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Microchip Technology 1N4151/TR
- Part No.:
- 1N4151/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4151/TR.pdf
- Description:
- DIODE GEN PURP 75V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:2,893
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Product details
Overview
1N4151/TR from Microsemi is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 (DO-204AH) glass package, rated for 75 V peak reverse voltage, 200 mA average forward current, 2 ns reverse recovery time, 1.0 V forward voltage at 100 mA, and 4 pF junction capacitance. It serves as a high-speed signal routing and clamping device in digital logic interfaces and data line protection circuits.
For engineers reviewing the 1N4151/TR datasheet, 1N4151/TR pinout, 1N4151/TR application, or 1N4151/TR equivalent, key selection criteria include reverse recovery time, junction capacitance, peak reverse voltage rating, forward voltage drop under load, and MIL-PRF-19500 screening compatibility for ruggedized designs.
Technical Context
This diode employs internal metallurgical bonding to minimize parasitic inductance and ensure stable high-frequency performance. Its double-plug DO-35 glass construction provides hermetic sealing, enabling operation from –65 °C to +150 °C junction temperature with reliable thermal cycling endurance.
The 1N4151/TR exhibits low leakage (≤50 nA at 75 V, 25 °C) and tight trr consistency (2 ns typical at 10 mA), making it suitable for fast edge-rate applications such as RS-232/RS-422 level translation and Ethernet 10BASE-T receiver protection where signal integrity depends on minimal charge storage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRWM) | 75 V - supports DC bias and transient clamping up to 75 V without breakdown in signal path applications. |
| Reverse Recovery Time (trr) | 2 ns - enables clean switching at >100 MHz clock edges with minimal tail current in high-speed logic interfaces. |
| Junction Capacitance (CJ) | 4 pF @ 0 V - limits capacitive loading on high-impedance data lines, preserving rise/fall times in serial communication paths. |
| Forward Voltage (VF) | 1.0 V @ 100 mA - ensures low conduction loss and minimal power dissipation in active-clamp or steering configurations. |
| Average Forward Current (IO) | 200 mA - supports continuous duty-cycle operation in moderate-current signal routing (e.g., bus termination, level shifting). |
| Operating Junction Temp | –65 °C to +150 °C - validated for extended temperature range use in industrial control and aerospace-grade subsystems. |
Pinout & Package
Package: DO-35 (DO-204AH), hermetically sealed glass case with tin/lead or RoHS-compliant matte-tin plated copper-clad steel leads; cathode indicated by axial band; weight 0.2 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in clamping or steering configuration; must be routed with low-inductance trace for fast-switching integrity. |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; ties to higher-potential rail or signal line requiring protection; defines polarity-sensitive placement on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgically bonded junction | Eliminates wire-bond interconnects, reducing parasitic inductance and improving reliability under thermal shock. |
| Double-plug DO-35 construction | Ensures mechanical stability and hermetic seal integrity during reflow or wave soldering cycles. |
| 2 ns reverse recovery time | Enables use in >100 MHz digital timing paths without pulse distortion or false triggering. |
| 4 pF junction capacitance | Minimizes signal attenuation and phase shift on high-impedance, high-frequency nodes like oscillator feedback paths. |
Applications
| RS-232 Interface Protection | Ethernet 10BASE-T Receiver Clamping |
|---|---|
Use Scenario: Protecting UART transceiver pins against ESD and line-induced transients in industrial serial links. IC Role / Device Role: Bidirectional clamping diode placed between TX/RX lines and VCC/GND rails. Use Value: 2 ns trr prevents latch-up during fast edge transitions; 75 V VRWM accommodates ±15 V RS-232 swing plus margin. | Use Scenario: Limiting differential input voltage excursions on 10BASE-T PHY receivers. IC Role / Device Role: Signal-line clamp limiting common-mode overvoltage to protect PHY front-end circuitry. Use Value: 4 pF CJ avoids bandwidth degradation; DO-35 package allows dense through-hole layout near RJ-45 magnetics. |
| Computer Memory Address Decoding | Plated-Wire Memory Drivers |
Use Scenario: Isolating address bus segments in legacy TTL-based computer systems with core memory. IC Role / Device Role: High-speed steering diode enabling selective enable/disable of decoder outputs. Use Value: 200 mA IO sustains drive capability across multiple parallel loads; 2 ns trr prevents address skew in multi-bit decoding. | Use Scenario: Pulse shaping and current steering in magnetic plated-wire memory access circuits. IC Role / Device Role: Fast-switching element controlling current direction through memory wire windings. Use Value: Metallurgical bonding ensures consistent trr across temperature extremes encountered in memory cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148WS-7-F | Same VRWM (75 V), identical trr (4 ns max), but SOD-323 surface-mount package; 1.25 V VF @ 100 mA. | Requires PCB redesign for SMT placement; unsuitable for through-hole legacy systems. | Select when board space is constrained and reflow assembly is available. |
| 1N4448-1 | Identical DO-35 package, same VRWM (75 V), but 4 ns trr (vs. 2 ns) and 20 nA IR @ 75 V (vs. 50 nA). | Acceptable where <100 MHz edge rates dominate; less optimal for sub-5 ns timing-critical paths. | Choose for cost-sensitive, non-time-critical switching where 2 ns advantage is unnecessary. |
Compared with 1N4148WS-7-F and 1N4448-1, the 1N4151/TR delivers superior reverse recovery speed in a through-hole package, making it uniquely suited for legacy computer interface upgrades and high-reliability MIL-spec designs where leaded mounting and sub-3 ns switching are jointly required.
Availability
1N4151/TR is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10BASE-T receiver clamping, and computer memory address decoding requiring stable component supply across long-lifecycle industrial programs.
Supply support for 1N4151/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial applications.
The 1N4151/TR belongs to Microsemi's legacy JEDEC-registered switching diode family designed specifically for military-grade signal integrity and thermal robustness in mission-critical computing and communications hardware.
FAQ
What is the maximum reverse recovery time specified for the 1N4151/TR?
The 1N4151/TR has a reverse recovery time (trr) of 2 ns at 10 mA test condition, as confirmed in the Microsemi T4-LDS-0239 datasheet. This value reflects its optimized junction design for high-speed switching in digital logic and data line applications. The 1N4151/TR maintains this performance across its rated temperature range without derating.
Does the 1N4151/TR meet MIL-PRF-19500 screening requirements?
Yes - the 1N4151/TR is available with screening per MIL-PRF-19500, as explicitly stated in the Microsemi documentation. Screening options are encoded in the full part nomenclature (e.g., 1N4151-1 with MQ/MX/MV prefixes). The base 1N4151/TR commercial version does not include screening unless ordered with appropriate suffixes.
What is the junction capacitance of the 1N4151/TR and why does it matter?
The 1N4151/TR exhibits 4 pF junction capacitance at 0 V, measured per standard test conditions. This low value minimizes capacitive loading on high-frequency signal paths - critical in applications like Ethernet 10BASE-T receiver clamping and RS-422 interface networks where signal edge fidelity must be preserved.
Can the 1N4151/TR replace the 1N4148 in existing designs?
The 1N4151/TR shares the same DO-35 package and 75 V VRWM as the 1N4148, but offers faster trr (2 ns vs. 4 ns) and higher IR (50 nA vs. 25 nA). It can replace the 1N4148 where improved switching speed is beneficial, though designers should verify leakage sensitivity in ultra-low-power bias networks before substitution.
What is the forward voltage drop of the 1N4151/TR at rated current?
The 1N4151/TR has a forward voltage (VF) of 1.0 V at 100 mA, as specified in the Electrical Characteristics table. This value ensures predictable conduction loss in clamping and steering circuits, supporting accurate voltage margining in logic-level translation and bus protection schemes involving the 1N4151/TR.
1N4151/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 2 ns
- Current - Reverse Leakage @ Vr:
- 50 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4151/TR FAQ
1.How can I place an order for 1N4151/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4151/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4151/TR reliable?
The price and inventory of 1N4151/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4151/TR is usually 5 days.
3.What payment methods are accepted for 1N4151/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4151/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4151/TR?
1N4151/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4151/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4151/TR?
For technical support, including 1N4151/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4151/TR requirements.
6.How does Aetrix verify that 1N4151/TR is sourced from the original manufacturer or authorized distributors?
All 1N4151/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4151/TR meets industry standards.
7.What is the process for return or replacement of 1N4151/TR?
All 1N4151/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4151/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4151/TR part is unused and in its original packaging.
Return procedure for 1N4151/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4151/TR Tags
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1N4448X-TP
Micro Commercial Co
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1N4148WX-TP
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1N4148TR
onsemi
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MMSD4148T1G
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1N914BWT
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BAS21LT1G
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MMSD914T1G
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BAV21W-7-F
Diodes Incorporated
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