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Microchip Technology 1N4150/TR
- Part No.:
- 1N4150/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4150/TR.pdf
- Description:
- DIODE GP REV 50V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:4,578
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Product details
Overview
1N4150/TR from Microsemi (now Microchip Technology) is a hermetically sealed glass switching diode in DO-35 package, rated for 50 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time. It operates from –65°C to +175°C and is used in high-reliability timing, clamping, and waveform shaping circuits in aerospace and industrial control systems.
For engineers reviewing the 1N4150/TR datasheet, 1N4150/TR pinout, 1N4150/TR application, or 1N4150/TR equivalent, key selection criteria include its 4 ns trr, 500 mW power dissipation, hermetic DO-35 package, MIL-PRF-19500/231 compliance, and suitability for high-temperature switching where reliability exceeds plastic-packaged alternatives.
Technical Context
The 1N4150/TR employs metallurgically bonded double-plug construction inside a hermetically sealed glass envelope, enabling stable operation across –65°C to +175°C. Its low junction-to-lead thermal resistance (250°C/W max at L = 0.375") supports sustained 200 mA conduction with minimal self-heating under derated conditions.
Designed per MIL-PRF-19500/231, the device delivers fast switching performance: 4 ns reverse recovery time (trr) at IF = IR = 10 mA, IRec = 1 mA, and forward voltage drop of 0.87–1.00 V at 200 mA. Capacitance is limited to ≤2.5 pF at 0 V, supporting RF and high-speed digital signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VRWM) | 50 V - Maximum DC blocking capability before significant leakage or breakdown |
| Forward Current (IF) | 200 mA - Continuous operating current at +25°C to +75°C ambient |
| Reverse Recovery Time (trr) | 4 ns - Enables use in >100 MHz switching applications with minimal tail current |
| Forward Voltage (VF) | 0.87–1.00 V @ 200 mA - Low conduction loss for efficient signal routing and clamping |
| Junction-to-Lead Thermal Resistance (RθJL) | 250°C/W max @ L = 0.375" - Limits temperature rise during pulsed or continuous operation |
| Capacitance (Cj) | ≤2.5 pF @ 0 V - Minimizes signal distortion in high-frequency coupling and sampling circuits |
Pinout & Package
Hermetically sealed glass DO-35 package with axial leads; cathode identified by banding on one end. Lead material: copper-clad steel; finish: tin/lead.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in rectifier/clamp path; must withstand surge current up to 4 A (1 µs) |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; defines polarity for correct orientation in PCB layout and circuit protection schemes |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Enables operation from –65°C to +175°C without moisture ingress or parameter drift over time |
| Metallurgical bonding | Provides robust interconnect integrity under thermal cycling and mechanical shock |
| Double-plug construction | Reduces series inductance and improves high-frequency switching consistency |
| MIL-PRF-19500/231 qualification | Validates reliability for defense, avionics, and space-qualified subsystems requiring screening and traceability |
Applications
| High-Speed Pulse Clamping | Aerospace Signal Conditioning |
|---|---|
Use Scenario: Protecting FPGA I/O pins from ESD-induced voltage overshoot in satellite telemetry interfaces. IC Role / Device Role / Timing Role: Fast-switching clamp diode shunting transients to ground while preserving signal edge fidelity. Use Value: 4 ns trr and ≤2.5 pF capacitance prevent pulse distortion and ensure sub-nanosecond response to transient events. | Use Scenario: Level-shifting and waveform sharpening in radiation-hardened flight computer clock distribution networks. IC Role / Device Role / Timing Role: Edge-shaping diode in Schmitt-trigger input stages and crystal oscillator bias networks. Use Value: Stable VF (0.87–1.00 V @ 200 mA) and hermetic DO-35 package ensure consistent timing margin across thermal extremes. |
| Industrial Temperature Sensor Interface | High-Reliability Power Supply Sequencing |
Use Scenario: Biasing precision thermistor bridges in oil & gas downhole monitoring equipment operating at +150°C ambient. IC Role / Device Role / Timing Role: Temperature-stable forward conduction element in ratiometric reference paths. Use Value: Specified operation to +175°C and <0.1 µA leakage at 50 V enable accurate bridge balance over full industrial range. | Use Scenario: Controlling power-up sequencing in military-grade radar transmitter modules with strict voltage ramp requirements. IC Role / Device Role / Timing Role: Discrete timing element in RC-based delay networks for controlled gate drive activation. Use Value: Predictable 4 ns trr and 500 mW dissipation allow precise microsecond-scale delays without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148TR | Plastic DO-35 package; 75 V VRWM; 4 ns trr; not MIL-qualified | Limited to commercial/industrial use; unsuitable for extended high-temp or screened environments | Select when cost sensitivity outweighs hermeticity and military spec requirements |
| 1N914B-1 | Same hermetic DO-35 package; 75 V VRWM; 4 ns trr; JAN/JANTXV versions available | Higher reverse voltage rating enables broader clamping range in legacy analog designs | Choose when 75 V blocking is required and MIL-PRF-19500/231 compliance remains essential |
Compared with 1N4150/TR, 1N4148TR offers lower cost but lacks hermetic sealing and temperature range; 1N914B-1 provides higher VRWM while maintaining identical qualification level and thermal performance-making it a direct functional upgrade where voltage headroom is critical.
Availability
1N4150/TR is available at Aetrix Electronics and suitable for high-reliability timing, aerospace signal conditioning, and industrial temperature sensor interface applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N4150/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and power solutions for aerospace, defense, and industrial markets.
The 1N4150/TR belongs to Microsemi's legacy MIL-PRF-19500/231 qualified discrete diode family, engineered specifically for mission-critical switching, clamping, and waveform shaping in extreme-environment electronics.
FAQ
What is the maximum reverse voltage rating for the 1N4150/TR?
The 1N4150/TR has a DC reverse voltage (VRWM) rating of 50 V. This value is specified at 25°C ambient and represents the maximum continuous voltage the device can block in reverse bias without exceeding leakage current limits. Operation above this voltage risks irreversible breakdown, especially outside the –65°C to +175°C storage and operating range. The 1N4150/TR must be applied within this limit in all clamping, protection, and rectification circuits.
Does the 1N4150/TR meet military specifications?
Yes, the 1N4150/TR is manufactured and tested per MIL-PRF-19500/231, Class 231, and is available in JAN, JANTX, and JANTXV versions. These variants undergo rigorous screening-including temperature cycling, burn-in, and lot acceptance testing-to ensure reliability in defense and aerospace applications. The 1N4150/TR's hermetic DO-35 package and metallurgical construction directly support compliance with these requirements.
What is the reverse recovery time (trr) of the 1N4150/TR and how is it measured?
The 1N4150/TR has a reverse recovery time (trr) of 4 ns maximum, measured under standardized conditions: IF = IR = 10 mA, IRec = 1 mA, at 25°C. This parameter reflects the time required for minority carriers to clear the junction after forward conduction ceases. The 4 ns trr makes the 1N4150/TR suitable for high-frequency switching applications such as pulse shaping and RF detector circuits where fast turn-off is essential.
Can the 1N4150/TR operate continuously at +175°C?
The 1N4150/TR is rated for storage and operating temperatures from –65°C to +175°C, but continuous operation at +175°C requires derating. At ambient temperatures above +75°C, forward current must be reduced by 2 mA/°C. Therefore, at +175°C, the allowable continuous forward current drops to zero unless heatsinking or pulsed operation is employed. The 1N4150/TR's thermal design supports short-duration surges up to 4 A (1 µs) even at elevated temperatures.
How is polarity indicated on the 1N4150/TR package?
Polarity on the 1N4150/TR is marked by a visible cathode band on the glass DO-35 envelope-typically a single painted or etched stripe near one lead end. This banded end corresponds to the cathode terminal, which must be connected toward the higher-potential side in forward-biased configurations. Correct orientation is critical for proper clamping, rectification, and protection functionality; reversing the 1N4150/TR will result in unintended conduction or open-circuit behavior.
1N4150/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- 2.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4150/TR FAQ
1.How can I place an order for 1N4150/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4150/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4150/TR reliable?
The price and inventory of 1N4150/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4150/TR is usually 5 days.
3.What payment methods are accepted for 1N4150/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4150/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4150/TR?
1N4150/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4150/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4150/TR?
For technical support, including 1N4150/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4150/TR requirements.
6.How does Aetrix verify that 1N4150/TR is sourced from the original manufacturer or authorized distributors?
All 1N4150/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4150/TR meets industry standards.
7.What is the process for return or replacement of 1N4150/TR?
All 1N4150/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4150/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4150/TR part is unused and in its original packaging.
Return procedure for 1N4150/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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