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Microchip Technology 1N4447/TR
- Part No.:
- 1N4447/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4447/TR.pdf
- Description:
- DIODE GEN PURP 75V 200MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:5,888
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Product details
Overview
1N4447/TR from Microsemi is a hermetically sealed, metallurgically bonded silicon switching diode in DO-35 (DO-204AH) glass package, rated for 75 V peak reverse voltage, 200 mA average forward current, 4 ns reverse recovery time, 4 pF junction capacitance, and operating from –65 °C to +150 °C - used in high-speed data line switching, RS-232/RS-422 interfaces, and Ethernet 10 Base-T receivers.
For engineers reviewing the 1N4447/TR datasheet, 1N4447/TR pinout, 1N4447/TR application, or 1N4447/TR equivalent, key selection criteria include reverse recovery time, junction capacitance, peak reverse voltage, thermal limits, and MIL-PRF-19500 screening compatibility for ruggedized industrial and communications systems.
Technical Context
This discrete switching diode employs internal metallurgical bonding and double-plug glass construction to achieve stable low-capacitance operation and minimal reverse recovery tailing. Its 4 ns trr and 4 pF CJ enable reliable performance in >10 MHz digital signal routing and transient suppression on bidirectional serial lines.
The device operates with cathode band polarity indication, tin/lead or RoHS-compliant matte-tin plating per MIL-STD-750 Method 2026, and supports through-hole mounting with flexible leads. It is not rated for avalanche or Zener operation and lacks integrated protection circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRWM) | 75 V - maximum continuous DC reverse bias before significant leakage or breakdown in signal path applications. |
| Reverse Recovery Time (trr) | 4 ns - enables clean edge transitions in 10–25 MHz clock/data lines without ringing or cross-talk. |
| Junction Capacitance (CJ) | 4 pF @ 0 V - minimizes loading on high-impedance, high-frequency nodes such as receiver inputs. |
| Average Forward Current (IO) | 200 mA - supports sustained conduction in logic-level clamping and level-shifting circuits. |
| Operating Junction Temp | –65 °C to +150 °C - validated for use in extended-temperature industrial controllers and telecom line cards. |
| Forward Voltage (VF) | 1.0 V @ 10 mA - ensures low power dissipation during active clamping or steering functions. |
Pinout & Package
Package: DO-35 (DO-204AH), hermetically sealed glass case with metallurgically bonded die and double-plug construction; cathode identified by single black band; weight 0.2 g; lead finish: tin/lead or RoHS-compliant matte-tin over copper-clad steel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node during conduction; must be routed with low-inductance trace for fast-switching integrity. |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Used for clamping to reference rail; band orientation confirms polarity during manual placement and AOI inspection. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Prevents moisture ingress and long-term parameter drift in humid or thermally cycled environments. |
| Metallurgical die bonding | Ensures robust thermal and mechanical attachment for stable trr and VF across temperature extremes. |
| Double-plug DO-35 construction | Provides mechanical stability and consistent lead alignment for automated through-hole insertion and wave soldering. |
| MIL-PRF-19500 screening option | Enables qualification for military/aerospace programs requiring lot traceability, burn-in, and parametric testing. |
Applications
| RS-232 Interface Protection | Ethernet 10 Base-T Receiver Clamping |
|---|---|
Use Scenario: Protecting UART transceivers from ESD and line transients in industrial serial gateways. IC Role / Device Role: Bidirectional clamping diode placed between TX/RX lines and ground/VCC rails. Use Value: 4 pF capacitance avoids signal distortion at 115.2 kbps; 4 ns trr prevents data corruption during fast edge transitions. | Use Scenario: Limiting input voltage swing at PHY receiver inputs in legacy Ethernet hubs and NICs. IC Role / Device Role: Signal steering and overvoltage clamp in differential pair termination networks. Use Value: 75 V VRWM withstands induced surges on unshielded twisted-pair cabling; DO-35 footprint allows dense layout near RJ-45 magnetics. |
| High-Density Memory Address Decoding | Core Driver Switching in Legacy Systems |
Use Scenario: Enabling fast address line gating in plated-wire or thin-film memory modules. IC Role / Device Role: High-speed logic-level selector isolating memory banks during read/write cycles. Use Value: Sub-5 ns trr supports >20 MHz address strobe rates; low CJ avoids capacitive loading of multiplexed bus lines. | Use Scenario: Driving magnetic core memory elements in avionics or test equipment control boards. IC Role / Device Role: Pulse-forming switch in current-mode driver stages with tight timing margins. Use Value: Stable VF and TJ range ensure repeatable pulse amplitude across –40 °C to +85 °C ambient; DO-35 leads accommodate manual rework. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148WS-7-F | Same 75 V VRWM and 4 ns trr, but SOD-323 surface-mount package (1.7 × 1.3 mm); 3.5 pF CJ. | Requires PCB redesign for SMT assembly; unsuitable for through-hole prototyping or high-reliability leaded sockets. | Select when board space is constrained and automated pick-and-place is available. |
| 1N4448-1 | Identical DO-35 package, same 75 V VRWM and 4 ns trr, but VF specified at 100 mA (1.0 V) vs. 1N4447/TR at 10 mA - identical electrical behavior under typical signal-level loads. | No functional difference in clamping, steering, or interface roles; interchangeable in all documented designs. | Choose based on stock availability or screening grade preference (e.g., JANTXV variants). |
Compared with 1N4447/TR, the 1N4148WS-7-F offers space savings at the cost of assembly flexibility, while the 1N4448-1 provides direct form-fit-function equivalence with no design change required.
Availability
1N4447/TR is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10 Base-T receiver clamping, and high-density memory decoding requiring stable component supply, long-lifecycle support, and MIL-PRF-19500 screening capability.
Supply support for 1N4447/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N4447/TR belongs to Microsemi's legacy JEDEC-registered switching diode family designed for high-speed signal integrity in ruggedized communications and computing infrastructure where hermetic reliability and MIL-spec screening are mandatory.
FAQ
What is the maximum reverse recovery time specified for the 1N4447/TR?
The 1N4447/TR has a maximum reverse recovery time (trr) of 4 ns at 10 mA forward current and 4 V reverse voltage, measured per standard JEDEC test conditions. This value is confirmed in the Electrical Characteristics table on page 2 of Microsemi's T4-LDS-0239 datasheet. The 4 ns trr makes the 1N4447/TR suitable for use in high-speed digital interfaces up to ~25 MHz without introducing timing skew or signal degradation.
Does the 1N4447/TR meet MIL-PRF-19500 requirements?
The 1N4447/TR is offered with optional screening per MIL-PRF-19500, as stated in the Features section of the T4-LDS-0239 datasheet. Screening levels (e.g., JAN, JANTX, JANTXV) are indicated via part nomenclature suffixes - the base 1N4447/TR is commercial-grade, but variants like 1N4447-1 (with MQ/MX/MV prefixes) fulfill MIL-PRF-19500 requirements including environmental stress screening and lot traceability. Always verify the full part number's screening designation before specifying for military use.
What is the junction capacitance of the 1N4447/TR and why does it matter?
The 1N4447/TR exhibits a junction capacitance (CJ) of 4 pF at 0 V reverse bias, as published in the Electrical Characteristics table. This low capacitance minimizes signal loading on high-impedance, high-frequency nodes - critical for maintaining rise/fall times in RS-232 receivers, Ethernet 10 Base-T termination networks, and memory address decoders. Exceeding 5 pF would risk data-dependent jitter or bandwidth reduction in these applications.
Can the 1N4447/TR replace the 1N4148 in existing designs?
The 1N4447/TR shares identical key parameters with the 1N4148 - 75 V VRWM, 4 ns trr, 4 pF CJ, and DO-35 package - and is functionally interchangeable in most signal-switching applications. However, the 1N4447/TR is explicitly qualified for MIL-PRF-19500 screening and features metallurgical bonding, offering superior long-term reliability in thermally stressed or high-vibration environments compared to standard 1N4148 variants. Review screening requirements before substitution.
What is the forward voltage drop of the 1N4447/TR at typical operating current?
The 1N4447/TR has a forward voltage (VF) of 1.0 V at 10 mA forward current, as specified in the Electrical Characteristics table. At higher currents (e.g., 100 mA), VF remains ≤1.0 V, ensuring low power loss during clamping or steering operations. This predictable VF supports accurate voltage margining in logic-level translation circuits and reduces thermal stress in compact layouts where multiple 1N4447/TR devices operate simultaneously.
1N4447/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 20 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 25 nA @ 20 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4447/TR FAQ
1.How can I place an order for 1N4447/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4447/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4447/TR reliable?
The price and inventory of 1N4447/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4447/TR is usually 5 days.
3.What payment methods are accepted for 1N4447/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4447/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4447/TR?
1N4447/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4447/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4447/TR?
For technical support, including 1N4447/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4447/TR requirements.
6.How does Aetrix verify that 1N4447/TR is sourced from the original manufacturer or authorized distributors?
All 1N4447/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4447/TR meets industry standards.
7.What is the process for return or replacement of 1N4447/TR?
All 1N4447/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4447/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4447/TR part is unused and in its original packaging.
Return procedure for 1N4447/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4447/TR Tags
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