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NXP Semiconductors 1N4448,113

Part No.:
1N4448,113
Manufacturer:
NXP Semiconductors
Category:
Single Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N4448,113.pdf
Description:
DIODE GEN PURP 100V 200MA ALF2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,102

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Product details

Overview

1N4448,113 from Nexperia is a high-speed switching diode in a hermetically sealed glass SOD27 (DO-35) package, rated for 100 V repetitive peak reverse voltage, 450 mA repetitive peak forward current, and 4 ns maximum reverse recovery time. It serves as a fast signal-level clamp or logic-level translator in digital timing circuits and low-power analog front-ends.

For engineers reviewing the 1N4448,113 datasheet, 1N4448,113 pinout, 1N4448,113 application, or 1N4448,113 equivalent, key selection criteria include its 0.62–0.72 V forward voltage at 5 mA, 3 µA max reverse leakage at 100 °C and 20 V, 4 pF capacitance at 0 V, and thermal resistance of 350 K/W junction-to-ambient - all critical for high-frequency signal integrity and thermal-limited PCB layouts.

Technical Context

The 1N4448,113 is fabricated using planar silicon technology and optimized for rapid charge removal during reverse-biased transitions. Its 4 ns trr and low stored charge enable reliable operation in 10–100 MHz clock steering, pulse shaping, and sample-and-hold discharge paths.

Unlike general-purpose rectifiers, it features tightly controlled VF (0.62–0.72 V @ 5 mA) and ultra-low IR (≤3 µA @ 100 °C), making it suitable for precision clamping where forward threshold stability and leakage-induced offset must be minimized across temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM100 V - supports rail-to-rail signal clamping up to ±100 V without breakdown
trr4 ns - enables clean edge transitions in >25 MHz digital waveforms
VF @ 5 mA0.62–0.72 V - ensures predictable logic-level shifting with minimal voltage drop
IR @ 20 V, 100 °C≤3 µA - prevents thermal runaway and DC offset drift in high-temp bias networks
Cd @ 0 V, 1 MHz≤4 pF - minimizes capacitive loading on RF-sensitive nodes and high-Z inputs
Ptot @ 25 °C500 mW - allows continuous operation at 200 mA DC in standard FR4 layouts

Pinout & Package

Package: Hermetically sealed axial-leaded glass SOD27 (DO-35); cathode indicated by black band; leads tinned for solderability; RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Anode (unbanded end)Forward current entry pointConnects to higher-potential node during conduction; requires trace width ≥0.3 mm for 200 mA continuous
Cathode (banded end)Forward current exit / reverse blocking terminalGround or reference node connection; band orientation must match silkscreen polarity marking

Key Features

FeatureDesign Value
High-speed switching4 ns reverse recovery enables use in >25 MHz clock distribution and data line clamping
Tight forward voltage tolerance0.62–0.72 V at 5 mA supports consistent logic threshold translation across batches
Low reverse leakage≤3 µA at 100 °C ensures stable DC bias points in thermally stressed sensor interfaces
Hermetic glass packageSOD27 construction provides long-term moisture resistance and parameter stability over 10+ year deployments

Applications

Digital Logic ClampingRF Signal Detection

Use Scenario: Protecting CMOS input pins from ESD-induced overshoot in UART/USB level-shifting circuits.

IC Role / Device Role / Timing Role: Fast clamping diode shunting transient energy to VCC or GND before IC damage occurs.

Use Value: 4 ns trr and ≤4 pF Cd prevent signal distortion while maintaining sub-10 ns response to transients.

Use Scenario: Envelope detection in 10–50 MHz IF stages of AM receivers and RFID readers.

IC Role / Device Role / Timing Role: Low-capacitance, low-VF detector diode converting RF amplitude to baseband DC.

Use Value: 0.62–0.72 V VF improves sensitivity at low input power; 4 pF Cd preserves Q-factor in tuned tank circuits.

Pulse Width Modulation (PWM) SnubbingSample-and-Hold Discharge

Use Scenario: Suppressing inductive kickback spikes across MOSFET gate drivers in motor control H-bridges.

IC Role / Device Role / Timing Role: Freewheeling path for flyback current during switch-off transitions.

Use Value: 450 mA IFRM and 4 ns trr ensure rapid current redirection without oscillation or shoot-through risk.

Use Scenario: Rapid discharge of hold capacitor between ADC sampling cycles in data acquisition systems.

IC Role / Device Role / Timing Role: Precision discharge switch enabling <100 ns reset times with minimal residual voltage.

Use Value: Predictable 0.62–0.72 V VF allows accurate modeling of discharge time constant; low IR avoids capacitor recharge errors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4148,113Higher VF (1.0 V max @ 10 mA); 25 nA IR @ 25 °C vs. 3 µA @ 100 °C for 1N4448,113Better leakage performance at room temp; less stable at elevated tempSelect when ambient operating temperature stays below 60 °C and ultra-low IR is prioritized
BAS16,215Smaller SOT23 package; 3 ns trr; 1 A IFSM; VF = 0.85 V @ 50 mASurface-mount compatible; higher surge rating but larger forward drop at high currentSelect for space-constrained PCBs requiring automated assembly and higher transient robustness

Compared with 1N4448,113, the 1N4148,113 offers lower room-temperature leakage but degrades faster above 85 °C, while the BAS16,215 delivers superior speed and surge handling in SMT form - making the 1N4448,113 optimal for through-hole, thermally stable, medium-speed clamping where legacy DO-35 fitment is required.

Availability

1N4448,113 is available at Aetrix Electronics and suitable for digital logic protection, RF envelope detection, PWM snubbing, and sample-and-hold discharge applications requiring stable component supply across industrial and communications product lifecycles.

Supply support for 1N4448,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The 1N4448,113 belongs to Nexperia's high-speed diode family designed specifically for fast-switching signal conditioning in computing, consumer, and industrial electronics where reliability, consistency, and proven DO-35 manufacturability are essential.

FAQ

What is the maximum reverse recovery time specified for the 1N4448,113?

The 1N4448,113 has a maximum reverse recovery time (trr) of 4 ns when switched from IF = 10 mA to IR = 60 mA with RL = 100 Ω and measured at IR = 1 mA. This value is confirmed in the official Nexperia datasheet and reflects worst-case performance under standardized test conditions - critical for validating timing margins in high-frequency digital interfaces using the 1N4448,113.

Does the 1N4448,113 have a specified forward voltage range at low current?

Yes - the 1N4448,113 specifies a forward voltage range of 0.62 V to 0.72 V at IF = 5 mA and Tj = 25 °C. This tight VF window ensures repeatable clamping thresholds in precision analog and mixed-signal circuits, distinguishing it from broader-spec diodes like the 1N4148,113. The 1N4448,113 maintains this specification across production lots per Nexperia's quality controls.

What is the cathode identification method for the 1N4448,113?

The cathode of the 1N4448,113 is marked by a distinct black band on the glass body of the SOD27 (DO-35) package. This band aligns with industry-standard polarity marking for axial-leaded diodes and must be oriented toward the lower-potential node (e.g., GND or VREF) in circuit layout. The 1N4448,113 uses no alphanumeric marking beyond the type number "1N4448" laser-etched on the body.

Is the 1N4448,113 suitable for automotive applications?

The 1N4448,113 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. While it operates reliably from −65 °C to +200 °C junction temperature and meets industrial-grade reliability standards, Nexperia positions it for computing, consumer, and industrial applications - not automotive ECUs or ADAS modules. For automotive use, consider AEC-Q101-certified alternatives such as the PMEG4010CPA.

What thermal resistance does the 1N4448,113 exhibit in standard mounting?

The 1N4448,113 exhibits a junction-to-ambient thermal resistance (Rth(j-a)) of 350 K/W when mounted on an FR4 PCB with 10 mm lead length and no metallization pad. This value directly determines allowable continuous forward current versus ambient temperature - for example, at 70 °C ambient, the 1N4448,113 supports ~140 mA continuous conduction before reaching its 200 °C max junction limit.

1N4448,113 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
25 nA @ 20 V
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ALF2
Operating Temperature - Junction:
200°C (Max)

1N4448,113 FAQ

1.How can I place an order for 1N4448,113 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N4448,113 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N4448,113 reliable?

The price and inventory of 1N4448,113 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4448,113 is usually 5 days.

3.What payment methods are accepted for 1N4448,113?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4448,113 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N4448,113?

1N4448,113 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N4448,113 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N4448,113?

For technical support, including 1N4448,113 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4448,113 requirements.

6.How does Aetrix verify that 1N4448,113 is sourced from the original manufacturer or authorized distributors?

All 1N4448,113 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4448,113 meets industry standards.

7.What is the process for return or replacement of 1N4448,113?

All 1N4448,113 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4448,113, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N4448,113 part is unused and in its original packaging.

Return procedure for 1N4448,113:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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