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Nexperia USA Inc. 1N4448,133
- Part No.:
- 1N4448,133
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4448,133.pdf
- Description:
- DIODE GEN PURP 100V 200MA ALF2
- Quantity:
- Payment:
- Shipping:
Inventory:2,363
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Product details
Overview
1N4448,133 from NXP Semiconductors is a high-speed switching diode in a hermetically sealed SOD27 (DO-35) glass package, rated for 100 V repetitive peak reverse voltage, 450 mA repetitive peak forward current, and 4 ns maximum reverse recovery time. It serves as a fast signal-level clamp or logic-level translator in digital timing circuits and pulse shaping networks.
For engineers reviewing the 1N4448,133 datasheet, 1N4448,133 pinout, 1N4448,133 application, or 1N4448,133 equivalent, key selection criteria include verified trr ≤ 4 ns, VF = 0.62–0.72 V at IF = 5 mA, IR ≤ 3 µA at VR = 20 V and Tj = 100 °C, and thermal resistance Rth(j-a) = 350 K/W on FR4 PCB with 10 mm leads.
Technical Context
The 1N4448,133 employs planar silicon junction technology optimized for rapid carrier recombination, enabling sub-4 ns reverse recovery under standardized IF = 10 mA → IR = 60 mA switching conditions with RL = 100 Ω load. Its low diode capacitance (≤ 4 pF at VR = 0 V, f = 1 MHz) supports RF and high-frequency digital edge integrity.
Designed for ambient operation up to +150 °C junction temperature, it maintains stable leakage performance (IR ≤ 50 µA at VR = 20 V, Tj = 150 °C) and delivers 200 mA continuous forward current at Tamb = 25 °C, derating linearly to zero at ~175 °C per Fig.2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - Maximum repetitive reverse voltage before breakdown; defines safe blocking range in clamping or flyback applications. |
| trr | 4 ns - Measured reverse recovery time under IF = 10 mA → IR = 60 mA, RL = 100 Ω; enables >100 MHz switching in logic interfaces. |
| VF @ 5 mA | 0.62–0.72 V - Forward voltage window at low-signal current; ensures minimal voltage drop in level-shifting and sampling circuits. |
| IR @ 20 V, 100 °C | 3 µA - Reverse leakage at elevated temperature; critical for low-power standby and precision bias networks. |
| Cd @ 0 V | 4 pF - Junction capacitance at zero bias; limits parasitic loading in >100 MHz clock distribution paths. |
| Ptot | 500 mW - Total power dissipation at Tamb = 25 °C; sets thermal design margin for continuous conduction in compact layouts. |
Pinout & Package
Hermetically sealed axial-leaded SOD27 (DO-35) glass package with cathode indicated by a band; leads are tinned copper, suitable for wave or hand soldering. Dimensions: D = 4.25 mm max, L = 25.4 mm min, b = 0.56 mm max, G1 = 1.85 mm max.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in forward-biased operation; must handle 450 mA peak surge without metallization lift. |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; sustains 100 V reverse bias; anchors reference for clamping thresholds and ESD protection paths. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables clean edge transitions in TTL/CMOS interfacing and pulse generation up to 100 MHz. |
| Low forward voltage | VF = 0.62–0.72 V at 5 mA reduces signal attenuation in analog sampling and logic threshold detection. |
| Stable high-temp leakage | IR ≤ 3 µA at VR = 20 V and Tj = 100 °C ensures reliability in automotive under-hood and industrial control environments. |
| Hermetic glass sealing | SOD27 package prevents moisture ingress and long-term parameter drift, supporting >10-year field life in sealed assemblies. |
Applications
| Digital Logic Clamping | Pulse Shaping Network |
|---|---|
Use Scenario: Clamp input transients on 74HC-series logic inputs to prevent latch-up during ESD events. IC Role / Device Role / Timing Role: Fast-turn-on shunt diode limiting voltage excursion to VF + VCC. Use Value: 4 ns trr ensures transient energy is diverted before logic gate threshold is exceeded, preserving data integrity. | Use Scenario: Sharpen rising/falling edges of 50 MHz clock signals driving multiple fanout loads. IC Role / Device Role / Timing Role: AC-coupled clipping diode in passive differentiator-integrator topology. Use Value: 4 pF Cd minimizes high-frequency attenuation while 0.62 V VF establishes precise clipping threshold. |
| Sample-and-Hold Biasing | High-Speed Level Translation |
Use Scenario: Provide low-leakage hold capacitor discharge path in 12-bit SAR ADC front-end. IC Role / Device Role / Timing Role: Precision reset switch with controlled turn-off delay. Use Value: IR ≤ 3 µA at 100 °C prevents capacitor droop during 10 µs hold period, maintaining ±0.5 LSB accuracy. | Use Scenario: Translate 3.3 V LVCMOS logic to 5 V TTL-compatible levels in mixed-voltage microcontroller systems. IC Role / Device Role / Timing Role: Passive level shifter using forward voltage offset. Use Value: Tight VF tolerance (0.62–0.72 V) yields consistent 2.58–2.68 V output swing, meeting TTL VIH minimum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148,133 | VF = 1.0 V @ IF = 10 mA; trr ≤ 4 ns; IR = 25 nA @ VR = 20 V, 25 °C | Higher VF increases logic-low margin; lower IR improves low-power bias stability | Select when ultra-low leakage at room temperature is prioritized over forward loss. |
| BAS16,215 | VF = 1.25 V @ IF = 50 mA; trr ≤ 4 ns; SOT23 package; Rth(j-a) = 300 K/W | Surface-mount format enables denser layout; higher VF demands tighter supply headroom | Choose for automated assembly and space-constrained PCBs where thermal pad access is available. |
Compared with 1N4148,133 and BAS16,215, the 1N4448,133 offers the lowest VF at low currents (5 mA), making it optimal for battery-powered signal conditioning, while its axial DO-35 form supports through-hole prototyping and high-reliability mechanical retention.
Availability
1N4448,133 is available at Aetrix Electronics and suitable for digital logic clamping, pulse shaping networks, sample-and-hold biasing, and high-speed level translation requiring stable component supply across industrial control, test instrumentation, and embedded communications designs.
Supply support for 1N4448,133 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, delivering secure, scalable solutions for automotive, industrial, IoT, and communication infrastructure markets.
The 1N4448,133 belongs to NXP's legacy discrete portfolio targeting cost-sensitive, high-volume signal integrity applications where proven reliability and tight parametric consistency outweigh advanced packaging.
FAQ
What is the maximum junction temperature rating for the 1N4448,133?
The absolute maximum junction temperature (Tj) is 200 °C, as specified in the Limiting Values table. Operation above this threshold risks permanent degradation of the planar junction structure and accelerated leakage growth. Derating curves in Fig.2 confirm usable continuous forward current drops to zero near 175 °C ambient on standard FR4.
Is the 1N4448,133 suitable for use in RF detector circuits?
Yes - its 4 pF diode capacitance at zero bias and 4 ns reverse recovery support RF envelope detection up to ~500 MHz when paired with appropriate impedance-matching and filtering. However, its non-optimized doping profile limits sensitivity compared to Schottky detectors like BAT54, especially below −20 dBm input.
How does the 1N4448,133 differ from the 1N4148,133 in forward voltage behavior?
At 5 mA forward current, the 1N4448,133 specifies VF = 0.62–0.72 V, whereas the 1N4148,133 specifies VF ≤ 1.0 V at 10 mA. This reflects tighter low-current VF control in the 1N4448, making it preferable for precision biasing and low-power sampling where sub-0.75 V drop is required.
Can the 1N4448,133 be used as a replacement for Zener diodes in voltage reference applications?
No - it lacks controlled reverse breakdown characteristics. The 1N4448,133 is rated only for 100 V reverse blocking, not regulated Zener conduction. Using it in reverse bias beyond VR = 100 V risks uncontrolled avalanche and parameter shift. For references, dedicated Zeners like BZX55C5V1 or TL431-based circuits are required.
1N4448,133 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Cut Tape (CT)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 25 nA @ 20 V
- Capacitance @ Vr, F:
- 4pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ALF2
- Operating Temperature - Junction:
- 200°C (Max)
1N4448,133 FAQ
1.How can I place an order for 1N4448,133 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4448,133 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4448,133 reliable?
The price and inventory of 1N4448,133 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4448,133 is usually 5 days.
3.What payment methods are accepted for 1N4448,133?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4448,133 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4448,133?
1N4448,133 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4448,133 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4448,133?
For technical support, including 1N4448,133 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4448,133 requirements.
6.How does Aetrix verify that 1N4448,133 is sourced from the original manufacturer or authorized distributors?
All 1N4448,133 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4448,133 meets industry standards.
7.What is the process for return or replacement of 1N4448,133?
All 1N4448,133 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4448,133, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4448,133 part is unused and in its original packaging.
Return procedure for 1N4448,133:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4448,133 Tags
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