diode in crowbar and foldback protection circuitry. Use Value: 75 V VBR provides 50% headroom above 28 V nominal with 4 A surge capability for lightning-induced transients. | Use Scenario: Output isolation and waveform sharpening in programmable pulse generators used in radar test equipment. IC Role / Device Role / Timing Role: Edge-accelerating diode in emitter-coupled logic (ECL) output stage. Use Value: Low forward voltage variation (0.82–0.92 V at 100 mA) ensures consistent pulse amplitude across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CDLL3600 | Same electrical specs and DO-213AA package; identical VBR, trr, and Cj; manufactured under same MIL-PRF-19500/231 spec | No functional difference; CDLL3600 is Microsemi's commercial-grade variant without JAN/JANTX screening | Select CDLL3600 for cost-sensitive industrial designs where MIL-spec screening is not required |
| 1N4150UR-1 | Identical VBR (75 V), VRWM (50 V), trr (4 ns), and package; differs only in screening level (JAN/JANTXV available) | Same circuit function; selected when higher reliability testing (e.g., burn-in, lot acceptance) is mandated | Choose 1N4150UR-1 when full MIL-PRF-19500/231 compliance with traceable lot data is contractually required |
Compared with CDLL3600 and 1N4150UR-1, the 1N3600UR/TR offers identical core switching performance but targets mid-tier reliability requirements - suitable for programs needing hermetic MELF performance without full JAN-level screening overhead or commercial-grade tolerance relaxation.
Availability
1N3600UR/TR is available at Aetrix Electronics and suitable for avionics timing reference, high-temperature sensor signal conditioning, and MIL-STD-704 power interface applications requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N3600UR/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N3600UR/TR belongs to Microsemi's legacy MIL-PRF-19500/231 qualified switching diode family, engineered for hermetic stability and fast recovery in mission-critical timing and power interface circuits.
FAQ
What is the maximum reverse working voltage of the 1N3600UR/TR?
The 1N3600UR/TR has a maximum reverse working voltage (VRWM) of 50 V DC, verified per MIL-PRF-19500/231 test conditions. This rating ensures reliable blocking operation in 28 V aircraft power systems with safety margin, and is distinct from its 75 V breakdown voltage (VBR). Operation above 50 V in continuous reverse bias is not recommended.
Does the 1N3600UR/TR have a specified reverse recovery time?
Yes, the 1N3600UR/TR has a typical reverse recovery time (trr) of 4 ns, measured at IF = IR = 10–100 mA with RL = 100 Ω and ac signals = 50 mV (p-p). This value is confirmed in the manufacturer's design data and applies across the full –65°C to +175°C junction temperature range.
What package type is used for the 1N3600UR/TR?
The 1N3600UR/TR uses the DO-213AA package - a hermetically sealed glass MELF (Metal Electrode Leadless Face) case also referenced as SOD-80 or LL34. Its dimensions are D = 1.60–1.70 mm, G = 3.30–3.70 mm, and F = 0.41–0.55 mm, with tin/lead lead finish and cathode band marking.
Is the 1N3600UR/TR suitable for high-temperature operation?
Yes, the 1N3600UR/TR is rated for junction temperatures from –65°C to +175°C and storage temperatures over the same range. Its metallurgically bonded double-plug construction and hermetic glass seal enable stable electrical parameters - including ≤100 µA reverse leakage at 150°C - in engine bay and avionics bay environments.
How does the 1N3600UR/TR compare to the CDLL3600?
The 1N3600UR/TR and CDLL3600 share identical electrical specifications (VBR, trr, Cj, IF), DO-213AA package, and thermal performance. The primary distinction is qualification level: 1N3600UR/TR meets MIL-PRF-19500/231 screening requirements, while CDLL3600 is commercial-grade with identical die but less rigorous testing.
1N3600UR/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-213AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- 2.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AA
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N3600UR/TR FAQ
1.How can I place an order for 1N3600UR/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3600UR/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3600UR/TR reliable?
The price and inventory of 1N3600UR/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3600UR/TR is usually 5 days.
3.What payment methods are accepted for 1N3600UR/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3600UR/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3600UR/TR?
1N3600UR/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3600UR/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3600UR/TR?
For technical support, including 1N3600UR/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3600UR/TR requirements.
6.How does Aetrix verify that 1N3600UR/TR is sourced from the original manufacturer or authorized distributors?
All 1N3600UR/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3600UR/TR meets industry standards.
7.What is the process for return or replacement of 1N3600UR/TR?
All 1N3600UR/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N3600UR/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3600UR/TR part is unused and in its original packaging.
Return procedure for 1N3600UR/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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