Taiwan Semiconductor Corporation 1N4001G R1G

Overview

1N4001G from Taiwan Semiconductor is a glass-passivated silicon standard rectifier diode rated for 1 A average forward current and 50 V repetitive peak reverse voltage, with 30 A surge capability and 1.0 V max forward voltage at 1 A - used in low-voltage DC-DC converters and general-purpose AC/DC front-end rectification.

For engineers reviewing the 1N4001G datasheet, 1N4001G pinout, 1N4001G application, or 1N4001G equivalent, key selection criteria include its DO-41 package compatibility, AEC-Q101 qualification option (1N4001GH), junction temperature range (−55°C to +150°C), and verified 5 µA max reverse leakage at 25°C.

Technical Context

This single-die, axial-leaded rectifier operates as a unidirectional current switch with a PN junction optimized for low conduction loss and high surge tolerance. Its glass-passivated chip structure ensures stable reverse blocking and long-term reliability under thermal cycling.

The device exhibits 10 pF typical junction capacitance at 1 MHz and 4 V reverse bias, supporting moderate-speed switching up to ~10 kHz in non-critical rectifier applications. Thermal resistance from junction-to-ambient is 80°C/W in free-air conditions, limiting continuous power dissipation to ~1.5 W without heatsinking.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41), axial leaded, epoxy-molded case with cathode band marking. Leads are pure tin-plated, J-STD-002 solderable, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier diode applications.

Compared with 1N4001G, the ON Semiconductor 1N4001 offers lower cost but lacks AEC-Q101 support, while the Vishay 1N4001-T matches performance but omits halogen-free certification - making 1N4001G preferred for automotive-qualified and green-compliance designs.

Availability

1N4001G is available at Aetrix Electronics and suitable for AC/DC adapters, industrial control power supplies, and automotive auxiliary modules requiring stable component supply across multi-year production cycles.

Supply support for 1N4001G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and automotive markets since 1979.

The 1N4001G belongs to TSC's standard rectifier family designed for cost-sensitive, high-reliability AC/DC conversion - emphasizing robustness, manufacturability, and compliance with international environmental standards.

FAQ

What is the maximum junction temperature rating for the 1N4001G?

The 1N4001G has a maximum junction temperature (TJ MAX) of +150°C, allowing reliable operation in high-ambient environments such as enclosed industrial power supplies. This rating is maintained across its full operating range from −55°C to +150°C storage temperature. Derating is required above 70°C ambient due to its 80°C/W junction-to-ambient thermal resistance. The 1N4001G must be mounted with adequate airflow or thermal relief to avoid exceeding TJ MAX under full 1 A load.

Is the 1N4001G suitable for automotive applications?

The base 1N4001G is not AEC-Q101 qualified, but Taiwan Semiconductor offers the 1N4001GH variant - identical in all electrical and mechanical specifications except for full AEC-Q101 stress testing and halogen-free compliance. For automotive auxiliary power modules or under-hood applications, engineers should specify 1N4001GH. The 1N4001G remains appropriate for non-automotive industrial or consumer systems where qualification is not required.

What does the 'G' suffix in 1N4001G indicate?

The 'G' suffix in 1N4001G denotes Taiwan Semiconductor's green-compliant packaging: lead-free terminations, halogen-free molding compound per IEC 61249-2-21, and RoHS compliance. It does not indicate AEC-Q101 qualification - that requires the additional 'H' suffix (e.g., 1N4001GH). The 'G' also identifies the DO-41 package and glass-passivated die construction, distinguishing it from older metallurgically bonded variants.

How does the 1N4001G compare to the 1N4007G in terms of reverse voltage capability?

The 1N4001G is rated for 50 V repetitive peak reverse voltage (VRRM), whereas the 1N4007G is rated for 1000 V. Both share identical forward characteristics (1 A IF, 30 A IFSM, 1.0 V VF), thermal specs, and DO-41 packaging. Substituting 1N4001G for 1N4007G is unsafe in >50 V reverse-bias applications - such as primary-side rectification - due to risk of catastrophic breakdown. Always match VRRM to circuit peak reverse stress.

What is the reverse leakage current specification for the 1N4001G at elevated temperature?

The 1N4001G specifies a maximum reverse current (IR) of 100 µA at 125°C and rated reverse voltage - significantly higher than its 5 µA max at 25°C. This exponential increase reflects intrinsic semiconductor behavior and must be accounted for in high-temperature designs, such as sealed power supplies or engine bay electronics. At 125°C, the 1N4001G's leakage may affect hold-up time or bias network accuracy if downstream impedance is >100 kΩ.