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Microchip Technology 1N3647A
- Part No.:
- 1N3647A
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- S, Axial
- Datasheet:
-
1N3647A.pdf
- Description:
- DIODE GP 2100V 250MA S AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:6,168
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Product details
Overview
1N3647A from Microsemi is a military-qualified, voidless hermetically sealed glass high-voltage standard recovery rectifier diode rated for 3000 V working peak reverse voltage (VRWM), 0.25 A average forward current at 55 °C, and 2100 V reverse voltage (VR), used in radar transmitters and high-reliability X-ray power supplies.
For engineers reviewing the 1N3647A datasheet, 1N3647A pinout, 1N3647A application, or 1N3647A equivalent, this page delivers verified electrical ratings, MIL-PRF-19500/279 JAN/JANTX qualification status, thermal resistance (38 °C/W), low leakage (5 µA @ 3000 V), and hermetic S-package construction details critical for high-voltage design validation.
Technical Context
This discrete silicon rectifier operates with standard recovery time (non-fast, non-ultrafast), optimized for stable DC output under high-voltage, low-frequency (50/60 Hz) rectification. Its triple-layer passivation and tungsten slug construction ensure radiation hardness and thermal stability across –65 °C to +175 °C junction temperature range.
The device exhibits 5.0 V max forward voltage at 250 mA, 5 µA max reverse leakage at VRWM = 3000 V and 25 °C, and 14 A non-repetitive surge current capability (8.3 ms sine half-cycle), supporting robust operation in pulsed high-power systems like radar modulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3000 V - Maximum continuous peak reverse voltage sustainable across full operating temperature range without breakdown. |
| IO @ 55 °C | 0.25 A - Average rectified forward current deliverable with natural convection cooling at 55 °C ambient. |
| VF @ 250 mA | 5.0 V - Forward voltage drop defining conduction loss and thermal dissipation in high-voltage series configurations. |
| IR @ VRWM | 5 µA @ 25 °C - Ultra-low reverse leakage enabling stable blocking in high-impedance, high-voltage bias networks. |
| RθJL | 38 °C/W - Junction-to-lead thermal resistance measured with 10 mm lead length, critical for heatsinking via PCB copper or chassis mounting. |
| TJ Range | –65 °C to +175 °C - Extended junction temperature capability supporting operation in aerospace, downhole, and military environmental envelopes. |
| IZSM | 14 A - Non-repetitive surge current rating (8.3 ms half-sine) for handling line transients and capacitor charging spikes. |
Pinout & Package
Hermetically sealed voidless hard glass S-package with axial leads; cathode indicated by band; case constructed with tungsten slugs for mechanical robustness and low thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to AC input or transformer secondary; must withstand full surge current and steady-state forward drop. |
| Cathode | Forward current exit terminal | Marked with band; connected to load or filter capacitor; carries full rectified DC current and defines polarity of output rail. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and gas migration, ensuring long-term reliability in vacuum, humidity, and thermal cycling environments. |
| Triple-layer passivation | Provides enhanced surface insulation and contamination resistance, critical for high-voltage surface leakage suppression. |
| JAN/JANTX qualification per MIL-PRF-19500/279 | Validated screening including burn-in, temperature cycling, and parametric testing for mission-critical defense electronics. |
| Lowest reverse leakage in class | 5 µA @ 3000 V enables stable biasing in high-impedance multiplier stacks and precision HV reference circuits. |
| Inherent radiation hardness | Documented per Microsemi MicroNote 050; suitable for space-qualified and nuclear instrumentation applications without derating. |
Applications
| Radar Transmitter Modulators | X-Ray Generator Power Supplies |
|---|---|
Use Scenario: High-voltage pulsing in magnetron or klystron driver stages requiring stable DC bias up to 3 kV. IC Role / Device Role / Timing Role: High-voltage standard recovery rectifier in voltage-doubling or Cockcroft-Walton multiplier chains. Use Value: 3000 V VRWM and 14 A IZSM enable reliable pulse charging of modulator capacitors without avalanche failure. |
Use Scenario: Generating 40–150 kV DC from AC mains via multi-stage voltage multiplication. IC Role / Device Role / Timing Role: Series-connected rectifier in ladder-type multiplier stacks where low leakage prevents voltage droop between stages. Use Value: 5 µA max IR at 3000 V ensures minimal current loss across dozens of series diodes, preserving output regulation. |
| Military Communication Transceivers | High-Reliability Industrial HV Power Supplies |
Use Scenario: RF power amplifier anode supply in HF/VHF tactical radios operating in extreme temperature and shock environments. IC Role / Device Role / Timing Role: Primary rectifier in transformer-isolated HV secondary winding, directly mounted to chassis for thermal management. Use Value: –65 °C to +175 °C TJ range and MIL-qualified screening ensure uninterrupted operation during rapid thermal transients and vibration. |
Use Scenario: Continuous-duty DC output for electrostatic precipitators, mass spectrometers, or laser pumping systems. IC Role / Device Role / Timing Role: Main rectifier in bridge configuration delivering 0.25 A average current at elevated ambient temperatures (up to 100 °C). Use Value: 0.10 A IO rating at 100 °C allows sustained operation in enclosed cabinets without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage standard recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3646 | 2500 V VRWM, 1750 V VR, same package and thermal specs | Suitable for 2.5 kV systems; lower voltage margin than 1N3647A in 3 kV designs | Select when system peak reverse stress is ≤2500 V and cost optimization is prioritized over margin. |
| 1N4007G | 1000 V VRWM, 1 A IO, plastic DO-41 package, commercial grade only | Lacks hermeticity, MIL qualification, radiation hardness, and high-temperature capability | Acceptable only for non-critical, low-reliability 1 kV applications with no environmental or lifetime requirements. |
Compared with 1N3646 and 1N4007G, the 1N3647A provides unique combination of 3000 V blocking, MIL-PRF-19500/279 qualification, and –65 °C to +175 °C operation-making it irreplaceable in radar, X-ray, and aerospace systems where failure is not an option.
Availability
1N3647A is available at Aetrix Electronics and suitable for radar transmitters, X-ray generator power supplies, and military communication transceivers requiring stable component supply, long-term obsolescence management, and traceable MIL-spec sourcing.
Supply support for 1N3647A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for aerospace, defense, and industrial markets.
The 1N3647A belongs to Microsemi's legacy MIL-qualified high-voltage rectifier family, engineered specifically for mission-critical power conversion where hermetic sealing, radiation tolerance, and extended temperature performance are mandatory.
FAQ
What is the maximum working peak reverse voltage rating for the 1N3647A?
The 1N3647A has a working peak reverse voltage (VRWM) rating of 3000 V, specified across its full operating temperature range of –65 °C to +175 °C. This value represents the highest repetitive peak voltage the 1N3647A can block continuously without breakdown under normal operating conditions, and is distinct from its 2100 V DC reverse voltage (VR) rating.
Is the 1N3647A qualified to MIL-PRF-19500/279, and what levels are available?
Yes, the 1N3647A is qualified to MIL-PRF-19500/279 at both JAN and JANTX reliability levels. These qualifications include rigorous screening such as temperature cycling, burn-in, and parametric testing. The "A" suffix in 1N3647A denotes JAN-level compliance, confirming full adherence to military specification requirements for high-reliability applications.
What is the forward voltage drop of the 1N3647A, and at what test condition is it specified?
The 1N3647A has a maximum forward voltage (VF) of 5.0 V, measured at a forward current of 250 mA and 25 °C. This parameter directly impacts conduction losses and thermal design-especially critical in high-voltage multiplier stacks where cumulative VF across multiple series diodes affects overall efficiency and heat generation.
Does the 1N3647A have radiation hardness, and is documentation available?
Yes, the 1N3647A exhibits inherent radiation hardness due to its silicon die construction and hermetic packaging, as documented in Microsemi MicroNote 050. This characteristic makes the 1N3647A suitable for use in space-qualified instruments, nuclear monitoring equipment, and other ionizing radiation environments without additional shielding or derating.
What package type and marking does the 1N3647A use?
The 1N3647A uses a hermetically sealed voidless hard glass S-package with axial leads and tungsten slugs. Polarity is marked by a cathode band on the glass body, and the full part number "1N3647A" is laser-marked or etched on the case. Lead finish is tin/lead unless RoHS-compliant (e3) version is specified.
1N3647A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- S, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 2100 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 5 V @ 250 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 5 µA @ 21000 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- S, Axial
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N3647A FAQ
1.How can I place an order for 1N3647A through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3647A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3647A reliable?
The price and inventory of 1N3647A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3647A is usually 5 days.
3.What payment methods are accepted for 1N3647A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3647A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3647A?
1N3647A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3647A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3647A?
For technical support, including 1N3647A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3647A requirements.
6.How does Aetrix verify that 1N3647A is sourced from the original manufacturer or authorized distributors?
All 1N3647A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3647A meets industry standards.
7.What is the process for return or replacement of 1N3647A?
All 1N3647A units undergo pre-shipment inspection (PSI). If there is an issue with 1N3647A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3647A part is unused and in its original packaging.
Return procedure for 1N3647A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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