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Microchip Technology 1N4150UBD
- Part No.:
- 1N4150UBD
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N4150UBD.pdf
- Description:
- DIODE ARRAY GP 50V 200MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:6,523
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Product details
Overview
1N4150UBD from Microsemi (now Microchip Technology) is a hermetically sealed, metallurgically bonded silicon switching diode in a DO-35 glass package, rated for 50 V DC reverse voltage, 200 mA operating current, and 4 ns reverse recovery time (TRR), used in high-reliability timing, clamping, and waveform shaping circuits in aerospace and industrial control systems.
For engineers reviewing the 1N4150UBD datasheet, 1N4150UBD pinout, 1N4150UBD application, or 1N4150UBD equivalent, key selection criteria include its 4 ns TRR, 50 V VRWM, 250°C/W junction-to-lead thermal resistance, MIL-PRF-19500/231 compliance, and operation across –65°C to +175°C ambient.
Technical Context
The 1N4150UBD employs a double-plug construction with copper-clad steel leads and tin/lead finish, enabling robust thermal performance (ZθJX ≤ 70°C/W) and stable operation under extreme temperature cycling. Its metallurgical bond ensures low forward voltage drift and repeatable switching behavior.
Designed per MIL-PRF-19500/231 Class B (JANTXV), it supports high-speed signal routing where fast turn-off (TRR ≤ 4 ns), low capacitance (≤ 2.5 pF @ 0 V), and low leakage (IR ≤ 0.1 µA @ 50 V) are critical for pulse integrity and noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| DC Reverse Voltage (VRWM) | 50 V - Maximum continuous reverse bias before significant leakage or breakdown in clamping or protection circuits. |
| Reverse Recovery Time (TRR) | 4 ns - Enables reliable operation up to ~100 MHz switching frequencies in sample-and-hold, pulse shaping, and logic interface applications. |
| Forward Voltage (VF) | 0.87–1.00 V @ 200 mA - Low conduction loss suitable for low-power signal routing without excessive self-heating. |
| Junction-to-Lead Thermal Resistance (RθJL) | 250°C/W max @ L = 0.375″ - Defines maximum allowable power dissipation (500 mW) with standard lead mounting; requires minimal heatsinking. |
| Capacitance @ 0 V | ≤ 2.5 pF - Minimizes signal distortion and crosstalk in RF-coupled or high-frequency sampling paths. |
| Operating Temperature Range | –65°C to +175°C - Validated for use in engine control units, downhole tools, and satellite subsystems without derating below –65°C. |
Pinout & Package
Hermetically sealed DO-35 glass package with axial leads; cathode identified by band at one end. Leads are copper-clad steel with tin/lead finish; total length accommodates standard 0.375″ lead-to-lead thermal test condition.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to lower-potential node in clamp, detector, or switch configuration; must tolerate 200 mA continuous and 4 A surge (1 µs). |
| Cathode | Current exit terminal; marked with band | Connected to higher-potential node; reverse-biased up to 50 V; leakage limited to ≤0.1 µA at 50 V, 25°C. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bonding | Ensures stable VF and TRR over lifetime and thermal cycling; eliminates wirebond fatigue failure modes in high-vibration environments. |
| Hermetic glass sealing | Prevents moisture ingress and corrosion; maintains IR stability and breakdown consistency over 20+ years in sealed enclosures. |
| Double-plug construction | Improves mechanical strength and thermal path continuity between die and leads, supporting 250°C/W RθJL rating. |
| MIL-PRF-19500/231 compliance | Qualified to JANTXV level with screening including burn-in, temperature cycling, and lot acceptance testing for mission-critical use. |
Applications
| High-Speed Pulse Clamping | RF Detector Biasing |
|---|---|
Use Scenario: Protecting ADC input stages from ESD-induced overshoot in avionics data acquisition modules. IC Role / Device Role / Timing Role: Fast-switching clamp diode limiting transient excursions to <50 V while preserving signal edge fidelity. Use Value: 4 ns TRR and ≤2.5 pF capacitance prevent ringing and ensure sub-10 ns pulse fidelity at 50 Ω source impedance. | Use Scenario: Providing bias reference for Schottky diode detectors in L-band radar receiver front-ends. IC Role / Device Role / Timing Role: Stable DC reference generator with ultra-low leakage (<0.1 µA) to avoid detector offset drift. Use Value: IR ≤ 0.1 µA @ 50 V enables stable bias over temperature, minimizing detector gain error in –55°C to +125°C operation. |
| Timing Circuit Steering | Industrial Sensor Signal Conditioning |
Use Scenario: Routing clock edges between FPGA I/O banks with precise phase alignment in radiation-tolerant flight computers. IC Role / Device Role / Timing Role: High-speed steering diode selecting between two clock sources without adding jitter or skew. Use Value: Consistent 0.87–1.00 V VF at 200 mA ensures matched propagation delay across parallel paths. | Use Scenario: Isolating thermocouple cold-junction compensation signals from noisy 24 V PLC backplanes. IC Role / Device Role / Timing Role: Bidirectional isolation diode preventing ground loop currents while passing low-level mV signals. Use Value: –65°C to +175°C operating range matches sensor probe environmental envelope; hermetic seal prevents contamination-induced drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148WS | Surface-mount SOD-323 package; TRR = 4 ns; VRWM = 100 V; IR = 25 nA @ 75 V - lower leakage but higher VRWM. | Used in space-constrained PCBs where axial DO-35 layout is impractical; not qualified to MIL-PRF-19500. | Select when board area is constrained and military qualification is not required. |
| 1N4448 | Same DO-35 package; TRR = 4 ns; VRWM = 75 V; VF = 0.87–1.00 V @ 200 mA; IR = 0.1 µA @ 75 V - higher VRWM, identical thermal and switching specs. | Preferred in 75 V rail protection; shares same footprint and thermal profile but lacks JANTXV screening. | Choose for commercial-grade 75 V applications requiring same form factor and thermal behavior. |
Compared with 1N4150UBD, the 1N4148WS offers smaller size and lower leakage but no military qualification, while the 1N4448 provides higher reverse voltage rating in the same DO-35 package without JANTXV screening - both require revalidation of thermal margin and reliability testing for aerospace use.
Availability
1N4150UBD is available at Aetrix Electronics and suitable for high-reliability timing, pulse clamping, and sensor signal conditioning applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N4150UBD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and long-term supply assurance.
The 1N4150UBD belongs to Microsemi's legacy MIL-PRF-19500/231 qualified discrete diode family, engineered specifically for high-speed switching in mission-critical systems where parameter stability over temperature and time is non-negotiable.
FAQ
What is the maximum reverse voltage rating for the 1N4150UBD?
The 1N4150UBD has a DC reverse voltage (VRWM) rating of 50 V, verified per MIL-PRF-19500/231. This defines the highest continuous reverse bias the device can withstand without exceeding specified leakage current (≤0.1 µA at 25°C). Exceeding this voltage risks irreversible breakdown, especially under temperature stress or surge conditions.
Does the 1N4150UBD meet military specifications?
Yes, the 1N4150UBD is manufactured and tested to MIL-PRF-19500/231 Class B (JANTXV) requirements, including screening for temperature cycling, burn-in, and lot acceptance testing. Its hermetic DO-35 package, metallurgical bonding, and double-plug construction are all defined in that specification to ensure reliability in aerospace and defense platforms.
What is the reverse recovery time (TRR) of the 1N4150UBD and how is it measured?
The 1N4150UBD has a reverse recovery time (TRR) of ≤4 ns, measured under standardized conditions: IF = IR = 10 mA, IRec = 1 mA, and 25°C ambient. This value reflects the time required for minority carriers to clear the junction after forward conduction, directly impacting high-frequency switching fidelity in the 1N4150UBD's intended applications.
Can the 1N4150UBD operate at temperatures above +125°C?
Yes, the 1N4150UBD is fully rated for operation from –65°C to +175°C, with derating applied above +75°C (2 mA/°C reduction in operating current beyond TL = +75°C at L = 0.375″). Its hermetic glass package and metallurgical bond enable stable electrical parameters across this full range without parameter shift or seal degradation.
What does the "UBD" suffix indicate in 1N4150UBD?
The "UBD" suffix in 1N4150UBD denotes a specific Microsemi manufacturing variant compliant with MIL-PRF-19500/231 JANTXV requirements, including enhanced screening, traceable lot documentation, and guaranteed 1N4150UBD parametric limits across temperature. It is not interchangeable with commercial-grade 1N4150 variants lacking this suffix.
1N4150UBD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
1N4150UBD FAQ
1.How can I place an order for 1N4150UBD through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4150UBD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4150UBD reliable?
The price and inventory of 1N4150UBD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4150UBD is usually 5 days.
3.What payment methods are accepted for 1N4150UBD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4150UBD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4150UBD?
1N4150UBD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4150UBD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4150UBD?
For technical support, including 1N4150UBD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4150UBD requirements.
6.How does Aetrix verify that 1N4150UBD is sourced from the original manufacturer or authorized distributors?
All 1N4150UBD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4150UBD meets industry standards.
7.What is the process for return or replacement of 1N4150UBD?
All 1N4150UBD units undergo pre-shipment inspection (PSI). If there is an issue with 1N4150UBD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4150UBD part is unused and in its original packaging.
Return procedure for 1N4150UBD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4150UBD Tags
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BAV99,215
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BAV70LT1G
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BAT54S-7-F
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BAV99LT1G
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