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Microchip Technology 1N4150-1/TR
- Part No.:
- 1N4150-1/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4150-1/TR.pdf
- Description:
- DIODE GEN PURP 50V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:6,481
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Product details
Overview
1N4150-1/TR from Microsemi (now Microchip) is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 glass package, rated for 50 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time, used in high-reliability timing, clamping, and signal routing circuits in aerospace and industrial control systems.
For engineers reviewing the 1N4150-1/TR datasheet, 1N4150-1/TR pinout, 1N4150-1/TR application, or 1N4150-1/TR equivalent, key selection factors include its MIL-PRF-19500/231 compliance, 2.5 pF junction capacitance at 0 V, 70°C/W thermal impedance, -65°C to +175°C operating temperature range, and 500 mW total power dissipation under defined lead length conditions.
Technical Context
This diode employs double-plug construction and metallurgical bonding to achieve stable switching performance across extreme temperatures. Its fast 4 ns reverse recovery time (TRR) and low 2.5 pF capacitance support high-frequency signal routing and pulse shaping in analog and digital interface stages.
The DO-35 hermetic glass package with copper-clad steel leads and tin/lead finish ensures long-term reliability in harsh environments. Thermal resistance of 250°C/W (junction-to-lead, L = 0.375") and derating of 2 mA/°C above +75°C define its safe operating area under sustained load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VRWM) | 50 V - Maximum DC blocking voltage before significant leakage or breakdown |
| Forward Current (IF) | 200 mA - Continuous DC current rating at +25°C to +75°C ambient |
| Reverse Recovery Time (TRR) | 4 ns - Time to transition from conduction to blocking state under specified test conditions (IF = IR = 10 mA, IRec = 1 mA) |
| Junction Capacitance (CJ) | 2.5 pF - Small-signal capacitance at 0 V bias, critical for RF and high-speed switching fidelity |
| Thermal Impedance (ZθJX) | 70°C/W - Junction-to-ambient thermal resistance under standard mounting, defining heat dissipation limits |
| Operating Temperature | -65°C to +175°C - Full military-grade temperature range without parameter drift or failure |
| Total Power Dissipation | 500 mW - Maximum steady-state power handling at TA = +25°C with specified lead length |
Pinout & Package
Hermetically sealed DO-35 glass package per MIL-PRF-19500/231; cathode identified by axial band on glass body; leads are copper-clad steel with tin/lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to lower-potential node in forward-biased operation; polarity must align with circuit biasing |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; defines directionality for rectification, clamping, and protection functions |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/231 Qualified | Available in JAN, JANTX, and JANTXV screening levels for defense and space applications |
| Hermetic Glass Encapsulation | Prevents moisture ingress and long-term parameter drift in humid or corrosive environments |
| Metallurgical Bonding | Ensures robust die attachment and low thermal resistance for stable high-temperature operation |
| Double-Plug Construction | Improves mechanical integrity and thermal path consistency between die and leads |
| Fast Switching Performance | 4 ns TRR enables use in >100 MHz pulse circuits and precision waveform shaping |
Applications
| High-Speed Pulse Clamping | Aerospace Signal Conditioning |
|---|---|
Use Scenario: Protecting ADC inputs from ESD-induced overvoltage transients in avionics data acquisition modules. IC Role / Device Role / Timing Role: Fast-switching clamping diode shunting transient energy to ground before it reaches sensitive analog front-end components. Use Value: 4 ns TRR and 2.5 pF capacitance minimize signal distortion while maintaining sub-50 V clamping threshold. | Use Scenario: Level-shifting and waveform sharpening in flight control system serial bus receivers operating at -55°C to +125°C. IC Role / Device Role / Timing Role: Signal routing diode in Schottky-clamped TTL-compatible interface stages requiring guaranteed turn-off speed. Use Value: Stable 50 V VRWM and -65°C to +175°C operation ensure functional integrity across full mission temperature profile. |
| Industrial Timing Reference Circuits | Military Power Supply Snubbing |
Use Scenario: Edge generation in crystal oscillator buffer stages for secure comms timing modules. IC Role / Device Role / Timing Role: High-fidelity waveform shaping element in RC-triggered monostable multivibrators. Use Value: Low 2.5 pF capacitance preserves rise/fall time integrity; 4 ns TRR prevents pulse doubling artifacts. | Use Scenario: RCD snubber network in 28 V DC-DC converter primary-side flyback topologies deployed in armored vehicle electronics. IC Role / Device Role / Timing Role: Transient energy clamp during MOSFET turn-off, limiting voltage overshoot across switching node. Use Value: 500 mW power rating and 250°C/W RθJL enable reliable energy absorption without thermal runaway at 175°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148TR | Higher TRR (4–8 ns typical), same DO-35 package, non-military screening, 75 V VRWM | Lacks MIL-PRF-19500/231 qualification; not suitable for Class H/K environments | Select only for commercial-grade designs where extended temperature and radiation tolerance are not required. |
| 1N5711 | Schottky structure, 0.25 V VF, 70 V VRWM, 100 mA IF, no reverse recovery (TRR = N/A) | Lower forward drop but higher leakage (>10 µA @ 25°C); unsuitable for high-impedance clamping | Prefer when ultra-low VF and zero recovery loss matter more than leakage or reverse blocking stability. |
Compared with 1N4150-1/TR, the 1N4148TR offers higher reverse voltage but lacks military screening and guaranteed 4 ns TRR, while the 1N5711 eliminates recovery loss but sacrifices reverse blocking integrity and temperature stability-making 1N4150-1/TR optimal for high-reliability, wide-temperature switching where precise TRR and hermeticity are mandatory.
Availability
1N4150-1/TR is available at Aetrix Electronics and suitable for aerospace signal conditioning, industrial timing reference circuits, military power supply snubbing, and high-speed pulse clamping requiring stable component supply across extended temperature and lifecycle demands.
Supply support for 1N4150-1/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs and discrete devices for aerospace, defense, and industrial markets.
The 1N4150-1/TR belongs to Microsemi's legacy MIL-qualified discrete diode family, engineered specifically for mission-critical switching, clamping, and protection in environments demanding hermetic sealing, extreme temperature resilience, and certified screening levels.
FAQ
What is the maximum reverse voltage rating for the 1N4150-1/TR?
The 1N4150-1/TR has a DC reverse voltage (VRWM) rating of 50 V, verified per MIL-PRF-19500/231 test conditions. This value represents the maximum continuous reverse-bias voltage the device can block without exceeding specified leakage current limits. Exceeding 50 V may cause premature breakdown, especially at elevated temperatures where IR increases significantly. The 1N4150-1/TR maintains this rating across its full -65°C to +175°C operating range.
Does the 1N4150-1/TR meet military specification requirements?
Yes, the 1N4150-1/TR is manufactured and tested to MIL-PRF-19500/231, with availability in JAN, JANTX, and JANTXV screening levels. These levels include rigorous environmental stress testing, lot traceability, and quality assurance protocols required for defense and space applications. The 1N4150-1/TR's hermetic DO-35 package, metallurgical bonding, and double-plug construction directly support compliance with these specifications.
What is the reverse recovery time (TRR) of the 1N4150-1/TR and how is it measured?
The 1N4150-1/TR has a maximum reverse recovery time (TRR) of 4 ns, measured under standardized conditions: IF = IR = 10 mA, IRec = 1 mA, with specified test fixture layout. This parameter reflects the diode's ability to rapidly transition from forward conduction to reverse blocking, critical for high-frequency switching accuracy. The 1N4150-1/TR achieves this performance via optimized doping profiles and metallurgical bonding, ensuring consistent TRR across temperature extremes.
Can the 1N4150-1/TR be used in high-temperature industrial applications?
Yes, the 1N4150-1/TR is rated for continuous operation from -65°C to +175°C, with full parameter guarantees across that range. Its hermetic glass package and metallurgically bonded die prevent parametric shift due to thermal cycling or moisture ingress. Derating begins at +75°C (2 mA/°C), and thermal impedance remains stable at 70°C/W up to maximum junction temperature-making the 1N4150-1/TR suitable for downhole, engine-control, and enclosed power-conversion applications.
What does the "TR" suffix indicate in the 1N4150-1/TR part number?
The "TR" suffix in 1N4150-1/TR denotes tape-and-reel packaging per EIA-481 standards, intended for automated surface-mount assembly. Although the 1N4150-1/TR uses axial DO-35 leads, the TR variant is supplied in embossed carrier tape with cover tape, enabling pick-and-place compatibility. This packaging format supports high-volume manufacturing while preserving the device's hermetic integrity and MIL-qualified screening status throughout handling and reflow.
1N4150-1/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4150-1/TR FAQ
1.How can I place an order for 1N4150-1/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4150-1/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4150-1/TR reliable?
The price and inventory of 1N4150-1/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4150-1/TR is usually 5 days.
3.What payment methods are accepted for 1N4150-1/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4150-1/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4150-1/TR?
1N4150-1/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4150-1/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4150-1/TR?
For technical support, including 1N4150-1/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4150-1/TR requirements.
6.How does Aetrix verify that 1N4150-1/TR is sourced from the original manufacturer or authorized distributors?
All 1N4150-1/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4150-1/TR meets industry standards.
7.What is the process for return or replacement of 1N4150-1/TR?
All 1N4150-1/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4150-1/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4150-1/TR part is unused and in its original packaging.
Return procedure for 1N4150-1/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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