Taiwan Semiconductor Corporation 1N4005GH

Overview

1N4005GH from Taiwan Semiconductor is a glass-passivated silicon standard rectifier diode rated for 1 A average forward current and 600 V repetitive peak reverse voltage, with 30 A surge capability and 1.0 V max forward voltage at 1 A, used in DC-DC converters and switching inverters.

For engineers reviewing the 1N4005GH datasheet, 1N4005GH pinout, 1N4005GH application, or 1N4005GH equivalent, key selection criteria include VRRM=600 V, IFSM=30 A, VF≤1.0 V @1A, TJmax=150°C, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This single-die DO-41 rectifier operates as a unidirectional power conversion device with glass-passivated junction for moisture resistance and thermal stability. Its 80°C/W junction-to-ambient thermal resistance and 10 pF junction capacitance support reliable operation in high-frequency switching topologies up to 1 MHz.

The device meets JESD201 Class 2 whisker resistance and UL 94V-0 flammability requirements, with pure tin-plated leads compliant with J-STD-002 solderability standards - critical for automotive and industrial reflow assembly processes.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41) axial-leaded through-hole package with cathode band marking; 0.330 g mass; UL 94V-0 molding compound; pure tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH1R06 and 1N4005G, the 1N4005GH uniquely combines automotive qualification, low VF, and proven surge robustness - making it optimal for safety-critical 12/24 V systems where reliability outweighs ultra-fast switching needs.

Availability

1N4005GH is available at Aetrix Electronics and suitable for automotive power supplies, industrial DC-DC converters, and AC-DC adapter input stages requiring stable component supply and long-term lifecycle assurance.

Supply support for 1N4005GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The 1N400xG series targets cost-effective, high-reliability rectification in power conversion systems - designed specifically for applications demanding AEC-Q101 compliance, thermal resilience, and consistent surge performance.

FAQ

What is the peak repetitive reverse voltage rating for the 1N4005GH?

The 1N4005GH has a repetitive peak reverse voltage (VRRM) rating of 600 V. This value defines the maximum instantaneous reverse voltage the diode can block repeatedly without entering avalanche breakdown. It is measured under standard test conditions per JEDEC specifications and provides design margin for transient overvoltage events in 120/240 VAC-derived supplies and automotive load-dump scenarios. The 1N4005GH maintains this rating across its full operating temperature range.

Is the 1N4005GH suitable for automotive applications?

Yes, the 1N4005GH is AEC-Q101 qualified, meaning it has passed stress tests for temperature cycling, humidity bias, mechanical shock, and high-temperature operating life required for automotive electronic components. Its 150°C maximum junction temperature, glass-passivated junction, and JESD201 Class 2 whisker resistance make it appropriate for under-hood and cabin-mounted systems. The 1N4005GH is explicitly intended for automotive power supply rectification where reliability under harsh environmental conditions is mandatory.

What does the 'H' suffix in 1N4005GH signify?

The 'H' suffix in 1N4005GH indicates AEC-Q101 qualification per Taiwan Semiconductor's ordering nomenclature. It distinguishes this version from the standard 1N4005G, which shares identical electrical and mechanical specifications but lacks automotive-grade reliability validation. The 'H' variant undergoes additional screening and lot-level testing to ensure compliance with automotive stress requirements, and it is packaged in tape-and-reel (5,000 units) for automated assembly. The 1N4005GH is not a different die - it is the same device with enhanced process control and qualification.

What is the forward voltage drop of the 1N4005GH at rated current?

The 1N4005GH exhibits a maximum forward voltage (VF) of 1.0 V at 1 A forward current and 25°C junction temperature, per its electrical specifications. This value is measured using a pulse test (0.3 ms pulse width) to minimize self-heating effects. At elevated temperatures (e.g., 125°C), VF decreases slightly due to semiconductor physics, but system-level thermal design must account for worst-case conduction loss at room temperature. The 1N4005GH's low VF contributes directly to reduced power dissipation compared to older 1N400x variants.

Does the 1N4005GH have a defined junction capacitance value?

Yes, the 1N4005GH has a typical junction capacitance (CJ) of 10 pF, measured at 1 MHz and 4.0 V reverse bias. This parameter influences high-frequency switching behavior, EMI generation, and snubber design in flyback or forward converters. While not optimized for RF applications, this capacitance level is consistent with standard recovery rectifiers and supports reliable operation in 20–100 kHz power conversion topologies. The 1N4005GH's CJ remains stable across its rated voltage range and contributes to predictable turn-off characteristics.