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Microchip Technology 1N3649
- Part No.:
- 1N3649
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-203AA, DO-4, Stud
- Datasheet:
-
1N3649.pdf
- Description:
- DIODE GEN PURP 800V DO203AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,895
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Product details
Overview
1N3649 from Microsemi is a high-reliability glass-passivated power rectifier diode rated for 800 V peak repetitive reverse voltage (VRRM), 3.3 A average forward current at TC = 150°C, and 25 A surge current (IFSM). It features glass-to-metal seal construction and operates from –65°C to +150°C case temperature, used in military-grade DC power supplies and high-stress industrial rectification circuits.
For engineers reviewing the 1N3649 datasheet, 1N3649 pinout, 1N3649 application, or 1N3649 equivalent, key selection considerations include its DO-203AA (DO-4) stud-mount package, 2.2 V forward voltage at 10 A, 5 µA reverse leakage at 800 V/25°C, thermal resistance of 2.0°C/W, and MIL-PRF-19500/260 qualification.
Technical Context
This device is a single-junction, axial-leaded, stud-mounted silicon rectifier optimized for high-voltage, medium-current DC output stages where reliability under thermal cycling and mechanical stress is critical. Its glass-passivated die and hermetic glass-to-metal seal ensure long-term stability in aerospace and defense power systems.
The 1N3649 operates with a maximum junction temperature of 150°C and exhibits low reverse leakage (≤5 µA @ 800 V, 25°C; ≤200 µA @ 800 V, 150°C), enabling use in high-temperature environments without derating penalties beyond specified thermal resistance (Rθjc = 2.0°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 800 V - Maximum repetitive reverse blocking voltage before breakdown; defines usable DC bus voltage headroom in rectifier designs. |
| IF(AV) | 3.3 A at TC = 150°C - Continuous forward current capability when case is actively heatsinked to 150°C; sets minimum heatsink requirement. |
| IFSM | 25 A (8.3 ms half-sine) - Surge withstand rating for line transients or inrush events; supports robust input stage protection. |
| VF | 2.2 V @ IF = 10 A, Tj = 25°C - Forward conduction loss at rated load; determines power dissipation (22 W at 10 A) and thermal design margin. |
| Rθjc | 2.0°C/W - Junction-to-case thermal resistance; enables direct calculation of junction temperature rise above heatsink temperature. |
| IR | 5 µA @ VR = 800 V, Tj = 25°C - Low reverse leakage ensures minimal standby power loss and stable voltage hold-off in high-impedance circuits. |
Pinout & Package
Package: DO-203AA (DO-4), stud-mounted, glass-to-metal sealed, anode-connected to metal case (stud), cathode via axial lead. Hermetically sealed for MIL-PRF-19500/260 compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Positive input terminal | Electrically connected to metal case; must be isolated from chassis unless circuit requires common-anode configuration. |
| Cathode (Lead) | Negative output terminal | Axial tinned copper wire; solderable or lug-attachable; carries full forward current and reverse blocking potential. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated die | Eliminates surface contamination sensitivity and improves long-term parameter stability under humidity and thermal stress. |
| Glass-to-metal seal construction | Provides hermeticity per MIL-PRF-19500/260, ensuring zero moisture ingress and immunity to outgassing in vacuum environments. |
| 25 A surge rating (8.3 ms) | Withstands AC line surges and capacitor-input filter inrush without degradation, reducing need for external snubbers. |
| –65°C to +150°C operating range | Supports deployment in extreme ambient conditions including space-grade thermal cycling and engine-bay mounted power supplies. |
Applications
| Military Power Supply Rectification | Aerospace DC Bus Conditioning |
|---|---|
Use Scenario: High-reliability AC-to-DC conversion in airborne radar transmitter power supplies requiring >10-year field life. IC Role / Device Role / Timing Role: Main high-voltage rectifier in full-wave bridge or center-tap configuration, converting 400 Hz aircraft AC to regulated DC. Use Value: Glass-to-metal seal and MIL-PRF-19500/260 qualification ensure zero failure-in-field under vibration, shock, and thermal cycling per MIL-STD-810. | Use Scenario: DC bus hold-up and filtering in satellite power distribution units exposed to radiation and vacuum. IC Role / Device Role / Timing Role: Output-stage rectifier in redundant DC-DC converter modules feeding avionics subsystems. Use Value: 200 µA max reverse leakage at 150°C prevents excessive standby drain in battery-backed systems during extended orbital eclipse periods. |
| Industrial Motor Drive Snubber Diodes | High-Temperature Test Equipment Power Stages |
Use Scenario: Freewheeling and clamping paths in IGBT-based variable-frequency drives operating in foundry or oilfield environments. IC Role / Device Role / Timing Role: Fast-recovery-capable (implied by low Qrr in family context) clamp diode across motor windings or DC link capacitors. Use Value: 2.0°C/W Rθjc allows direct mounting to shared heatsinks without thermal runaway risk during sustained 150°C ambient operation. | Use Scenario: Precision DC power supplies in semiconductor wafer probe stations requiring stable output under 125°C chamber temperatures. IC Role / Device Role / Timing Role: Input rectifier in linear-regulated bench supplies where low IR and tight VF tolerance minimize output ripple and drift. Use Value: 5 µA IR at 800 V/25°C ensures negligible error contribution to microamp-level load regulation specifications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability power rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N3649R | Reversed polarity: anode on lead, cathode on stud - opposite terminal assignment vs. 1N3649. | Requires PCB or heatsink layout inversion; not interchangeable without mechanical redesign. | Select only when circuit topology mandates cathode-grounded (common-cathode) rectifier configuration. |
| 1N3650 | Higher VRRM (1000 V); identical package, thermal, and surge specs; otherwise electrically matched. | Used where higher DC bus voltage margin is required (e.g., 700 V nominal systems), with no change to thermal or mechanical design. | Drop-in replacement if 1000 V rating is needed; verify system overvoltage protection remains adequate. |
Compared with 1N3649R, the 1N3649 offers standard anode-stud polarity for conventional common-anode layouts; compared with 1N3650, it trades 200 V blocking margin for tighter voltage tolerance and potentially lower cost in 800 V-class systems.
Availability
1N3649 is available at Aetrix Electronics and suitable for military power supplies, aerospace DC bus conditioning, and high-temperature industrial motor drive applications requiring stable component supply across extended production lifecycles.
Supply support for 1N3649 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and discrete components.
The 1N3649 belongs to Microsemi's MIL-PRF-19500/260-qualified high-reliability rectifier product line, designed specifically for mission-critical power conversion in defense, aerospace, and nuclear instrumentation systems.
FAQ
What is the maximum junction temperature rating for the 1N3649?
The 1N3649 has a maximum junction temperature (Tj) of +150°C, consistent with its rated average forward current (IF = 3.3 A) at TC = 150°C and thermal resistance Rθjc = 2.0°C/W. This rating is validated under MIL-PRF-19500/260 test conditions and applies to continuous operation when the case is maintained at or below 150°C via heatsinking.
Is the 1N3649 RoHS compliant?
The 1N3649 is not RoHS compliant, as it is manufactured to MIL-PRF-19500/260 specifications which permit leaded glass frit and other legacy materials essential for hermetic sealing and high-reliability performance. Microsemi documents this non-RoHS status explicitly in the T4-LDS-0135 datasheet revision history.
Does the 1N3649 have a specified reverse recovery time (trr)?
No, the official Microsemi T4-LDS-0135 datasheet for the 1N3649 does not specify reverse recovery time (trr). The device is characterized as a general-purpose power rectifier-not a fast- or ultrafast-recovery type-and its primary specification focus is on VRRM, IF, IFSM, VF, and IR under MIL-qualified conditions.
Can the 1N3649 be used in parallel configurations?
Parallel operation of the 1N3649 is not recommended without individual current-sharing resistors or active balancing, due to inherent VF mismatch between units. The datasheet provides no derating guidance or characterization for paralleling, and MIL-PRF-19500/260 qualification applies only to single-device testing.
What does the "R" suffix mean in related part numbers like 1N3649R?
The "R" suffix in 1N3649R indicates reversed polarity: the cathode is connected to the metal stud and the anode to the axial lead-opposite of the standard 1N3649. This is documented in Note 10 of the T4-LDS-0135 package drawing and confirmed in the device table on page 1 of the datasheet.
1N3649 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-203AA, DO-4, Stud
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 800 V
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- 2.2 V @ 10 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 5 µA @ 800 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Stud Mount
- Supplier Device Package:
- DO-203AA (DO-4)
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N3649 FAQ
1.How can I place an order for 1N3649 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N3649 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N3649 reliable?
The price and inventory of 1N3649 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N3649 is usually 5 days.
3.What payment methods are accepted for 1N3649?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N3649 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N3649?
1N3649 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N3649 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N3649?
For technical support, including 1N3649 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N3649 requirements.
6.How does Aetrix verify that 1N3649 is sourced from the original manufacturer or authorized distributors?
All 1N3649 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N3649 meets industry standards.
7.What is the process for return or replacement of 1N3649?
All 1N3649 units undergo pre-shipment inspection (PSI). If there is an issue with 1N3649, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N3649 part is unused and in its original packaging.
Return procedure for 1N3649:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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