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Diodes Incorporated 1N4448W-7-F
- Part No.:
- 1N4448W-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SOD-123
- Datasheet:
-
1N4448W-7-F.pdf
- Description:
- DIODE GEN PURP 75V 250MA SOD123
- Quantity:
- Payment:
- Shipping:
Inventory:55,566
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Product details
Overview
1N4448W-7-F from Diodes Incorporated is a fast-switching surface-mount silicon switching diode in SOD-123 package, rated for 75 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers high conductance with low forward voltage (0.72 V at 10 mA) and is widely used in signal routing, clamp protection, and high-frequency oscillator circuits.
For engineers reviewing the 1N4448W-7-F datasheet, 1N4448W-7-F pinout, 1N4448W-7-F application, or 1N4448W-7-F equivalent, key selection criteria include reverse recovery speed, thermal resistance (315 °C/W), junction temperature range (–55 to +150 °C), and SOD-123 footprint compatibility in space-constrained PCB layouts.
Technical Context
This diode employs a planar epitaxial construction optimized for rapid carrier recombination, enabling sub-4 ns reverse recovery under 10 mA test conditions (IF = IR = 10 mA, IRR = 0.1 × IR, RL = 100 Ω). Its low junction capacitance (4.0 pF at 0 V, 1 MHz) supports RF and digital timing applications.
The device operates across –55 °C to +150 °C and exhibits stable leakage performance: ≤2.5 μA at VR = 75 V (25 °C), rising to ≤50 μA at VR = 75 V and TJ = +150 °C - critical for high-temperature industrial and automotive-adjacent designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 75 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in clamp and flyback snubber circuits. |
| tRR | 4.0 ns - Measured under standardized 10 mA switching conditions; enables use in >100 MHz digital logic and pulse shaping networks. |
| VF @ 10 mA | 0.72 V - Low forward drop reduces conduction loss in signal-level rectification and level-shifting paths. |
| RθJA | 315 °C/W - Thermal resistance on FR-4 with 1″×1″ copper pad; determines derating curve slope (see Fig. 1) for ambient temperature design margins. |
| CT @ 0 V | 4.0 pF - Junction capacitance at zero bias; limits high-frequency insertion loss and phase shift in RF detector and mixer bias networks. |
| IFM | 500 mA - Continuous forward current rating; sets maximum DC or average current handling in power supply OR-ing and hold-up circuits. |
Pinout & Package
Package: SOD-123 - surface-mount, 2-terminal plastic-molded case (UL 94V-0), cathode indicated by band; dimensions: D = 1.55 mm, E = 2.65 mm, He = 3.65 mm, L = 0.30 mm (lead length), weight ≈ 0.01 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in forward-biased operation; requires trace width sufficient for 500 mA continuous current. |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Marked with visible band; ties to higher-potential node during conduction; serves as reference for clamp voltage threshold. |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | 4.0 ns tRR enables reliable operation in >100 MHz clock distribution and pulse edge sharpening. |
| High conductance | Low VF (0.62 V min @ 5 mA) improves signal integrity in analog switch and sample-hold front-ends. |
| SOD-123 package | Standardized footprint compatible with automated pick-and-place; supports 3000-unit tape-and-reel delivery (1N4448W-7-F). |
| JEDEC-qualified reliability | Qualified to AEC-Q101 stress test standards for discrete semiconductors; suitable for industrial-grade long-life deployments. |
Applications
| Signal Clamping in Data Lines | Digital Logic Level Translation |
|---|---|
Use Scenario: Protecting CMOS input pins from ESD-induced overvoltage transients on USB, I²C, or GPIO lines. IC Role / Device Role / Timing Role: Fast clamping diode shunting excess voltage to VCC or GND before IC damage occurs. Use Value: 4.0 ns tRR ensures transient energy is diverted before logic threshold violation; 75 V VRRM accommodates common-mode surges up to ±30 V. | Use Scenario: Translating 5 V TTL signals to 3.3 V logic domains without active level shifters. IC Role / Device Role / Timing Role: Passive voltage dropper using forward conduction drop across series-connected diode. Use Value: Stable 0.72 V VF at 10 mA provides predictable 1.7 V offset; low CT avoids signal edge degradation above 50 MHz. |
| High-Frequency Oscillator Tuning | Power Supply OR-ing Diode |
Use Scenario: Variable capacitance tuning element in Colpitts or Clapp VCOs operating at 50–200 MHz. IC Role / Device Role / Timing Role: Voltage-variable junction capacitor (varactor mode) biased near 0 V. Use Value: 4.0 pF CT at 0 V with <100 mV tuning sensitivity supports fine frequency resolution; low leakage preserves Q-factor. | Use Scenario: Preventing backfeed between redundant 5 V DC power rails in telecom line cards or industrial PLCs. IC Role / Device Role / Timing Role: Unidirectional current path enforcing rail priority and fault isolation. Use Value: 500 mA IFM and 315 °C/W RθJA allow sustained conduction with <15 °C junction rise at full load; SOD-123 footprint fits dense board layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W-7-F | Same SOD-123 package; identical tRR (4 ns), but lower VRRM (100 V vs. 75 V); slightly higher VF (0.75 V @ 10 mA). | Better suited for higher-voltage clamp circuits; marginally less efficient in low-drop level translation. | Select when reverse voltage margin >75 V is required and 0.03 V higher VF is acceptable. |
| BAS16W-7-F | Same package; faster tRR (3 ns), lower CT (2 pF), but reduced IFM (215 mA) and narrower TJ range (–65 to +150 °C). | Preferred for ultra-high-speed sampling gates or RF detectors where capacitance dominates. | Choose for >200 MHz signal paths where 2 pF CT outweighs 285 mA IFM reduction. |
Compared with 1N4448W-7-F, 1N4148W-7-F trades minor forward loss for higher reverse voltage headroom, while BAS16W-7-F sacrifices current capacity for superior RF response - making each optimal for distinct trade-off priorities in signal integrity vs. power handling.
Availability
1N4448W-7-F is available at Aetrix Electronics and suitable for signal clamping, level translation, high-frequency tuning, and power OR-ing applications requiring stable component supply, JEDEC-qualified reliability, and SOD-123 footprint consistency.
Supply support for 1N4448W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The 1N4448W belongs to Diodes' general-purpose fast-switching diode product line, engineered for high-volume, cost-sensitive applications demanding consistent switching speed, thermal stability, and RoHS-compliant packaging.
FAQ
Is the 1N4448W-7-F automotive-qualified?
No - the 1N4448W-7-F is qualified to AEC-Q101 for discrete semiconductors but is not specifically certified for automotive applications. For AEC-Q101-compliant automotive use, Diodes offers the 1N4448WQ-7-F variant, which includes PPAP documentation and IATF 16949 manufacturing controls.
What is the maximum allowable junction temperature during continuous operation?
The absolute maximum junction temperature is +150 °C. Derating begins at +25 °C ambient, with power dissipation linearly reduced to zero at +150 °C, following the 315 °C/W thermal resistance curve shown in Figure 1 of the datasheet.
Can the 1N4448W-7-F be used as a varactor diode?
Yes - its voltage-dependent junction capacitance (4.0 pF at 0 V, decreasing with reverse bias) is specified and stable enough for tuning applications such as VCOs and RF filters, provided bias remains within the 75 V reverse rating and leakage stays below 2.5 μA.
How does moisture sensitivity affect handling and assembly?
The 1N4448W-7-F is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30 °C/85% RH and requires no baking prior to reflow soldering - simplifying SMT line integration and eliminating floor-life constraints.
1N4448W-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOD-123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 2.5 µA @ 75 V
- Capacitance @ Vr, F:
- 4pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N4448W-7-F FAQ
1.How can I place an order for 1N4448W-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4448W-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4448W-7-F reliable?
The price and inventory of 1N4448W-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4448W-7-F is usually 5 days.
3.What payment methods are accepted for 1N4448W-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4448W-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4448W-7-F?
1N4448W-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4448W-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4448W-7-F?
For technical support, including 1N4448W-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4448W-7-F requirements.
6.How does Aetrix verify that 1N4448W-7-F is sourced from the original manufacturer or authorized distributors?
All 1N4448W-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4448W-7-F meets industry standards.
7.What is the process for return or replacement of 1N4448W-7-F?
All 1N4448W-7-F units undergo pre-shipment inspection (PSI). If there is an issue with 1N4448W-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4448W-7-F part is unused and in its original packaging.
Return procedure for 1N4448W-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4448W-7-F Tags
-
1N4448X-TP
Micro Commercial Co
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1N4148WX-TP
Micro Commercial Co
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1N4148TR
onsemi
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MMSD4148T1G
onsemi
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MMBD914LT3G
onsemi
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BAS16HT1G
onsemi
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1N914BWT
onsemi
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BAS21LT1G
onsemi
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LL4148
onsemi
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BAS16LT1G
onsemi
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MMSD914T1G
onsemi
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BAV21W-7-F
Diodes Incorporated
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