Diodes Incorporated 1N4448HWSQ-7-F

Overview

1N4448HWSQ-7-F from Diodes Incorporated is a surface-mount fast-switching silicon signal diode in SOD323 package, rated for 80 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers high conductance with 0.72 V forward voltage at 10 mA and supports automotive-grade reliability via AEC-Q101 qualification, IATF16949 manufacturing, and PPAP capability.

For engineers reviewing the 1N4448HWSQ-7-F datasheet, 1N4448HWSQ-7-F pinout, 1N4448HWSQ-7-F application, or 1N4448HWSQ-7-F equivalent, key selection criteria include fast switching performance (trr ≤ 4.0 ns), low forward voltage drop at low-to-moderate currents, thermal robustness (−55°C to +150°C), and automotive-compliant traceability and change control.

Technical Context

This diode operates as a unidirectional signal-level switching and clamping device in high-speed digital and analog circuits. Its design emphasizes rapid carrier recombination-evidenced by trr = 4.0 ns under IF = IR = 10 mA, RL = 100 Ω-to minimize switching distortion in pulse shaping, waveform clipping, and logic-level translation.

It exhibits low junction capacitance (CT ≤ 3.5 pF at VR = 0 V, f = 1 MHz) and stable reverse leakage (IRM ≤ 25 nA at VR = 20 V), enabling reliable operation in RF detector, sample-and-hold, and high-frequency bias networks where parasitic capacitance and leakage must be tightly controlled.

Key Specifications

Pinout & Package

Package: SOD323 - ultra-compact 2-pin surface-mount plastic package (1.30 mm × 1.70 mm × 0.95 mm), moisture sensitivity level 1, matte tin-plated alloy 42 leadframe, cathode band polarity marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching diode applications.

Compared with BAT54C-7-F and 1N4148W-7-F, the 1N4448HWSQ-7-F uniquely combines automotive qualification, guaranteed 4.0 ns max trr, and 80 V blocking in SOD323-making it the only option for space-constrained, high-reliability 12–24 V automotive signal conditioning.

Availability

1N4448HWSQ-7-F is available at Aetrix Electronics and suitable for automotive signal clamping, high-speed logic interface, and RF detector applications requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 1N4448HWSQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for automotive, industrial, and computing markets.

The 1N4448HWSQ-7-F belongs to Diodes' AEC-Q101-qualified fast-switching diode product line, engineered specifically for automotive signal integrity, ESD protection, and high-frequency clamping in harsh-environment electronic control units.

FAQ

Is the 1N4448HWSQ-7-F pin-compatible with the standard 1N4148?

No. While functionally similar, the 1N4448HWSQ-7-F uses the SOD323 package (1.30 mm × 1.70 mm), whereas the legacy 1N4148 typically uses DO-35 or SOD-123. Footprint and solder pad layout differ significantly-SOD323 requires narrower pitch and smaller copper land patterns per Diodes' recommended pad layout.

What is the maximum junction temperature during continuous operation at 250 mA?

At 250 mA forward current and ambient temperature of 25°C, power dissipation is ~180 mW (using VFM ≈ 0.72 V). With RθJA = 625°C/W, junction temperature rise is ~113°C, resulting in TJ ≈ 138°C-within the −55°C to +150°C rating. Derating per Figure 1 applies above 25°C ambient.

Does the "Q" suffix guarantee full PPAP documentation?

Yes. The "Q" in 1N4448HWSQ-7-F explicitly denotes AEC-Q101 qualification and PPAP capability. Diodes provides full PPAP Level 3 documentation-including part submission warrant, design records, process flow diagrams, PFMEA, and test reports-upon request for qualified customers.

Can this diode replace Schottky diodes in 3.3 V rail clamping?

Not optimally. While its 0.72 V VF at 10 mA is acceptable, Schottky diodes (e.g., BAT54) offer lower VF (~0.3 V) and faster switching in low-voltage, low-loss applications. The 1N4448HWSQ-7-F excels where higher reverse voltage (80 V) and temperature stability (>125°C) outweigh ultra-low VF requirements.