My Inquiry
My Account
Microchip Technology 1N4150
- Part No.:
- 1N4150
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4150.pdf
- Description:
- DIODE GEN PURP 50V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:4,420
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N4150 from Microsemi is a hermetically sealed, metallurgically bonded switching diode in DO-35 glass package, rated for 50 V reverse voltage, 200 mA forward current, and 4 A surge (1 µs), used in military-grade timing, clamping, and waveform shaping circuits operating from –65°C to +175°C.
For engineers reviewing the 1N4150 datasheet, 1N4150 pinout, 1N4150 application, or 1N4150 equivalent, key selection criteria include its MIL-PRF-19500/231 JANTXV qualification, 4 ns reverse recovery time, 2.5 pF junction capacitance, thermal resistance of 250°C/W, and compatibility with high-reliability aerospace and defense power control designs.
Technical Context
The 1N4150 is a silicon planar epitaxial switching diode fabricated using double-plug construction and metallurgical bonding to ensure low leakage and stable high-temperature operation. Its hermetic DO-35 glass package meets MIL-PRF-19500/231 requirements for JAN, JANTX, and JANTXV screening levels.
It delivers fast switching performance with TRR ≤ 4 ns at IF = IR = 10 mA and IRec = 1 mA, VF ≤ 1.00 V at 200 mA, and VRWM = 50 V, making it suitable for pulse conditioning and high-speed logic interface protection in harsh-environment systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VRWM) | 50 V - Maximum DC blocking voltage before significant leakage or breakdown in normal operation. |
| Forward Current (IF) | 200 mA @ TA = +25°C to +75°C - Continuous conduction capability without derating. |
| Reverse Recovery Time (TRR) | ≤ 4 ns - Enables use in >10 MHz switching applications such as pulse shaping and digital signal routing. |
| Junction Capacitance (CJ) | ≤ 2.5 pF @ 0 V - Minimizes signal distortion and loading in RF and high-speed digital interfaces. |
| Surge Current (1 µs) | 4.0 A - Withstands transient overcurrent events common in inductive load switching and ESD protection paths. |
| Operating Temperature | –65°C to +175°C - Supports deployment in engine bays, avionics bays, and downhole instrumentation without derating. |
| Thermal Resistance (RθJL) | 250°C/W max @ L = 0.375″ - Defines heat transfer limit from junction to lead; critical for thermal design in sealed enclosures. |
Pinout & Package
Hermetically sealed DO-35 glass package with axial leads; cathode identified by banding at one end. Lead material: copper-clad steel; finish: tin/lead.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to lower-potential side in forward-biased configuration; must be routed with adequate current-carrying trace width. |
| Cathode | Forward current exit / reverse-blocking terminal | Banded end; connects to higher-potential node during reverse bias; determines polarity-sensitive placement on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/231 Qualified | JAN, JANTX, and JANTXV screening levels confirmed - ensures reliability for flight-critical and mission-essential systems. |
| Metallurgical Bonding | Eliminates interfacial voids and delamination under thermal cycling - improves long-term bond integrity at 175°C. |
| Double-Plug Construction | Reduces series resistance and enhances mechanical stability - supports consistent VF and TRR across temperature extremes. |
| Hermetic Glass Seal | Prevents moisture ingress and corrosion - maintains IR ≤ 0.1 µA at 50 V and 25°C over 20+ year service life. |
Applications
| Aerospace Pulse Conditioning | Defense System Clamping |
|---|---|
Use Scenario: Shaping TTL-compatible trigger pulses in radar pulse modulators subject to wide ambient temperature swings. IC Role / Device Role / Timing Role: Fast-switching clamp diode limiting voltage excursions to protect downstream logic inputs. Use Value: TRR ≤ 4 ns and VF ≤ 0.86 V at 10 mA ensure minimal pulse edge degradation across –65°C to +125°C operational range. |
Use Scenario: Transient suppression on 28 VDC power rails in vehicle-mounted electronic warfare receivers. IC Role / Device Role / Timing Role: Reverse-biased protection element absorbing induced surges up to 4 A (1 µs). Use Value: Hermetic DO-35 package and 50 V VRWM provide stable clamping threshold without parameter drift after thermal shock exposure. |
| Downhole Instrumentation | Avionics Signal Routing |
Use Scenario: Level-shifting and isolation in pressure sensor front-end circuits deployed at 175°C wellbore temperatures. IC Role / Device Role / Timing Role: Forward-conducting switch enabling analog multiplexing in high-temperature ASIC interfaces. Use Value: Operating temperature range up to +175°C and RθJL = 250°C/W allow direct mounting to ceramic substrates without heatsinking. |
Use Scenario: High-fidelity clock signal routing between FPGA and ADC in airborne data acquisition units. IC Role / Device Role / Timing Role: Low-capacitance (≤2.5 pF) steering diode preserving signal rise/fall times below 1 ns. Use Value: Minimal CJ and consistent VF reduce jitter accumulation and maintain timing margin in 100+ MHz sampling paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W | Plastic SOD-123 package; TRR ≤ 4 ns but VRWM = 100 V; not MIL-qualified. | Commercial industrial controls only; unsuitable for flight hardware or extended temperature deployment. | Select when cost and volume matter more than radiation tolerance or –65°C startup capability. |
| 1N914B | DO-35 glass, but only JAN-level screening; VRWM = 75 V; TRR ≤ 5 ns; no JANTXV option. | Limited to non-safety-critical ground support equipment where full MIL-PRF-19500/231 compliance is waived. | Choose only if procurement authority permits reduced screening level and higher VRWM is required. |
Compared with 1N4150, the 1N4148W offers higher VRWM and lower cost but lacks hermeticity and temperature rating; the 1N914B provides similar packaging but omits JANTXV screening and has looser TRR spec - neither matches the 1N4150's combination of MIL-PRF-19500/231 JANTXV qualification, 175°C operation, and 4 ns TRR.
Availability
1N4150 is available at Aetrix Electronics and suitable for aerospace pulse conditioning, defense system clamping, and downhole instrumentation requiring stable component supply under extended temperature and high-reliability constraints.
Supply support for 1N4150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N4150 belongs to Microsemi's legacy MIL-PRF-19500/231 qualified discrete diode family, designed specifically for mission-critical switching, clamping, and protection functions in extreme-temperature and radiation-prone environments.
FAQ
What is the maximum reverse voltage rating for the 1N4150?
The 1N4150 has a DC reverse voltage (VRWM) rating of 50 V, verified per MIL-PRF-19500/231 test conditions at 25°C. This rating remains valid across its full operating temperature range (–65°C to +175°C), with IR held ≤ 0.1 µA at 50 V and 25°C. The 1N4150 must not be operated beyond this voltage in continuous reverse bias without risk of breakdown.
Is the 1N4150 suitable for high-temperature applications like downhole tools?
Yes, the 1N4150 is explicitly rated for operation from –65°C to +175°C and qualified to MIL-PRF-19500/231, making it appropriate for downhole instrumentation. Its hermetic DO-35 package, metallurgical bonding, and thermal resistance of 250°C/W enable reliable function at sustained 175°C junction temperatures without parameter shift or seal failure - a key requirement for oilfield electronics.
Does the 1N4150 have a specified reverse recovery time (TRR)?
Yes, the 1N4150 has a maximum reverse recovery time (TRR) of 4 ns, measured at IF = IR = 10 mA and IRec = 1 mA per MIL-PRF-19500/231. This value is guaranteed across screening levels (JAN/JANTX/JANTXV) and supports use in high-frequency switching applications such as pulse shaping and digital signal conditioning up to ~100 MHz.
What does the "-1" suffix in 1N4150-1 indicate?
The "-1" suffix in 1N4150-1 denotes compliance with MIL-PRF-19500/231 for the 1N4150 device type, confirming that the part meets the specification's electrical, mechanical, environmental, and screening requirements. It is not a revision code or variant identifier - all qualified 1N4150 devices supplied by Microsemi carry the -1 suffix to indicate full specification conformance.
How is polarity marked on the 1N4150 package?
The 1N4150 uses a cathode band marking on its hermetically sealed DO-35 glass body to indicate polarity. The banded end is the cathode terminal, and the unmarked end is the anode. This marking is visible under standard visual inspection and aligns with MIL-PRF-19500/231 mechanical drawing requirements for axial-leaded diodes.
1N4150 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- 2.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4150 FAQ
1.How can I place an order for 1N4150 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4150 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4150 reliable?
The price and inventory of 1N4150 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4150 is usually 5 days.
3.What payment methods are accepted for 1N4150?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4150 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4150?
1N4150 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4150 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4150?
For technical support, including 1N4150 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4150 requirements.
6.How does Aetrix verify that 1N4150 is sourced from the original manufacturer or authorized distributors?
All 1N4150 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4150 meets industry standards.
7.What is the process for return or replacement of 1N4150?
All 1N4150 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4150, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4150 part is unused and in its original packaging.
Return procedure for 1N4150:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4150 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
