Taiwan Semiconductor Corporation 1N4448W RHG

Overview

1N4448W RHG from Taiwan Semiconductor is a high-speed silicon switching diode in SOD-123F package, rated for 150 mA forward current, 75 V repetitive peak reverse voltage, and 4 ns reverse recovery time. It serves as a fast-switching rectifier in DC/DC converters and SMPS secondary-side snubbing circuits.

For engineers reviewing the 1N4448W RHG datasheet, 1N4448W RHG pinout, 1N4448W RHG application, or 1N4448W RHG equivalent, key selection criteria include VF at 100 mA (1.00 V), IR at 75 V (5 µA), trr (4 ns), TJ max (150°C), and SOD-123F thermal resistance (450°C/W).

Technical Context

This discrete switching diode employs a planar epitaxial construction with single-die configuration, optimized for low forward voltage drop and minimal charge storage. Its 4 ns reverse recovery time and 2 A non-repetitive surge rating support high-frequency switching up to several MHz in flyback and buck converter topologies.

The SOD-123F package provides JEDEC-compliant mechanical robustness, matte tin-plated leads compliant with J-STD-002, and UL 94 V-0 molding compound - enabling reliable automated placement and reflow soldering in space-constrained power stages.

Key Specifications

Pinout & Package

SOD-123F surface-mount package with cathode band marking; 2-terminal configuration (anode/cathode); 3.3–3.9 mm length, 1.5–1.7 mm width, 0.5–0.7 mm thickness; matte tin-plated leads, JESD201 Class 1A whisker resistant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Compared with 1N4448W RHG, 1N4148W RHG offers higher reverse voltage margin but poorer high-current VF performance, while BAS16W RHG delivers lower conduction loss at identical trr and package - making it preferable for thermally constrained 100–150 mA applications.

Availability

1N4448W RHG is available at Aetrix Electronics and suitable for switching mode power supplies, USB-C adapters, and on-board DC/DC converters requiring stable component supply, RoHS-compliant packaging, and J-STD-020 Level 1 moisture handling.

Supply support for 1N4448W RHG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The 1N4448W RHG belongs to TSC's general-purpose high-speed switching diode product line, engineered specifically for cost-sensitive, high-volume power conversion applications demanding consistent trr, low VF, and robust reflow reliability.

FAQ

What is the maximum repetitive peak reverse voltage rating for the 1N4448W RHG?

The 1N4448W RHG has a maximum repetitive peak reverse voltage (VRRM) rating of 75 V. This value is specified under standard test conditions (TA = 25°C) and defines the highest reverse voltage the diode can block repeatedly without breakdown. Exceeding this rating risks avalanche failure, especially at elevated junction temperatures. The 1N4448W RHG also supports a non-repetitive peak reverse voltage of 100 V for transient events.

How does the forward voltage of the 1N4448W RHG compare to the 1N4148W RHG at 100 mA?

The 1N4448W RHG specifies VF = 1.00 V at IF = 100 mA and TJ = 25°C, whereas the 1N4148W RHG datasheet only guarantees VF ≤ 1.00 V at IF = 10 mA. At 100 mA, the 1N4148W RHG typically exhibits VF ≈ 1.25 V - meaning the 1N4448W RHG delivers ~0.25 V lower conduction loss under identical high-current conditions, directly reducing power dissipation in the 1N4448W RHG.

Is the 1N4448W RHG suitable for use in automotive-grade power supplies?

The 1N4448W RHG is not AEC-Q101 qualified and lacks automotive-specific qualification testing such as temperature cycling, humidity bias HAST, or board-level vibration. While its TJ range (−65°C to +150°C) meets under-hood thermal requirements, Taiwan Semiconductor positions the 1N4448W RHG for industrial and commercial applications. For automotive use, designers should select AEC-Q101-certified alternatives like the BAS16W-AU or NSR0230P2T5G instead of the 1N4448W RHG.

What is the reverse recovery time (trr) specification for the 1N4448W RHG, and how is it measured?

The 1N4448W RHG has a reverse recovery time (trr) of 4 ns, measured under conditions of IF = 10 mA, IR = 60 mA, RL = 100 Ω, and IRR = 1 mA. This parameter reflects the time required for minority carriers to clear the junction after forward conduction ceases. The 4 ns trr enables stable operation in switching converters up to ~5 MHz, and is validated using standardized pulse-test waveforms per JEDEC standards - a key differentiator from slower general-purpose diodes.

Does the 1N4448W RHG have halogen-free and RoHS-compliant construction?

Yes, the 1N4448W RHG is halogen-free per IEC 61249-2-21 and fully compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC. Its molding compound, lead finish (matte tin), and internal die materials contain no brominated flame retardants, chlorine, or other restricted halogens. This makes the 1N4448W RHG suitable for export to EU, China, and other regulated markets requiring full substance compliance documentation.