My Inquiry
My Account
Microchip Technology 1N4500E3
- Part No.:
- 1N4500E3
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4500E3.pdf
- Description:
- DIODE GEN PURP 80V 300MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:7,105
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N4500E3 from Microsemi is a hermetically sealed, metallurgically bonded switching diode in DO-35 glass package, rated for 75 V reverse voltage, 0.5 A surge current (1 s sine), and 4 A surge current (1 µs sine), with forward voltage of 0.56 V at 0.25 mA and leakage current ≤100 nA at 75 V - used in MIL-spec high-reliability signal routing and transient protection circuits.
For engineers reviewing the 1N4500E3 datasheet, 1N4500E3 pinout, 1N4500E3 application, or 1N4500E3 equivalent, key selection criteria include its MIL-PRF-19500/403 qualification, -65°C to +175°C operating range, 4.0 pF capacitance at 0 V, 6.0 ns reverse recovery time, and DO-35 mechanical compatibility with legacy through-hole timing and protection designs.
Technical Context
This diode employs double-plug construction and copper-clad steel leads with tin/lead finish, enabling stable performance under thermal cycling and mechanical stress per military environmental requirements. Its hermetic glass seal ensures long-term reliability in aerospace and defense systems where moisture ingress must be eliminated.
The 1N4500E3 exhibits low junction capacitance (≤4.0 pF) and fast reverse recovery (≤6.0 ns), making it suitable for high-frequency switching up to ~100 MHz in pulse shaping, sample-and-hold, and RF detector applications - not intended for power rectification due to low average current rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 75 V - maximum DC blocking capability at +25°C; derating required above 25°C ambient |
| Forward Voltage (VF) | 0.56 V max at IF = 0.25 mA - enables low-loss signal switching in bias networks |
| Leakage Current (IR) | ≤100 nA at 75 V - supports high-impedance sensing and precision reference paths |
| Reverse Recovery Time (trr) | ≤6.0 ns - allows use in >10 MHz digital waveform conditioning and pulse clipping |
| Junction Capacitance (Cj) | ≤4.0 pF at 0 V - minimizes loading on RF and high-speed logic nodes |
| Surge Current (IFSM) | 4 A peak for 1 µs - provides transient overvoltage clamping without failure |
| Operating Temperature | -65°C to +175°C - qualified for engine bay, avionics, and downhole electronics |
Pinout & Package
DO-35 hermetically sealed glass package with axial leads; cathode identified by band on glass body; lead material is copper-clad steel with tin/lead finish; thermal resistance 70°C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal for forward conduction | Connected to lower-potential node in clamp or switch configuration |
| Cathode | Negative terminal; banded end | Connected to higher-potential node or ground return path in protection circuits |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/403 Qualified | Meets screening, testing, and traceability requirements for JAN/JANTX levels in defense procurement |
| Hermetic Glass Seal | Prevents humidity-induced parameter drift and corrosion in harsh environments |
| Double Plug Construction | Enhances mechanical bond integrity between die and leads under thermal shock |
| Low Capacitance & Fast trr | Enables clean edge preservation in <100 MHz pulse and RF detector circuits |
| Wide Temperature Range | Supports operation in unheated aircraft bays and oilfield electronics without derating |
Applications
| RF Detector Circuit | Precision Bias Network |
|---|---|
Use Scenario: Demodulating AM signals in L-band receiver front-ends. IC Role / Device Role / Timing Role: Signal-level rectifier converting RF envelope to baseband voltage. Use Value: 4.0 pF capacitance avoids detuning resonant circuits; 6.0 ns trr preserves modulation fidelity. | Use Scenario: Providing temperature-stable bias current to op-amp input stages in flight control sensors. IC Role / Device Role / Timing Role: Low-leakage current source element in precision current mirror. Use Value: ≤100 nA leakage ensures sub-µA error currents across -65°C to +175°C range. |
| Transient Voltage Clamp | High-Speed Logic Interface Protection |
Use Scenario: Suppressing ESD and inductive kickback on MIL-STD-1553 data lines. IC Role / Device Role / Timing Role: Bidirectional shunt protector limiting line-to-ground excursions. Use Value: 4 A 1 µs surge rating absorbs MIL-STD-461 CS115 pulses without degradation. | Use Scenario: Isolating TTL outputs from noisy backplane traces in ruggedized computing modules. IC Role / Device Role / Timing Role: High-speed steering diode preventing latch-up during hot-swap events. Use Value: 6.0 ns trr prevents false triggering in >20 MHz clock domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4501E3 | 75 V VR, but 0.60 V VF max at 0.25 mA - higher forward drop | Suitable where leakage tolerance is relaxed but surge immunity remains critical | Select when lower cost is prioritized over minimal forward loss |
| 1N5711 | 70 V VR, 0.45 V VF max at 1 mA, 1.0 pF Cj - lower capacitance but non-MIL-qualified | Preferred for commercial RF detectors where hermeticity not mandated | Choose only for non-military designs requiring ultra-low Cj |
Compared with 1N4500E3, the 1N4501E3 trades slightly higher forward voltage for identical MIL qualification and surge rating, while the 1N5711 offers superior RF performance at the expense of environmental ruggedness and traceability - neither is pin-compatible, but all share DO-35 footprint.
Availability
1N4500E3 is available at Aetrix Electronics and suitable for aerospace avionics, downhole instrumentation, and military communications systems requiring stable component supply across extended temperature and long lifecycle programs.
Supply support for 1N4500E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The 1N4500E3 belongs to Microsemi's legacy MIL-PRF-19500/403 qualified switching diode family, designed specifically for signal integrity and transient resilience in mission-critical electronic subsystems.
FAQ
What is the maximum reverse voltage rating for the 1N4500E3?
The 1N4500E3 has a maximum DC reverse voltage rating of 75 V at +25°C ambient temperature. This rating decreases linearly with increasing junction temperature, and full derating curves are provided in the LDS-0154 Rev. 1 datasheet. The 1N4500E3 must not be operated beyond this limit to avoid avalanche breakdown or parametric shift.
Is the 1N4500E3 suitable for high-frequency RF applications?
Yes, the 1N4500E3 is suitable for RF applications up to approximately 100 MHz due to its ≤4.0 pF junction capacitance at 0 V and ≤6.0 ns reverse recovery time. It is commonly used in RF detector, mixer, and limiter circuits where hermetic reliability and fast switching are required - confirmed in Microsemi's LDS-0154 application notes.
Does the 1N4500E3 meet MIL-PRF-19500/403 requirements?
Yes, the 1N4500E3 is explicitly qualified to MIL-PRF-19500/403 at JAN and JANTX levels, including environmental screening, lot traceability, and burn-in testing. This qualification is documented in the official LDS-0154 Rev. 1 datasheet and verified through Microsemi's certified test reports for the 1N4500E3 device.
What is the thermal resistance of the 1N4500E3 package?
The 1N4500E3 has a maximum thermal resistance of 70°C/W from junction to ambient, measured in free-air conditions. This value assumes standard DO-35 mounting with no heatsinking; actual thermal performance improves with PCB copper area or thermal vias, as outlined in Microsemi's package design guidelines for the 1N4500E3.
How is polarity identified on the 1N4500E3?
The cathode of the 1N4500E3 is marked by a visible band on the glass body of the DO-35 package. This band must be oriented toward the more positive potential in forward-biased configurations. Polarity verification is critical for correct installation in clamp, detector, and bias circuits using the 1N4500E3.
1N4500E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 300 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 6 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 75 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4500E3 FAQ
1.How can I place an order for 1N4500E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4500E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4500E3 reliable?
The price and inventory of 1N4500E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4500E3 is usually 5 days.
3.What payment methods are accepted for 1N4500E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4500E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4500E3?
1N4500E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4500E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4500E3?
For technical support, including 1N4500E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4500E3 requirements.
6.How does Aetrix verify that 1N4500E3 is sourced from the original manufacturer or authorized distributors?
All 1N4500E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4500E3 meets industry standards.
7.What is the process for return or replacement of 1N4500E3?
All 1N4500E3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N4500E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4500E3 part is unused and in its original packaging.
Return procedure for 1N4500E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4500E3 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
