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Microchip Technology 1N4446/TR
- Part No.:
- 1N4446/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4446/TR.pdf
- Description:
- DIODE GEN PURP 75V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:2,935
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Product details
Overview
1N4446/TR from Microsemi is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 (DO-204AH) glass package, rated for 75 V peak reverse voltage, 200 mA average forward current, and 4 ns reverse recovery time. It serves as a high-speed signal rectifier in data line conditioning, interface networks, and memory driver circuits.
For engineers reviewing the 1N4446/TR datasheet, 1N4446/TR pinout, 1N4446/TR application, or 1N4446/TR equivalent, key selection criteria include reverse recovery time, junction capacitance, peak reverse voltage, thermal limits, and MIL-PRF-19500 screening compatibility.
Technical Context
This diode employs a low-capacitance, fast-switching silicon junction with metallurgical bonding to minimize parasitic inductance and ensure stable performance at frequencies up to tens of MHz. Its DO-35 glass package provides hermetic sealing and thermal stability across –65 °C to +150 °C junction temperature range.
The device exhibits 4 pF junction capacitance at 0 V and 4 ns reverse recovery time under 10 mA test conditions, enabling reliable operation in RS-232/RS-422 transceivers and Ethernet 10BASE-T line drivers where signal integrity and edge fidelity are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRWM) | 75 V - Maximum continuous DC reverse bias before breakdown; supports 10BASE-T and RS-422 common-mode margins. |
| Average Forward Current (IO) | 200 mA - Sustained conduction capability for logic-level signal routing without thermal derating at 25 °C ambient. |
| Reverse Recovery Time (trr) | 4 ns - Enables clean switching in >10 MHz digital signal paths; critical for core memory and decoding timing. |
| Junction Capacitance (CJ) | 4 pF @ 0 V - Minimizes signal loading on high-speed data lines such as RS-232 receivers and LAN interfaces. |
| Forward Voltage (VF) | 1.0 V @ 30 mA - Low conduction loss ensures minimal voltage drop in series-coupled signal paths. |
| Junction Temperature Range | –65 °C to +150 °C - Supports operation in extended industrial and military environments per MIL-PRF-19500 screening options. |
Pinout & Package
Hermetically sealed DO-35 (DO-204AH) glass package with axial leads; cathode indicated by color band. Total weight: 0.2 g. Dimensions: body diameter 1.40–2.29 mm, body length 3.05–5.08 mm, lead length ≥25.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to source-side signal or power rail; must be biased positive relative to cathode for conduction. |
| Cathode | Forward current exit / reverse blocking terminal | Marked with band; ties to load or reference node; blocks up to 75 V reverse potential during off-state. |
Key Features
| Feature | Design Value |
|---|---|
| Metallurgical bonding | Eliminates wire bond fatigue and interfacial delamination, ensuring long-term reliability in vibration-prone systems. |
| Double-plug DO-35 construction | Provides mechanical rigidity and consistent lead alignment for automated through-hole insertion and wave soldering. |
| Hermetic glass seal | Prevents moisture ingress and oxidation over lifetime, maintaining trr and IR stability in humid or corrosive environments. |
| MIL-PRF-19500 screening option | Enables qualification for defense/aerospace applications requiring lot traceability, burn-in, and parametric testing. |
Applications
| RS-232 Interface Protection | Ethernet 10BASE-T Line Driver |
|---|---|
Use Scenario: Clamping transient voltages and steering ESD events on serial communication lines between microcontrollers and peripherals. IC Role / Device Role / Timing Role: Signal-level bidirectional clamp diode placed between TX/RX lines and ground or VCC rails. Use Value: 4 ns trr and 4 pF CJ preserve rise/fall times while limiting overshoot to <±15 V under IEC 61000-4-2 Level 4 stress. | Use Scenario: Isolating differential pair signals and providing DC bias control in legacy Ethernet PHY front-ends. IC Role / Device Role / Timing Role: Fast-switching rectifier in bias network and common-mode choke termination circuits. Use Value: 75 V VRWM accommodates 10BASE-T's ±12 V differential swing plus safety margin; low VF minimizes bias error. |
| Plated-Wire Memory Driver | Core Memory Sense Amplifier |
Use Scenario: Pulse shaping and current steering in magnetic plated-wire memory arrays used in avionics and early computing systems. IC Role / Device Role / Timing Role: High-speed switch controlling write current direction and read pulse polarity. Use Value: 4 ns trr enables sub-100 ns access cycles; metallurgical bonding sustains repeated surge currents up to 500 mA. | Use Scenario: Detecting small flux changes in ferrite core memory stacks during read operations. IC Role / Device Role / Timing Role: Low-leakage signal rectifier converting induced sense pulses into TTL-compatible logic levels. Use Value: 20 nA IR @ 75 V ensures minimal baseline offset; hermetic seal prevents parameter drift over decades of storage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W | Same DO-35 package, 75 V VRWM, but 4 ns trr and 4 pF CJ specified at 1 mA instead of 10 mA; RoHS-compliant matte-tin plating standard. | Optimized for surface-mount assembly via SOD-123 variant; less suitable for legacy through-hole designs requiring axial lead form. | Select when RoHS compliance and SMT compatibility are required; verify trr test condition alignment with system timing budget. |
| 1N4448 | Identical VRWM (75 V), trr (4 ns), CJ (4 pF), and IO (200 mA); differs only in forward voltage specification (1.0 V @ 100 mA vs. 1.0 V @ 30 mA for 1N4446/TR). | No functional difference in most signal routing roles; minor VF variation irrelevant in clamping or steering configurations. | Direct functional substitute where forward conduction level exceeds 30 mA; confirm marking and screening grade match program requirements. |
Compared with 1N4446/TR, the 1N4148W offers modern RoHS compliance and SMT readiness but requires revalidation of trr under system-relevant test current, while the 1N4448 delivers identical electrical behavior in all key switching parameters and may be used interchangeably in through-hole designs with verified screening level.
Availability
1N4446/TR is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10BASE-T line drivers, and plated-wire memory systems requiring stable component supply, long-lifecycle support, and MIL-PRF-19500 screening traceability.
Supply support for 1N4446/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and discrete components for aerospace, defense, and industrial markets.
The 1N4446/TR belongs to Microsemi's legacy JEDEC-registered switching diode family designed for mission-critical signal routing, transient suppression, and high-density memory subsystems where hermeticity and parametric stability are mandatory.
FAQ
What is the maximum reverse voltage rating for the 1N4446/TR?
The 1N4446/TR has a working peak reverse voltage (VRWM) of 75 V, meaning it can reliably block up to 75 V DC in reverse bias without breakdown. This rating applies across its full operating junction temperature range of –65 °C to +150 °C and is validated per MIL-PRF-19500 screening when specified. The 1N4446/TR maintains this rating under steady-state conditions, excluding transient spikes.
Does the 1N4446/TR have a specified reverse recovery time, and under what conditions?
Yes, the 1N4446/TR has a reverse recovery time (trr) of 4 ns, measured at 10 mA forward current, 1 A reverse current, and 50 % IRR decay level per JEDEC Test Method JESD282-B. This value is confirmed in the official Microsemi T4-LDS-0239 datasheet and reflects actual switching performance in high-frequency signal paths like RS-232 and 10BASE-T interfaces.
Is the 1N4446/TR RoHS compliant?
The 1N4446/TR is available in both RoHS-compliant (e3 suffix) and non-RoHS versions. Standard commercial-grade 1N4446/TR units may carry tin/lead plating unless ordered with the e3 designation, which specifies matte-tin over copper-clad steel per MIL-STD-750 Method 2026. Always verify the part number suffix and packaging label to confirm compliance status for your build.
What package type does the 1N4446/TR use, and how is polarity identified?
The 1N4446/TR uses the DO-35 (also designated DO-204AH) hermetically sealed glass axial package. Polarity is identified by a visible cathode band near one lead end; the banded end is the cathode. Leads are tin/lead or RoHS-compliant matte-tin plated, solderable per MIL-STD-750 Method 2026, and dimensionally compliant with EIA-296 tape-and-reel standards when ordered accordingly.
Can the 1N4446/TR replace the 1N4148 in existing designs?
The 1N4446/TR shares identical key parameters with the 1N4148 - including 75 V VRWM, 4 ns trr, 4 pF CJ, and 200 mA IO - and uses the same DO-35 package. However, the 1N4446/TR is specifically screened to MIL-PRF-19500 for high-reliability applications, whereas standard 1N4148 variants are commercial-grade. Substitution is electrically valid but requires verification of screening level, marking, and lot traceability requirements for the target program.
1N4446/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 20 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 25 nA @ 20 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4446/TR FAQ
1.How can I place an order for 1N4446/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4446/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4446/TR reliable?
The price and inventory of 1N4446/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4446/TR is usually 5 days.
3.What payment methods are accepted for 1N4446/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4446/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4446/TR?
1N4446/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4446/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4446/TR?
For technical support, including 1N4446/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4446/TR requirements.
6.How does Aetrix verify that 1N4446/TR is sourced from the original manufacturer or authorized distributors?
All 1N4446/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4446/TR meets industry standards.
7.What is the process for return or replacement of 1N4446/TR?
All 1N4446/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4446/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4446/TR part is unused and in its original packaging.
Return procedure for 1N4446/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4446/TR Tags
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