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Microchip Technology 1N3647
- Part No.:
- 1N3647
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- S, Axial
- Datasheet:
-
1N3647.pdf
- Description:
- DIODE GEN PURP 250MA S AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:8,354
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Product details
Overview
1N3647 from Microsemi is a military-qualified, voidless hermetically sealed high-voltage standard recovery rectifier diode rated for 3000 V working peak reverse voltage (VRWM), 0.25 A average forward current at 55 °C, and 2100 V reverse voltage (VR). It features triple-layer passivation, low reverse leakage (≤5 µA at VRWM), and operates from –65 °C to +175 °C - deployed in radar transmitters and X-ray power supplies where failure tolerance is critical.
For engineers reviewing the 1N3647 datasheet, 1N3647 pinout, 1N3647 application, or 1N3647 equivalent, key selection criteria include its JAN/JANTX qualification per MIL-PRF-19500/279, hermetic glass S-package construction, thermal resistance of 38 °C/W, and verified surge current rating of 14 A (8.3 ms).
Technical Context
This device belongs to Microsemi's legacy high-reliability rectifier family designed for DC power conversion in harsh environments. Its standard recovery behavior implies moderate switching speed with controlled reverse recovery charge, optimized for line-frequency (50/60 Hz) rectification rather than high-frequency SMPS use.
The 1N3647 uses tungsten slugs in a voidless hard-glass case to ensure mechanical robustness and hermeticity. Its triple-layer passivation and low IR (≤5 µA @ 3000 V, 25 °C) support stable operation under high electric field stress and elevated temperature conditions up to 175 °C junction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3000 V - maximum continuous peak reverse voltage across full operating temperature range (-65 °C to +175 °C) |
| VR | 2100 V - DC-rated reverse blocking voltage, used for derating and safety margin calculations |
| IO @ 55 °C | 0.25 A - average rectified forward current with heatsinking via 3/8″ lead length; defines usable output in linear power supplies |
| VF @ 250 mA | 5.0 V - forward voltage drop at rated test current; determines conduction loss and thermal load in bridge configurations |
| IR @ VRWM | ≤5 µA @ 25 °C - ultra-low leakage enables stable biasing in high-impedance, high-voltage hold-off circuits |
| RθJL | 38 °C/W - junction-to-lead thermal resistance with 10 mm lead length; guides heatsink design and power derating curves |
| TJ & TSTG | –65 °C to +175 °C - extended temperature range supports deployment in aerospace, defense, and industrial systems without thermal derating penalties |
Pinout & Package
Package: Hermetically sealed voidless hard-glass S-package with tungsten slugs; cathode indicated by band; weight ≈ 400 mg; lead finish: tin/lead or RoHS-compliant matte tin (commercial only).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to AC input or transformer secondary in half-wave or full-wave rectifier topologies |
| Cathode | Forward current exit point | Banded end; connects to positive rail or filter capacitor; polarity must be observed to prevent catastrophic reverse breakdown |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and gas migration, ensuring long-term reliability in vacuum, high-humidity, or radiation-exposed environments |
| Triple-layer passivation | Enhances surface stability against ion contamination and electrical overstress, critical for sustained high-voltage operation |
| JAN/JANTX qualification | Fully tested and certified to MIL-PRF-19500/279 for military-grade screening including burn-in, temperature cycling, and lot acceptance testing |
| Low thermal resistance | 38 °C/W junction-to-lead enables higher power handling without external heatsinks in compact chassis-mount designs |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for space-qualified subsystems without additional shielding or hardening |
Applications
| Radar Transmitter Power Supplies | X-Ray Generator HV Rectification |
|---|---|
Use Scenario: High-voltage DC generation for magnetron or klystron anode bias in pulsed radar systems. IC Role / Device Role / Timing Role: Standard recovery rectifier in voltage-doubler or Cockcroft-Walton multiplier stacks. Use Value: 3000 V VRWM and 14 A surge rating withstand repetitive pulse loads; hermetic seal prevents arcing degradation in vacuum-tube environments. | Use Scenario: Converting high-voltage AC from resonant transformers into stable DC for X-ray tube acceleration. IC Role / Device Role / Timing Role: Primary rectifier in multi-kilovolt DC power supplies requiring zero failure tolerance. Use Value: ≤5 µA reverse leakage at 3000 V ensures minimal dose drift; 175 °C max junction temperature accommodates enclosed thermal environments. |
| High-Reliability Half-Bridge Circuits | Military Communication Transceivers |
Use Scenario: Output stage rectification in airborne HF/VHF transmitter power amplifiers. IC Role / Device Role / Timing Role: Catch diode and freewheeling path in inductive load switching circuits. Use Value: 2100 V VR rating provides 30% margin above typical 1500 V bus voltages; tungsten slug construction resists mechanical shock during flight vibration. | Use Scenario: HV bias supply for RF power amplifier stages in tactical radios and SATCOM terminals. IC Role / Device Role / Timing Role: Input rectifier in regulated 28 V or 115 V AC-to-DC converters meeting MIL-STD-461 EMC requirements. Use Value: JAN-level screening guarantees parametric stability across temperature extremes; RoHS-compliant variants available for export-controlled platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3646 | 2500 V VRWM, 1750 V VR, same package and qualification level | Suitable where 500 V lower reverse rating is acceptable for cost or availability reasons | Select when system derating allows 2500 V peak hold-off and no change to PCB layout or thermal design is needed |
| 1N4257 | 3000 V VRWM, but 0.25 A IO only at 55 °C (vs. 1N3647's 0.25 A at 55 °C and 0.10 A at 100 °C); same JAN/JANTX qualification | Designed for lighter thermal loads; less margin at elevated ambient temperatures | Prefer for lower-power, air-cooled applications where 100 °C operation is not required |
Compared with 1N3646 and 1N4257, the 1N3647 delivers the highest VRWM within its immediate family while maintaining identical military qualification and thermal capability at 100 °C - making it optimal for thermally constrained, mission-critical rectification where voltage margin and junction temperature headroom are both decisive.
Availability
1N3647 is available at Aetrix Electronics and suitable for radar transmitters, X-ray generators, and military communication transceivers requiring stable component supply, long-term obsolescence management, and traceable MIL-spec sourcing.
Supply support for 1N3647 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N3647 belongs to Microsemi's legacy high-voltage rectifier product line, engineered specifically for military-grade power conversion where hermeticity, radiation tolerance, and guaranteed parametric stability over extreme temperature ranges are mandatory.
FAQ
What is the maximum working peak reverse voltage (VRWM) specification for the 1N3647?
The 1N3647 has a VRWM of 3000 V, defined as the maximum peak reverse voltage the device can sustain continuously across its full operating temperature range (–65 °C to +175 °C). This value is confirmed in the Electrical Characteristics table on page 4 of Microsemi T4-LDS-0266 Rev. 2 and is central to its use in high-voltage multiplier and transmitter applications.
Is the 1N3647 qualified to MIL-PRF-19500/279, and what levels are available?
Yes, the 1N3647 is qualified to MIL-PRF-19500/279 at both JAN and JANTX reliability levels, as explicitly stated in the DESCRIPTION section of the datasheet. These qualifications include rigorous screening such as burn-in, temperature cycling, and lot acceptance tests - confirming its suitability for mission-critical defense and aerospace systems.
What is the forward voltage drop (VF) of the 1N3647, and at what test condition is it specified?
The 1N3647 has a maximum forward voltage drop of 5.0 V at 250 mA and 25 °C, per Note 1 in the Electrical Characteristics table. This VF value directly impacts conduction losses and thermal design in high-voltage rectifier stacks, especially when multiple devices operate in series or parallel configurations.
Does the 1N3647 have radiation hardness certification, and where is it documented?
Yes, the 1N3647 exhibits inherent radiation hardness validated per Microsemi MicroNote 050, referenced in the APPLICATIONS / BENEFITS section of the datasheet. This characteristic stems from its hermetic glass construction and material selection, enabling use in space-qualified power supplies without supplemental hardening.
What package type and marking convention does the 1N3647 use?
The 1N3647 uses the hermetically sealed voidless hard-glass S-package with tungsten slugs and a cathode band for polarity identification. It is marked with the full part number "1N3647" on the body, consistent with JEDEC nomenclature and MIL-PRF-19500/279 requirements for traceability and authenticity verification.
1N3647 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- S, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 5 V @ 250 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 µA @ 3000 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- S, Axial
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N3647 FAQ
1.How can I place an order for 1N3647 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3647 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3647 reliable?
The price and inventory of 1N3647 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3647 is usually 5 days.
3.What payment methods are accepted for 1N3647?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3647 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3647?
1N3647 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3647 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3647?
For technical support, including 1N3647 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3647 requirements.
6.How does Aetrix verify that 1N3647 is sourced from the original manufacturer or authorized distributors?
All 1N3647 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3647 meets industry standards.
7.What is the process for return or replacement of 1N3647?
All 1N3647 units undergo pre-shipment inspection (PSI). If there is an issue with 1N3647, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3647 part is unused and in its original packaging.
Return procedure for 1N3647:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N3647 Tags
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