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Diodes Incorporated 1N4448HWS-7-F
- Part No.:
- 1N4448HWS-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
1N4448HWS-7-F.pdf
- Description:
- DIODE GEN PURP 80V 250MA SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:21,876
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Product details
Overview
1N4448HWS from Diodes Incorporated is a surface-mount fast-switching silicon signal diode in SOD323 package, rated for 80 V peak repetitive reverse voltage, 500 mA forward surge current, and 4.0 ns reverse recovery time. It delivers high conductance with 0.72 V forward voltage at 10 mA and supports general-purpose switching in compact PCB layouts.
For engineers reviewing the 1N4448HWS datasheet, 1N4448HWS pinout, 1N4448HWS application, or 1N4448HWS equivalent, key selection criteria include reverse recovery speed, low forward voltage at low-to-moderate currents, thermal derating behavior up to +150°C, and compatibility with automated SMT assembly using standard reflow profiles for moisture sensitivity level 1.
Technical Context
This diode operates as a unidirectional, low-capacitance (≤3.5 pF at 0 V), fast-recovery rectifier optimized for high-frequency signal routing and clamping. Its 4.0 ns trr and 80 V VRRM support clean edge transitions in digital logic interfaces and pulse conditioning circuits.
The device uses an alloy-42 leadframe with matte tin plating, enabling reliable solderability per MIL-STD-202, Method 208. Thermal resistance of 625°C/W (junction-to-ambient, FR-4 board) defines its power handling under natural convection conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 80 V - Maximum repetitive reverse voltage before breakdown; sets safe operating limit in clamp or flyback paths. |
| trr | 4.0 ns - Measured at IF = IR = 10 mA, Irr = 0.1 × IR; enables use in >100 MHz switching nodes without tail current distortion. |
| VF @ 10 mA | 0.72 V - Forward drop at typical logic-level drive current; minimizes voltage loss in signal-level rectification. |
| CT @ 0 V | 3.5 pF - Junction capacitance at zero bias; ensures minimal signal coupling in RF detector or sampling applications. |
| RθJA | 625 °C/W - Thermal resistance on FR-4 with recommended pad layout; defines derating slope (200 mW → 0 mW over 0–125°C ambient). |
| IFSM | 4.0 A - Non-repetitive surge rating at 1.0 μs pulse; supports ESD transient suppression in I/O protection networks. |
Pinout & Package
Package: SOD323 - ultra-compact surface-mount plastic case (1.30 mm × 1.70 mm × 0.90 mm), moisture sensitivity level 1, RoHS-compliant "Green" molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in forward-biased operation; requires thermal relief on copper pour for soldering reliability. |
| Cathode | Forward current exit / reverse-blocking terminal | Marked by cathode band; ties to higher-potential node during conduction; serves as clamping reference in protection circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | 4.0 ns reverse recovery time enables clean signal edge preservation in 50–200 MHz clock distribution and data line clamping. |
| Low forward voltage | 0.72 V at 10 mA reduces insertion loss in analog switch and sample-hold front-ends where voltage headroom is constrained. |
| SOD323 footprint | 1.30 mm × 1.70 mm body size allows dense placement in space-limited IoT sensor modules and portable power management IC interfaces. |
| High-temperature operation | Rated for −55°C to +150°C junction temperature; maintains stable leakage (<30 µA at VR = 25 V, TJ = +150°C) in under-hood automotive modules. |
Applications
| Logic-Level Clamping | Digital Signal Conditioning |
|---|---|
Use Scenario: Protecting CMOS input pins from overshoot/undershoot during hot-plug events in USB or UART interfaces. IC Role / Device Role / Timing Role: Fast clamping diode shunting transients to VCC or GND rails. Use Value: 4.0 ns trr prevents latch-up by limiting transient duration below CMOS input immunity threshold. |
Use Scenario: Level-shifting and waveform sharpening in FPGA configuration JTAG chains. IC Role / Device Role / Timing Role: Signal steering diode in passive level translation networks. Use Value: Low CT (≤3.5 pF) avoids signal rise-time degradation on 10–50 MHz TCK/TMS lines. |
| DC-DC Converter Snubbing | RF Detector Circuits |
Use Scenario: Suppressing voltage spikes across synchronous rectifier MOSFETs in buck converters operating at 500 kHz–2 MHz. IC Role / Device Role / Timing Role: Snubber diode absorbing turn-off energy in RCD networks. Use Value: 80 V VRRM and 4.0 ns trr ensure reliable clamping without oscillation in high-dV/dt environments. |
Use Scenario: Demodulating AM signals in low-power ISM-band receivers (e.g., 315 MHz, 433 MHz). IC Role / Device Role / Timing Role: Envelope detection diode in passive crystal radio-style front-ends. Use Value: 3.5 pF CT and sub-1 V VF enable efficient RF-to-DC conversion with minimal loading on tank circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W-7-F | Same SOD-123 package; 4.0 ns trr; 100 V VRRM; VF = 0.72 V @ 10 mA; higher RθJA (750°C/W). | Higher reverse voltage margin but larger footprint (2.7 mm × 1.3 mm); less suitable for ultra-dense layouts. | Select when higher VRRM is required and board space permits larger package. |
| BAT54C-7-F | SOD-323 package; dual common-cathode Schottky; VF = 0.33 V @ 10 mA; trr not specified (Schottky = inherently fast); VRRM = 30 V. | Lower VF improves efficiency in low-voltage rail clamping; limited to ≤30 V systems due to lower blocking voltage. | Select for <30 V applications prioritizing ultra-low VF over high-voltage robustness. |
Compared with 1N4148W-7-F, the 1N4448HWS offers tighter board area usage and better thermal performance on FR-4; compared with BAT54C-7-F, it provides higher reverse voltage capability at the cost of slightly higher VF and absence of Schottky soft recovery.
Availability
1N4448HWS is available at Aetrix Electronics and suitable for logic-level clamping, digital signal conditioning, DC-DC snubbing, and RF detector circuits requiring stable component supply, consistent parametric performance, and full RoHS/Green compliance.
Supply support for 1N4448HWS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for industrial, computing, consumer, and automotive markets.
The 1N4448HWS belongs to Diodes' general-purpose fast-switching diode product line, engineered for precision timing integrity and low-loss signal routing in space-constrained, high-frequency electronic systems.
FAQ
Is the 1N4448HWS suitable for automotive applications?
No - the standard 1N4448HWS is not AEC-Q101 qualified. For automotive use, Diodes specifies the 1N4448HWSQ-7-F variant, which undergoes additional change control, PPAP documentation, and manufacturing in IATF16949-certified facilities. The base part lacks formal automotive qualification evidence.
What is the maximum continuous forward current rating?
The 1N4448HWS has an average rectified output current (IO) rating of 250 mA under specified thermal conditions. This is distinct from its 500 mA forward continuous current (IFM) rating, which applies only to non-repetitive pulses. Continuous operation must respect the 200 mW power dissipation limit and thermal derating curve.
Does the SOD323 package require special reflow profile considerations?
Yes - the 1N4448HWS is rated moisture sensitivity level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH without baking. However, its small thermal mass demands precise reflow profiling: peak temperature must not exceed 260°C, and time above 217°C should be 60–90 seconds to avoid delamination or voiding while ensuring complete solder joint formation.
How does reverse leakage vary with temperature and voltage?
Reverse leakage rises exponentially with temperature and linearly with applied reverse voltage. At 25°C and 20 V VR, IR is ≤25 nA; at 150°C and 25 V VR, it increases to ≤30 µA. This behavior is confirmed in Figure 3 of DS30196 and must be accounted for in high-impedance bias networks or precision reference circuits.
1N4448HWS-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 80 V
- Capacitance @ Vr, F:
- 3.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4448HWS-7-F FAQ
1.How can I place an order for 1N4448HWS-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4448HWS-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4448HWS-7-F reliable?
The price and inventory of 1N4448HWS-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4448HWS-7-F is usually 5 days.
3.What payment methods are accepted for 1N4448HWS-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4448HWS-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4448HWS-7-F?
1N4448HWS-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4448HWS-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4448HWS-7-F?
For technical support, including 1N4448HWS-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4448HWS-7-F requirements.
6.How does Aetrix verify that 1N4448HWS-7-F is sourced from the original manufacturer or authorized distributors?
All 1N4448HWS-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4448HWS-7-F meets industry standards.
7.What is the process for return or replacement of 1N4448HWS-7-F?
All 1N4448HWS-7-F units undergo pre-shipment inspection (PSI). If there is an issue with 1N4448HWS-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4448HWS-7-F part is unused and in its original packaging.
Return procedure for 1N4448HWS-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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