My Inquiry
My Account
Microchip Technology 1N4500E3/TR
- Part No.:
- 1N4500E3/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N4500E3/TR.pdf
- Description:
- DIODE GP REV 80V 300MA DO35
- Quantity:
- Payment:
- Shipping:
Inventory:2,147
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N4500E3/TR from Microsemi is a hermetically sealed, metallurgically bonded switching diode in DO-35 glass package, rated for 75 V reverse voltage, 0.5 A surge current (1 s sine), and operating up to +175°C ambient. It delivers fast 6.0 ns turn-off time with low 0.56 V forward voltage at 250 mA, suited for high-reliability military timing and pulse conditioning circuits.
For engineers reviewing the 1N4500E3/TR datasheet, 1N4500E3/TR pinout, 1N4500E3/TR application, or 1N4500E3/TR equivalent, key selection criteria include MIL-PRF-19500/403 qualification, hermetic DO-35 packaging, 100 nA max leakage at 75 V, thermal resistance of 70°C/W, and double-plug construction for mechanical robustness.
Technical Context
This diode employs metallurgical bonding and double-plug construction to ensure stable junction integrity under thermal cycling and mechanical stress. Its hermetic glass seal meets MIL-PRF-19500/403 Class JANTX requirements, supporting operation from –65°C to +175°C with 4 A surge capability at 1 μs.
Electrical behavior is defined by tight VF tolerances (0.47–0.56 V at 250 mA), controlled VBR (min 80 V at 100 μA IR), and low 4.0 pF capacitance at 0 V - enabling predictable switching in RF and pulse-shaping applications where parasitic effects must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 75 V DC - maximum continuous blocking voltage at +25°C; derated above 25°C |
| Forward Voltage (VF) | 0.56 V max at IF = 250 mA - ensures low conduction loss in high-speed switching paths |
| Reverse Leakage (IR) | 100 nA max at VR = 75 V - critical for low-power hold-off and precision timing circuits |
| Turn-off Time (trr) | 6.0 ns max - enables reliable operation in >100 MHz pulse conditioning and waveform shaping |
| Surge Current (IFSM) | 0.5 A (1 s sine) / 4 A (1 μs sine) - supports transient overvoltage handling in ruggedized systems |
| Thermal Resistance (RθJA) | 70°C/W - defines junction-to-ambient rise under free-air conditions; impacts power dissipation limits |
| Operating Temperature | –65°C to +175°C - qualified for extended-range aerospace, downhole, and defense electronics |
Pinout & Package
Package: DO-35 hermetically sealed glass case per MIL-PRF-19500/403; cathode indicated by band on glass body; leads are copper-clad steel with tin/lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal for forward conduction | Connected to P-type region; accepts current flow when biased positive relative to cathode |
| Cathode | Negative terminal; marked with band | Connected to N-type region; defines polarity-sensitive mounting and circuit orientation |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/403 Qualified | JANTX level - guarantees screening, traceability, and reliability for defense/aerospace programs |
| Hermetic Glass Encapsulation | Prevents moisture ingress and long-term parameter drift in harsh environments |
| Double Plug Construction | Enhances mechanical bond strength between lead and semiconductor die, reducing failure under vibration |
| Metallurgical Bonding | Provides superior thermal and electrical interface vs. epoxy-bonded alternatives, improving pulse survivability |
| Low Junction Capacitance | 4.0 pF max at 0 V - minimizes signal distortion in high-frequency sampling and RF detector stages |
Applications
| Radar Pulse Conditioning | Aerospace Timing Circuits |
|---|---|
Use Scenario: Fast edge generation and amplitude limiting in X-band radar modulator stages. IC Role / Device Role / Timing Role: Switching diode used as clamp and pulse shaper in high-voltage, nanosecond-rise-time signal paths. Use Value: 6.0 ns trr and 75 V VR enable precise pulse width control without overshoot or ringing. | Use Scenario: Clock signal steering and isolation in radiation-tolerant avionics timing modules. IC Role / Device Role / Timing Role: Signal routing switch in redundant oscillator selection logic. Use Value: –65°C to +175°C operation and MIL-qualified screening ensure uptime across flight envelope extremes. |
| Downhole Instrumentation | Military Power Sequencing |
Use Scenario: Voltage clamping and transient suppression in oil/gas logging tools exposed to >150°C wellbore temperatures. IC Role / Device Role / Timing Role: Protection diode across sensor bias rails and ADC input stages. Use Value: 100 nA leakage at 75 V prevents measurement offset drift in ultra-low-current analog front-ends. | Use Scenario: Controlled turn-on sequencing of multiple DC-DC converters in secure comms platforms. IC Role / Device Role / Timing Role: Discrete switch in RC-delayed enable networks for staged power-up. Use Value: Metallurgical bonding and hermetic seal prevent parametric shift during thermal shock and humidity exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4501E3/TR | Higher VR = 100 V; same DO-35 package and MIL-PRF-19500/403 JANTX qualification | Used where higher reverse standoff is required, e.g., 48 V telecom surge protection | Select 1N4501E3/TR only if system requires >75 V blocking; otherwise 1N4500E3/TR offers tighter VF spec |
| 1N4148WS-7-F | Surface-mount SOD-323 package; commercial-grade (not MIL-qualified); VR = 100 V, trr = 4 ns | Targeted at cost-sensitive, high-volume consumer and industrial PCBs with reflow assembly | Choose 1N4148WS-7-F for non-military designs needing smaller footprint and faster trr, but not for hermetic or screened applications |
Compared with 1N4501E3/TR and 1N4148WS-7-F, the 1N4500E3/TR uniquely balances MIL-qualified reliability, hermetic DO-35 packaging, and optimized VF/trr trade-off for mission-critical pulse and timing functions where environmental resilience is non-negotiable.
Availability
1N4500E3/TR is available at Aetrix Electronics and suitable for radar pulse conditioning, aerospace timing circuits, and downhole instrumentation requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N4500E3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N4500E3/TR belongs to Microsemi's legacy MIL-PRF-19500/403 qualified switching diode family, engineered for extreme-environment signal integrity in timing, pulse, and protection roles.
FAQ
What is the maximum reverse voltage rating for the 1N4500E3/TR?
The 1N4500E3/TR has a maximum DC reverse voltage (VR) rating of 75 V at +25°C ambient. This rating is derated linearly above 25°C per the datasheet's thermal specification. The 1N4500E3/TR maintains this blocking capability while operating across its full –65°C to +175°C junction temperature range, making it suitable for high-temperature downhole and avionics applications where voltage margin must remain stable.
Is the 1N4500E3/TR qualified to MIL-PRF-19500/403?
Yes, the 1N4500E3/TR is qualified to MIL-PRF-19500/403 at the JANTX level, including full screening, lot traceability, and environmental testing per military standards. This qualification is documented in Microsemi's LDS-0154 Rev. 1 datasheet and confirms the 1N4500E3/TR's suitability for use in defense, space, and other high-assurance programs requiring certified component pedigree.
What does the "E3/TR" suffix indicate for the 1N4500E3/TR?
The "E3" denotes Microsemi's standard hermetic DO-35 package with tin/lead lead finish and banded cathode marking. "TR" indicates tape-and-reel packaging - specifically, 2,000 units per reel - facilitating automated placement in high-reliability manufacturing. The 1N4500E3/TR combines this packaging format with full MIL-PRF-19500/403 JANTX screening, distinguishing it from commercial variants.
What is the typical forward voltage drop of the 1N4500E3/TR at 250 mA?
The 1N4500E3/TR exhibits a forward voltage (VF) of 0.47 V minimum and 0.56 V maximum at IF = 250 mA and +25°C ambient. This tightly bounded VF ensures consistent conduction loss in precision switching paths. The 1N4500E3/TR's metallurgical bonding contributes to this stability, minimizing variation across temperature and lifetime compared to epoxy-bonded alternatives.
Does the 1N4500E3/TR have a specified junction capacitance value?
Yes, the 1N4500E3/TR has a maximum junction capacitance (Cj) of 4.0 pF measured at 0 V reverse bias and +25°C. This low capacitance supports minimal signal loading in high-frequency applications such as RF detection and fast pulse shaping. The 1N4500E3/TR's hermetic DO-35 construction helps maintain this capacitance stability across temperature and humidity, unlike plastic-packaged diodes.
1N4500E3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 300 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 6 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 75 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AH (DO-35)
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N4500E3/TR FAQ
1.How can I place an order for 1N4500E3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4500E3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4500E3/TR reliable?
The price and inventory of 1N4500E3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4500E3/TR is usually 5 days.
3.What payment methods are accepted for 1N4500E3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4500E3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4500E3/TR?
1N4500E3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4500E3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4500E3/TR?
For technical support, including 1N4500E3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4500E3/TR requirements.
6.How does Aetrix verify that 1N4500E3/TR is sourced from the original manufacturer or authorized distributors?
All 1N4500E3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4500E3/TR meets industry standards.
7.What is the process for return or replacement of 1N4500E3/TR?
All 1N4500E3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4500E3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4500E3/TR part is unused and in its original packaging.
Return procedure for 1N4500E3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N4500E3/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
