Nexperia USA Inc. 1N4531,113

Overview

1N4531,113 from Nexperia is a hermetically sealed high-speed switching diode in SOD68 (DO-34) glass package, rated for 75 V repetitive peak reverse voltage, 450 mA repetitive peak forward current, and 4 ns reverse recovery time. It serves as a protection diode in reed relay circuits and high-frequency signal path clamping where low capacitance (4 pF) and fast turn-off are critical.

For engineers reviewing the 1N4531,113 datasheet, 1N4531,113 pinout, 1N4531,113 application, or 1N4531,113 equivalent, key selection criteria include verified trr ≤ 4 ns at IF = 10 mA → IR = 60 mA, VR = 20 V reverse leakage ≤ 25 nA at 25 °C, and thermal resistance Rth j-a = 350 K/W with 5 mm lead length.

Technical Context

This planar-processed silicon diode operates as a unidirectional charge carrier switch optimized for minimal minority-carrier storage. Its 4 ns trr is achieved via controlled doping and short carrier lifetime, enabling reliable operation up to ~100 MHz in clipping and clamping topologies.

The SOD68 package provides hermetic glass-to-metal sealing, ensuring stable electrical parameters across −65 °C to +200 °C storage range and supporting reed relay protection where moisture-induced leakage must be avoided.

Key Specifications

Pinout & Package

Two-terminal axial-leaded device in hermetically sealed SOD68 (DO-34) glass package: 3.04 mm max body diameter, 25.4 mm min lead length, 1.6 mm max body length. Cathode identified by band marking.

Key Features

Applications

Availability

1N4531,113 is available at Aetrix Electronics and suitable for reed relay protection, RF signal clipping, and low-power logic-level translation requiring stable component supply and long-term obsolescence management.

Supply support for 1N4531,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, formed in 2017 from the former NXP Standard Products division, specializing in automotive, industrial, and computing applications.

The 1N4531,113 belongs to Nexperia's legacy high-speed diode product line, engineered specifically for reliability-critical protection and signal conditioning in electromechanical and RF systems.

FAQ

What is the cathode identification method for 1N4531,113?

The cathode is marked by a single opaque band on the glass body, located at the banded end of the axial leaded package. This band aligns with industry-standard DO-34 polarity marking and must be oriented toward the higher-potential node in flyback protection configurations.

Can 1N4531,113 replace 1N4148 in high-speed applications?

Yes, but only where 75 V V_RRM and 4 ns t_rr meet requirements. The 1N4531,113 offers lower capacitance (4 pF vs. typical 4–5 pF) and tighter trr distribution than standard 1N4148 variants, though its 1000 mV V_F is higher than 1N4148's ~700 mV at 10 mA.

Is 1N4531,113 suitable for surface-mount assembly?

No - it uses an axial-leaded SOD68 (DO-34) glass package designed exclusively for through-hole mounting. Its hermetic seal and lead geometry are incompatible with reflow or wave soldering processes used for SMD components.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 200 °C, but continuous operation above 150 °C requires derating per Fig.2 in the datasheet. At 25 °C ambient, maximum continuous forward current is 200 mA; this drops to ~100 mA at 100 °C ambient due to R_{th j-a} = 350 K/W.