Diodes Incorporated 1N4448WQ-7-F

Overview

1N4448WQ-7-F from Diodes Incorporated is a fast-switching surface-mount silicon switching diode in SOD-123 package, rated for 75 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers low forward voltage (0.72 V at 10 mA) and low junction capacitance (4.0 pF), making it suitable for high-speed signal routing and clamp protection in automotive body control modules.

For engineers reviewing the 1N4448WQ-7-F datasheet, 1N4448WQ-7-F pinout, 1N4448WQ-7-F application, or 1N4448WQ-7-F equivalent, key selection criteria include reverse recovery speed, thermal resistance (315 °C/W), JEDEC-qualified reliability, AEC-Q101 readiness, and SOD-123 footprint compatibility with automated assembly.

Technical Context

This diode operates as a unidirectional, low-capacitance, fast-recovery rectifier with a defined cathode band polarity. Its 4.0 ns t_RR enables use in >10 MHz switching waveforms, while its 315 °C/W R_θJA (FR-4, 1"×1" pad) supports operation up to +150 °C junction temperature.

Electrical behavior is characterized by a sharp reverse breakdown at ≥75 V (V_(BR)R, I_R = 10 µA), sub-1.0 V forward conduction up to 150 mA, and leakage <2.5 µA at 75 V/25 °C - confirming suitability for precision clamping and logic-level signal steering.

Key Specifications

Pinout & Package

Package: SOD-123 - surface-mount plastic case (UL 94V-0), 0.01 g mass, matte tin-plated alloy 42 leadframe, cathode band marking, moisture sensitivity level 1.

Key Features

Applications

Availability

1N4448WQ-7-F is available at Aetrix Electronics and suitable for automotive body control units, industrial PLC input stages, USB 2.0 interface protection, and logic-level translation circuits requiring stable component supply and AEC-Q101-aligned reliability.

Supply support for 1N4448WQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 1N4448W series belongs to Diodes' general-purpose fast-switching diode product line, engineered for high-volume, cost-sensitive applications demanding consistent switching performance, JEDEC reliability, and SMT manufacturability.

FAQ

What is the difference between 1N4448WQ-7-F and 1N4448W-7-F?

The 1N4448WQ-7-F and 1N4448W-7-F share identical electrical specifications, SOD-123 packaging, and JEDEC qualification. The "Q" suffix denotes Diodes' automotive-grade traceability and enhanced lot-control documentation, including extended retention of process records and PPAP-ready data packages - not a parametric change.

Is this diode suitable for 24 V industrial power rail protection?

No - the 75 V V_RWM rating provides only ~3× margin over 24 V nominal rails, insufficient for sustained operation under 40 V transients per IEC 61000-4-5. For 24 V systems, a 200 V-rated diode such as the BAV99W is recommended to ensure long-term reliability under surge conditions.

Can 1N4448WQ-7-F replace BAT54 in low-voltage detector circuits?

Not directly - the BAT54 is a Schottky diode with ~0.3 V V_F, while the 1N4448WQ-7-F is a PN junction diode with 0.62–1.25 V V_F. In sub-0.5 V threshold detection, the higher forward drop causes significant offset error and reduced sensitivity; Schottky alternatives like PMEG2005AEH are functionally appropriate.

Does this part meet AEC-Q101 stress testing requirements?

Yes - Diodes Incorporated confirms the 1N4448W series is qualified to AEC-Q101 Rev D for stress tests including HTGB, HTRB, TCT, and mechanical shock. Full qualification reports and test summaries are available upon request for qualified automotive customers.