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Microchip Technology 1N4154-1E3
- Part No.:
- 1N4154-1E3
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4154-1E3.pdf
- Description:
- DIODE GEN PURP 35V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:8,804
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Product details
Overview
1N4154-1E3 from Microsemi is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 (DO-204AH) package, rated for 35 V peak reverse voltage, 200 mA average forward current, 4 pF junction capacitance, 2 ns reverse recovery time, and operating from –65 °C to +150 °C. It serves as a high-speed signal rectifier in computer data lines and interface circuits.
For engineers reviewing the 1N4154-1E3 datasheet, 1N4154-1E3 pinout, 1N4154-1E3 application, or 1N4154-1E3 equivalent, key selection criteria include its 35 V VRWM rating, low 4 pF capacitance, sub-2 ns trr, RoHS-compliant matte-tin plating, and MIL-PRF-19500 screening availability.
Technical Context
This diode employs a double-plug glass package with internal metallurgical bonding to minimize parasitic inductance and ensure stable high-frequency performance. Its 4 pF junction capacitance and 2 ns reverse recovery time enable reliable operation in 10 Mbps–100 Mbps digital signal paths.
The device uses tin/lead or RoHS-compliant matte-tin over copper-clad steel leads, solderable per MIL-STD-750 Method 2026, with cathode polarity marked by a band. It is specified for use at junction temperatures up to +150 °C and storage up to +200 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 35 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in 3.3 V–24 V logic interface clamping. |
| trr | 2 ns - Time to transition from forward conduction to reverse blocking; enables clean edge integrity in >50 MHz clock/data lines. |
| CJ @ 0 V | 4 pF - Junction capacitance at zero bias; limits capacitive loading on high-speed signal traces (e.g., RS-232, Ethernet 10BASE-T). |
| IO | 200 mA - Average forward current handling; supports sustained switching in core driver and memory decode circuits. |
| TJ Range | –65 °C to +150 °C - Operational junction temperature range; qualifies for industrial and extended-temperature embedded systems. |
| IR @ VR | 25 nA @ 35 V - Reverse leakage at rated VR; ensures minimal standby power loss in battery-backed or low-power logic interfaces. |
Pinout & Package
DO-35 (DO-204AH) hermetically sealed glass package with axial leads; cathode indicated by color band; weight 0.2 g; body diameter 1.40–2.29 mm, body length 3.05–5.08 mm, lead length ≥25.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node during conduction; requires trace routing compatible with 200 mA steady-state current. |
| Cathode | Forward current exit / reverse voltage terminal | Banded end; ties to higher-potential rail or clamping node; critical for correct polarity in ESD protection and level-shifting paths. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bonding | Eliminates wire bonds to reduce parasitic inductance and improve RF stability in fast-switching paths. |
| Double-plug construction | Enhances mechanical robustness and hermetic seal integrity under thermal cycling and vibration stress. |
| RoHS-compliant matte-tin plating | Enables lead-free reflow compatibility while maintaining solderability per MIL-STD-750 Method 2026. |
| MIL-PRF-19500 screening option | Supports high-reliability applications requiring tested lot traceability, burn-in, and parametric verification. |
Applications
| RS-232 Interface Protection | Ethernet 10BASE-T Line Clamping |
|---|---|
Use Scenario: Protecting UART transceivers from ESD and line transients in industrial serial gateways. IC Role / Device Role: Bidirectional transient voltage clamp placed between TX/RX lines and ground. Use Value: 35 V VRWM and 2 ns trr allow fast response to ±8 kV HBM events without distorting 115.2 kbps signal edges. | Use Scenario: Signal conditioning and DC blocking in 10BASE-T PHY front-end transformers. IC Role / Device Role: High-speed AC coupling diode in differential pair termination networks. Use Value: 4 pF CJ minimizes insertion loss below 10 MHz; 200 mA IO sustains surge currents during cable hot-plug events. |
| Core Memory Driver Switching | Plated-Wire Memory Decoder |
Use Scenario: Driving magnetic core memory word lines with precise timing pulses in legacy avionics systems. IC Role / Device Role: Fast turn-off switch in pulse-forming networks controlling core saturation. Use Value: 2 ns trr ensures <5 ns dead-time between complementary drive signals, preventing core half-select errors. | Use Scenario: Address decoding logic in plated-wire memory arrays used in aerospace flight computers. IC Role / Device Role: Logic-level translation and isolation element in multi-rail address bus buffers. Use Value: Low 1.0 V VF at 30 mA enables clean TTL-to-HTL level shifting with <100 mW dissipation per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148-TR | 75 V VRWM, 4 ns trr, same DO-35 package, non-RoHS default | Higher voltage margin but slower switching; suitable where 35 V rating is insufficient | Select when system reverse transients exceed 35 V but sub-2 ns speed is not required. |
| BAS16,115 | 85 V VRWM, 4 ns trr, SOT-23 package, RoHS compliant | Surface-mount only; lacks MIL-PRF-19500 screening option and hermetic seal | Choose for automated assembly and space-constrained PCBs where military-grade reliability is not mandated. |
Compared with 1N4154-1E3, the 1N4148-TR offers higher reverse voltage tolerance at the cost of 2× longer trr, while the BAS16,115 trades hermetic sealing and screening capability for SMT manufacturability and wider VRWM - making each suitable for distinct reliability, layout, and environmental requirements.
Availability
1N4154-1E3 is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10BASE-T line clamping, and core memory driver switching requiring stable component supply across industrial, aerospace, and legacy computing programs.
Supply support for 1N4154-1E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N4154-1E3 belongs to Microsemi's legacy JEDEC-registered switching diode family, engineered specifically for high-speed signal integrity in mission-critical computing and communications hardware.
FAQ
What is the maximum reverse voltage rating for the 1N4154-1E3?
The 1N4154-1E3 has a working peak reverse voltage (VRWM) of 35 V. This is the maximum continuous DC reverse voltage the diode can withstand without entering avalanche breakdown under normal operating conditions at 25 °C. Exceeding this value risks irreversible damage, especially at elevated junction temperatures.
Does the 1N4154-1E3 meet RoHS requirements?
Yes, the "E3" suffix in 1N4154-1E3 explicitly denotes RoHS compliance per EU Directive 2011/65/EU. The device uses matte-tin plating over copper-clad steel leads and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.
What is the reverse recovery time (trr) of the 1N4154-1E3 and why does it matter?
The 1N4154-1E3 has a reverse recovery time of 2 ns at 10 mA forward current. This ultrafast switching characteristic minimizes charge storage and prevents signal distortion in high-frequency digital applications such as Ethernet 10BASE-T and RS-232 data transmission, where edge fidelity is critical.
Can the 1N4154-1E3 be used in place of the 1N4148 in all applications?
No - while both are DO-35 switching diodes, the 1N4154-1E3 has a lower 35 V VRWM versus 75 V for the 1N4148, and faster 2 ns trr versus 4 ns. Substituting 1N4154-1E3 for 1N4148 is only safe in circuits where reverse voltage never exceeds 35 V; otherwise, premature breakdown may occur.
Is MIL-PRF-19500 screening available for the 1N4154-1E3?
Yes, MIL-PRF-19500 screening is available for the 1N4154-1E3 upon request, with grading levels including JAN (MQ), JANTX (MX), JANTXV (MV), and JANS (MSP). Screening adds tests for parametric consistency, burn-in, and lot traceability - essential for aerospace and defense deployments.
1N4154-1E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 35 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 30 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 2 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 25 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4154-1E3 FAQ
1.How can I place an order for 1N4154-1E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4154-1E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4154-1E3 reliable?
The price and inventory of 1N4154-1E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4154-1E3 is usually 5 days.
3.What payment methods are accepted for 1N4154-1E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4154-1E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4154-1E3?
1N4154-1E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4154-1E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4154-1E3?
For technical support, including 1N4154-1E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4154-1E3 requirements.
6.How does Aetrix verify that 1N4154-1E3 is sourced from the original manufacturer or authorized distributors?
All 1N4154-1E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4154-1E3 meets industry standards.
7.What is the process for return or replacement of 1N4154-1E3?
All 1N4154-1E3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4154-1E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4154-1E3 part is unused and in its original packaging.
Return procedure for 1N4154-1E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4154-1E3 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
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