Diodes Incorporated 1N4448WS-7

Overview

1N4448WS-7 from Diodes Incorporated is a surface-mount fast-switching silicon signal diode in SOD323 package, rated for 75 V peak repetitive reverse voltage, 500 mA forward current, and 4.0 ns reverse recovery time. It delivers high conductance with 0.62–0.72 V forward voltage at 5–10 mA, and is optimized for general-purpose switching in compact, high-density PCB layouts.

For engineers reviewing the 1N4448WS-7 datasheet, 1N4448WS-7 pinout, 1N4448WS-7 application, or 1N4448WS-7 equivalent, this diode serves as a high-speed, low-capacitance (4.0 pF) replacement for legacy through-hole 1N4448 in space-constrained consumer, industrial, and communication circuits requiring reliable turn-on/turn-off behavior under moderate voltage and current stress.

Technical Context

This diode operates as a unidirectional, low-leakage PN junction switch with cathode-band polarity marking. Its 4.0 ns reverse recovery time enables use in frequencies up to ~100 MHz in clamping, waveform shaping, and logic-level translation circuits.

Thermal performance is defined by 625 °C/W junction-to-ambient resistance on FR-4 board with minimum pad layout, supporting continuous operation from –55 °C to +150 °C. Total capacitance remains stable at ≤4.0 pF at 0 V bias and 1 MHz, minimizing signal distortion in RF-coupled paths.

Key Specifications

Pinout & Package

Package: SOD323 - ultra-compact 2-pin surface-mount plastic case (1.30 × 1.70 mm body, 0.30 mm lead width), moisture sensitivity level 1, RoHS-compliant, halogen- and antimony-free "Green" compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching diode applications.

Compared with 1N4148WS-7-F and BAT54C-7-F, the 1N4448WS-7 offers superior voltage handling (75 V vs. 75 V and 30 V) and tighter forward voltage consistency at low currents-making it optimal for mid-voltage signal conditioning where reliability and repeatability are prioritized over ultra-low V_F.

Availability

1N4448WS-7 is available at Aetrix Electronics and suitable for signal clamping, digital logic protection, waveform shaping, and level translation requiring stable component supply across consumer electronics, industrial controls, and communications infrastructure programs.

Supply support for 1N4448WS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 1N4448WS belongs to Diodes' general-purpose fast-switching diode product line, engineered for high-volume, space-constrained applications demanding consistent switching speed, low leakage, and robust thermal performance in commercial and extended-temperature environments.

FAQ

Is the 1N4448WS-7 suitable for automotive applications?

No-the standard 1N4448WS-7 is not AEC-Q101 qualified. For automotive use, Diodes offers the 1N4448WSQ-7-F variant, which undergoes additional qualification testing, supports PPAP documentation, and is manufactured in IATF 16949-certified facilities. The -Q suffix denotes automotive-grade compliance.

What is the maximum operating temperature for continuous use?

The 1N4448WS-7 is rated for continuous operation from –55 °C to +150 °C. Derating begins above +25 °C ambient: power dissipation drops linearly from 200 mW at 25 °C to 0 mW at 150 °C, per the forward current derating curve in Figure 1 of the datasheet.

Can this diode replace a 1N4448 in through-hole designs?

Yes-electrically, the 1N4448WS-7 matches the legacy 1N4448's key parameters (V_RWM, I_F, t_RR, V_F). However, it uses SOD323 surface-mount packaging instead of DO-35, so PCB layout must be updated to accommodate the smaller footprint and reflow soldering process.

How does the 4.0 pF capacitance affect high-frequency performance?

At 1 MHz, the 4.0 pF junction capacitance introduces negligible reactance (>40 kΩ), preserving signal integrity in RF sampling, clock distribution, and fast data lines up to ~100 MHz. Above that, parasitic effects may require layout optimization or alternative diodes with sub-1 pF C_T.