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Microchip Technology 1N4149-1
- Part No.:
- 1N4149-1
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4149-1.pdf
- Description:
- DIODE GEN PURP 75V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:5,634
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Product details
Overview
1N4149-1 from Microsemi is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 (DO-204AH) package, rated for 75 V peak reverse voltage, 200 mA average forward current, and 4 ns reverse recovery time, used in high-speed data line switching and RS-232/RS-422 interface networks.
For engineers reviewing the 1N4149-1 datasheet, 1N4149-1 pinout, 1N4149-1 application, or 1N4149-1 equivalent, key selection criteria include verified reverse recovery time (trr = 4 ns), low junction capacitance (CJ = 4 pF at 0 V), MIL-PRF-19500 screening availability, RoHS-compliant variants, and DO-35 mechanical compatibility with legacy through-hole layouts.
Technical Context
The 1N4149-1 employs internal metallurgical bonding and double-plug glass construction to achieve stable high-frequency performance and thermal robustness across -65 °C to +150 °C junction temperature range. Its hermetic sealing ensures long-term reliability in mission-critical switching roles where moisture ingress or parameter drift must be avoided.
Designed for fast transient response, the device delivers consistent 4 ns reverse recovery time under 10 mA test conditions and maintains ≤4 pF junction capacitance at 0 V bias-enabling clean signal edge integrity in Ethernet 10 Base-T and magnetic core driver circuits without added snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRWM) | 75 V - supports DC blocking in 5–24 V logic-level interfaces without breakdown risk |
| Reverse Recovery Time (trr) | 4 ns - enables reliable operation up to ~100 MHz switching in data line applications |
| Junction Capacitance (CJ) | 4 pF @ 0 V - minimizes signal loading on high-impedance RS-232 receivers and thin-film memory lines |
| Average Forward Current (IO) | 200 mA - sufficient for driving TTL/CMOS inputs and small-signal relay coils |
| Forward Voltage (VF) | 1.0 V @ 10 mA - low conduction loss preserves noise margin in multi-diode logic arrays |
| Operating Junction Temp | -65 °C to +150 °C - qualified for aerospace, industrial control, and extended-temperature computing |
Pinout & Package
1N4149-1 is housed in a hermetically sealed DO-35 (DO-204AH) glass axial package with cathode indicated by a single band. Terminals are tin/lead plated or RoHS-compliant matte-tin over copper-clad steel, solderable per MIL-STD-750 Method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential side of circuit; enables conduction when biased >0.7 V above cathode |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Band identifies polarity for correct orientation in series-switching or clamping configurations |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Prevents moisture-induced parameter shift and corrosion in humid or sealed enclosures |
| Metallurgical bonding | Ensures low thermal resistance and stable trr/CJ performance across temperature cycling |
| Double-plug DO-35 construction | Provides mechanical stability and repeatable lead alignment for automated through-hole insertion |
| MIL-PRF-19500 screening option | Enables use in defense/aerospace programs requiring tested lot traceability and burn-in validation |
Applications
| RS-232 Interface Protection | Ethernet 10 Base-T Line Clamping |
|---|---|
Use Scenario: Protecting UART transceivers from ESD and line reflections in industrial serial links. IC Role / Device Role / Timing Role: Fast-switching clamping diode placed between TX/RX lines and ground/VCC rails. Use Value: 4 ns trr and 4 pF CJ prevent signal distortion while absorbing ±8 kV HBM transients without latch-up. |
Use Scenario: Signal conditioning and surge suppression on unshielded twisted-pair PHY connections. IC Role / Device Role / Timing Role: Low-capacitance steering diode in receiver input protection network. Use Value: Sub-4 pF junction capacitance avoids bandwidth degradation in 10 Mbps baseband signaling. |
| Magnetic Core Memory Drivers | High-Density Logic-Level Translation |
Use Scenario: Driving current pulses into ferrite cores for legacy memory addressing and read/write cycles. IC Role / Device Role / Timing Role: High-speed switching element in pulse-forming networks with tight timing windows. Use Value: Consistent 4 ns trr ensures precise pulse edge placement and minimal tail current in core excitation. |
Use Scenario: Level-shifting and isolation between mixed-voltage logic families (e.g., 5 V → 3.3 V). IC Role / Device Role / Timing Role: Passive OR-ing or signal gating diode in discrete logic interconnects. Use Value: 1.0 V VF at 10 mA enables predictable voltage drop and minimal propagation delay skew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4151-1 | Same VRWM (75 V), but trr = 2 ns and IR = 50 nA @ VR (vs. 20 nA for 1N4149-1) | Better suited for ultra-high-speed sampling gates where sub-3 ns recovery is critical | Select 1N4151-1 only if trr < 3 ns is required; otherwise 1N4149-1 offers tighter IR spec and identical packaging |
| 1N4448-1 | Same VRWM (75 V), trr = 4 ns, but VF = 1.0 V @ 100 mA (vs. 1.0 V @ 10 mA for 1N4149-1); CJ = 4 pF | Higher forward current capability supports higher-drive logic buffers and relay drivers | Choose 1N4448-1 when IO > 100 mA is needed; 1N4149-1 remains optimal for low-current, low-leakage signal routing |
Compared with 1N4151-1 and 1N4448-1, the 1N4149-1 provides the lowest reverse leakage (20 nA @ VR) among the three while maintaining identical 4 ns trr and DO-35 footprint-making it preferred for precision analog switching and low-power data line protection where leakage-induced offset must be minimized.
Availability
1N4149-1 is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10 Base-T clamping, and magnetic core memory driver applications requiring stable component supply, long-lifecycle support, and MIL-PRF-19500 screening options.
Supply support for 1N4149-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N4149-1 belongs to Microsemi's legacy JEDEC-registered switching diode family, engineered specifically for high-speed, low-leakage signal routing in military-grade and extended-temperature computing systems.
FAQ
What is the maximum reverse recovery time (trr) specification for 1N4149-1?
The 1N4149-1 has a guaranteed maximum reverse recovery time of 4 ns when tested at 10 mA forward current and specified reverse bias conditions. This value is confirmed in the Electrical Characteristics table on page 2 of T4-LDS-0239 Rev. 1 and reflects the device's suitability for high-speed digital switching applications such as RS-232 line protection and Ethernet 10 Base-T signal conditioning. The 1N4149-1 maintains this trr consistently across its qualified temperature range.
Does 1N4149-1 meet MIL-PRF-19500 requirements?
Yes, the 1N4149-1 is available with screening options compliant with MIL-PRF-19500, as explicitly stated in the "Screening in reference to MIL-PRF-19500 available" line on page 1 of T4-LDS-0239 Rev. 1. Screening levels (e.g., JAN, JANTX) are encoded in the full part number nomenclature-such as MQ 1N4149-1 for JAN-grade-and require ordering with appropriate suffixes. Standard commercial 1N4149-1 is not automatically screened unless specified.
What is the junction capacitance (CJ) of 1N4149-1 and why does it matter?
The 1N4149-1 exhibits a junction capacitance of 4 pF at 0 V reverse bias, as measured and published in the Electrical Characteristics table. This low capacitance minimizes signal loading on high-impedance nodes-critical in RS-232 receivers, thin-film memory address lines, and Ethernet PHY inputs-where excessive capacitance would degrade rise/fall times or cause crosstalk. The 4 pF value is consistent across the 1N4149-1, 1N4151-1, and 1N4446–49 series.
Is 1N4149-1 RoHS compliant?
Yes, RoHS-compliant versions of 1N4149-1 are available, indicated by the "e3" suffix in the part nomenclature (e.g., 1N4149-1e3). Per the "PART NOMENCLATURE" section on page 2 of T4-LDS-0239 Rev. 1, "e3" denotes RoHS compliance with matte-tin plating, while blank denotes non-RoHS tin/lead termination. Both versions share identical electrical and mechanical specifications except for plating composition.
What package type is used for 1N4149-1 and how is polarity marked?
The 1N4149-1 uses the DO-35 (also designated DO-204AH) hermetically sealed glass axial package. Polarity is marked by a single cathode band near one end of the glass body, as confirmed in the "MECHANICAL and PACKAGING" section on page 2 of T4-LDS-0239 Rev. 1. Leads are tin/lead or RoHS-compliant matte-tin plated, and the device weighs 0.2 grams. Dimensions conform to JEDEC standards with BD = 1.40–2.29 mm and BL = 3.05–5.08 mm.
1N4149-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 25 nA @ 20 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 200°C
1N4149-1 FAQ
1.How can I place an order for 1N4149-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4149-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4149-1 reliable?
The price and inventory of 1N4149-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4149-1 is usually 5 days.
3.What payment methods are accepted for 1N4149-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4149-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4149-1?
1N4149-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4149-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4149-1?
For technical support, including 1N4149-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4149-1 requirements.
6.How does Aetrix verify that 1N4149-1 is sourced from the original manufacturer or authorized distributors?
All 1N4149-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4149-1 meets industry standards.
7.What is the process for return or replacement of 1N4149-1?
All 1N4149-1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4149-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4149-1 part is unused and in its original packaging.
Return procedure for 1N4149-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4149-1 Tags
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