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Diodes Incorporated 1N4448-T
- Part No.:
- 1N4448-T
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4448-T.pdf
- Description:
- DIODE GEN PURP 75V 150MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:5,543
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Product details
Overview
1N4448-T from Diodes Incorporated is a fast-switching silicon epitaxial planar diode in DO-35 glass package, rated for 75 V peak repetitive reverse voltage, 500 mA forward continuous current, and 4.0 ns reverse recovery time. It serves as a general-purpose rectifier and signal clamping device in high-speed digital logic interfaces and low-power analog signal conditioning circuits.
For engineers reviewing the 1N4448-T datasheet, 1N4448-T pinout, 1N4448-T application, or 1N4448-T equivalent, key selection criteria include its 4.0 ns trr at IF = 10 mA → IR = 1 mA, 0.72 V max VFM at IF = 5.0 mA, 50 nA max IRM at VR = 20 V, DO-35 mechanical compatibility, and RoHS-compliant Sn96.5Ag3.5 termination.
Technical Context
The 1N4448-T operates as a unidirectional PN junction diode with cathode-band polarity marking. Its epitaxial planar construction enables low stored charge and rapid carrier recombination, directly supporting sub-10 ns switching transitions in TTL/CMOS interface protection and waveform shaping.
Thermal performance is defined by 300 °C/W junction-to-ambient thermal resistance and a -65 °C to +175 °C operating temperature range. The device sustains 2.0 A non-repetitive peak forward surge current (t = 1.0 μs) and exhibits 4.0 pF total capacitance at 0 V bias and 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRM / VRRM | 75 V - Maximum allowable repetitive reverse voltage before breakdown; sets safe operating margin in 5–24 V rail clamp designs. |
| IFM | 500 mA - Continuous forward current limit; supports sustained operation in low-current logic-level signal routing. |
| trr | 4.0 ns - Measured from 10 mA forward to 1 mA reverse under 6 V VR and 100 Ω load; enables use in >10 MHz clock line steering. |
| VFM (max) | 0.72 V @ IF = 5.0 mA - Forward voltage threshold defining conduction loss in low-voltage bias networks and level-shifting paths. |
| IRM (max) | 50 nA @ VR = 20 V - Reverse leakage magnitude affecting high-impedance sample-hold and sensor bias stability. |
| CT | 4.0 pF @ VR = 0 V, f = 1 MHz - Junction capacitance limiting high-frequency signal coupling and bandwidth in RF detector front-ends. |
Pinout & Package
DO-35 glass axial package with cathode band marking; 0.13 g mass; moisture sensitivity level 1; Sn96.5Ag3.5 solderable leads per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node during conduction; defines directionality in clamping, steering, and OR-ing functions. |
| Cathode | Forward current exit point; marked with band | Reference terminal for reverse-bias applications; ties to ground or lower-potential rail in protection circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | 4.0 ns reverse recovery time enables reliable operation in 10–50 MHz digital signal routing and pulse shaping. |
| Low forward voltage | 0.72 V max at 5 mA ensures minimal voltage drop in low-power bias networks and logic-level translation paths. |
| Low leakage current | 50 nA max IRM at 20 V reverse bias preserves accuracy in high-impedance analog sensing and timing circuits. |
| DO-35 glass package | Hermetically sealed construction provides stable parametric performance across -65 °C to +175 °C ambient conditions. |
Applications
| Logic-Level Clamping | Digital Input Protection |
|---|---|
Use Scenario: Clamp TTL/CMOS input pins to prevent overvoltage transients exceeding VCC or dropping below GND. IC Role / Device Role / Timing Role: Signal-level shunt diode providing bidirectional transient suppression without loading active drivers. Use Value: 4.0 ns trr ensures clamping action completes within one-tenth of a typical 50 ns logic transition, minimizing metastability risk. | Use Scenario: Protect microcontroller GPIO pins from ESD and inductive kickback in industrial I/O modules. IC Role / Device Role / Timing Role: First-line passive protection element placed between connector and IC pad. Use Value: 75 V VRRM and 50 nA IRM allow robust 24 V system interfacing while maintaining negligible standby current draw. |
| Waveform Shaping | Low-Current Biasing |
Use Scenario: Generate precise square-wave edges from sine or triangle waveforms in function generator output stages. IC Role / Device Role / Timing Role: Fast edge detector and clipping element in analog signal conditioning paths. Use Value: 4.0 pF CT and 4.0 ns trr jointly preserve rise/fall time integrity up to 100 MHz fundamental frequencies. | Use Scenario: Provide stable bias current to photodiode amplifiers and precision reference dividers in portable instrumentation. IC Role / Device Role / Timing Role: Constant-current source component in high-impedance feedback networks. Use Value: 0.72 V VFM tolerance at 5 mA ensures predictable current setpoint with <±2% drift over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148-T | Lower IFM (300 mA), higher trr (4.0 ns same), identical DO-35 package | Suitable for ≤100 mA signal routing; less robust for surge-prone I/O lines | Select when cost sensitivity outweighs current headroom needs. |
| BAS16W-7-F | Surface-mount SOD-123, 100 V VRRM, 250 mA IFM, 4 ns trr | Requires PCB redesign; better for automated assembly but lower surge rating | Choose for space-constrained, high-volume production where reflow compatibility is critical. |
Compared with 1N4448-T, 1N4148-T offers reduced forward current capacity but identical switching speed and package; BAS16W-7-F trades axial through-hole fit for SMT scalability at the expense of surge immunity and thermal derating margin.
Availability
1N4448-T is available at Aetrix Electronics and suitable for logic-level clamping, digital input protection, and waveform shaping requiring stable component supply, consistent DO-35 mechanical form factor, and verified 4.0 ns switching performance.
Supply support for 1N4448-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-qualified components for automotive, industrial, and computing markets.
The 1N4448-T belongs to Diodes' legacy fast-switching diode product line, engineered specifically for high-speed signal integrity in logic interface, protection, and analog conditioning applications.
FAQ
What is the maximum reverse voltage rating for the 1N4448-T?
The 1N4448-T has a peak repetitive reverse voltage (VRRM) rating of 75 V. This value represents the highest continuous reverse-bias voltage the diode can block without entering avalanche breakdown under standard test conditions (TA = 25°C). Exceeding this rating risks irreversible junction damage.
How does the 1N4448-T differ from the 1N4148-T in forward current capability?
The 1N4448-T supports a maximum forward continuous current (IFM) of 500 mA, whereas the 1N4148-T is rated for 300 mA. This 200 mA difference reflects optimized doping and thermal design in the 1N4448-T's epitaxial structure, enabling higher sustained conduction in power-sensitive signal paths.
Is the 1N4448-T suitable for high-frequency RF detection?
Yes - with 4.0 pF junction capacitance at zero bias and 4.0 ns reverse recovery time, the 1N4448-T performs effectively in AM demodulation and RF envelope detection up to 100 MHz. Its low CT minimizes signal attenuation, and fast trr prevents distortion in modulated carrier recovery.
Does the 1N4448-T meet RoHS requirements?
Yes - the 1N4448-T features a lead-free finish compliant with EU Directive 2002/95/EC (RoHS), using Sn96.5Ag3.5 solderable terminations. Exemptions for glass encapsulation and high-temperature solder apply per Annex Notes 5 and 7 of the directive.
1N4448-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 150mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 75 V
- Capacitance @ Vr, F:
- 4pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-35
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4448-T FAQ
1.How can I place an order for 1N4448-T through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4448-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4448-T reliable?
The price and inventory of 1N4448-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4448-T is usually 5 days.
3.What payment methods are accepted for 1N4448-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4448-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4448-T?
1N4448-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4448-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4448-T?
For technical support, including 1N4448-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4448-T requirements.
6.How does Aetrix verify that 1N4448-T is sourced from the original manufacturer or authorized distributors?
All 1N4448-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4448-T meets industry standards.
7.What is the process for return or replacement of 1N4448-T?
All 1N4448-T units undergo pre-shipment inspection (PSI). If there is an issue with 1N4448-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4448-T part is unused and in its original packaging.
Return procedure for 1N4448-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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