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Microchip Technology 1N4532UR
- Part No.:
- 1N4532UR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- DO-204AG, DO-34, Axial
- Datasheet:
-
1N4532UR.pdf
- Description:
- DIODE SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:6,554
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Product details
Overview
1N4532UR from Microsemi (now Microchip Technology) is a hermetically sealed, metallurgically bonded silicon switching diode in a DO-34 glass package, rated for 50 V DC reverse voltage, 125 mA operating current, and 4.0 ns reverse recovery time (TRR), used in high-reliability timing, pulse shaping, and sample-and-hold circuits in aerospace and defense systems.
For engineers reviewing the 1N4532UR datasheet, 1N4532UR pinout, 1N4532UR application, or 1N4532UR equivalent, key selection criteria include TRR ≤ 4.0 ns, VRWM = 50 V, VF ≤ 1.0 V at 10 mA, hermetic DO-34 packaging, and operation across –55°C to +175°C.
Technical Context
This diode employs double-plug construction and metallurgical bonding to achieve low junction-to-lead thermal resistance (RθJL ≤ 250°C/W) and fast transient response. Its TRR of ≤ 4.0 ns at IF = IR = 10 mA and IRec = 1 mA supports high-speed switching in precision analog sampling paths.
The device meets MIL-PRF-19500/144 Class JANTXV requirements, with specified capacitance ≤ 2.0 pF at 0 V and forward recovery time (TFR) ≤ 30 ns at IF = 100 mA - enabling use in RF detector and high-frequency clamp circuits where low parasitic capacitance and rapid turn-on are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - maximum continuous reverse voltage before significant leakage or breakdown |
| TRR | ≤ 4.0 ns - ensures minimal tail current during turn-off in >10 MHz switching applications |
| VF @ 10 mA | ≤ 1.0 V - low forward drop preserves signal integrity in low-voltage analog sampling networks |
| CJ @ 0 V | ≤ 2.0 pF - enables stable operation in 500+ MHz RF detector and mixer bias networks |
| RθJL | ≤ 250°C/W - supports reliable power dissipation up to 500 mW in compact hermetic layouts |
| Operating Temp | –55°C to +175°C - qualified for engine bay, avionics, and downhole electronics without derating |
Pinout & Package
Hermetically sealed DO-34 glass package per MIL-PRF-19500/144; cathode identified by axial band; leads are copper-clad steel with tin/lead finish; L = 0.375″ lead length defines thermal resistance test condition.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to source or signal input in clamping, sampling, or demodulation paths |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; ties to reference rail or output node; determines polarity in peak-detector configurations |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-34 package | Prevents moisture ingress and long-term parameter drift in harsh environments (MIL-STD-883 compliant) |
| Metallurgical bonding | Eliminates wire bonds, reducing parasitic inductance and improving TRR consistency |
| Double-plug construction | Enhances mechanical stability and thermal path uniformity under thermal cycling stress |
| JANTXV qualification | Meets full screening per MIL-PRF-19500/144 for flight-critical timing and control subsystems |
Applications
| Precision Sample-and-Hold Circuit | RF Peak Detector |
|---|---|
Use Scenario: Capturing fast transient waveforms in radar receiver front-ends with sub-ns aperture uncertainty. IC Role / Device Role / Timing Role: Fast-switching diode in hold capacitor charge/discharge path, controlling sampling gate timing. Use Value: TRR ≤ 4.0 ns minimizes droop and feedthrough error; ≤ 2.0 pF capacitance avoids loading high-Z sample nodes. | Use Scenario: Converting RF envelope signals to baseband DC in missile seeker telemetry receivers. IC Role / Device Role / Timing Role: Low-capacitance, low-VF switching diode in series-detector configuration. Use Value: ≤ 2.0 pF CJ and ≤ 1.0 V VF ensure accurate amplitude tracking above 400 MHz without harmonic distortion. |
| High-Temp Engine Control Sensor Interface | Aerospace Pulse Shaping Network |
Use Scenario: Signal conditioning for thermocouple or RTD interfaces in turbine monitoring systems. IC Role / Device Role / Timing Role: Clamping diode protecting ADC inputs against ESD and overvoltage transients. Use Value: Stable operation from –55°C to +175°C eliminates thermal recalibration; hermetic seal prevents corrosion in oil/vapor environments. | Use Scenario: Edge sharpening and pulse narrowing in guidance system timing discriminators. IC Role / Device Role / Timing Role: Fast recovery diode in nonlinear delay line or pulse-stretching feedback loop. Use Value: ≤ 4.0 ns TRR enables <10 ns pulse fidelity; metallurgical bond ensures repeatable timing jitter <0.5 ps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4531UR | VRWM = 30 V; TRR ≤ 4.0 ns; same DO-34 package and JANTXV screening | Limited to lower-voltage sample-and-hold and clamp circuits (≤30 V rails) | Select when system reverse voltage is ≤30 V and cost sensitivity outweighs 50 V margin |
| 1N5711 | VRWM = 70 V; TRR ≤ 5.0 ns; plastic DO-41 package; commercial-grade only | Not screened to MIL-PRF-19500; unsuitable for flight or extended-temp deployments | Use only in non-mission-critical industrial controls where hermeticity and temperature range are not required |
Compared with 1N4532UR, the 1N4531UR offers identical speed and reliability at reduced voltage rating, while the 1N5711 trades hermeticity and military screening for higher VRWM and lower cost - making 1N4532UR the sole choice for high-temp, high-reliability analog switching where parameter stability and environmental immunity are mandatory.
Availability
1N4532UR is available at Aetrix Electronics and suitable for precision analog sampling, RF detection, high-temperature sensor interfacing, and aerospace pulse conditioning requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N4532UR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial applications.
The 1N4532UR belongs to Microsemi's legacy MIL-PRF-19500/144 switching diode family, engineered specifically for high-speed, high-temperature, hermetically sealed signal routing in mission-critical timing and measurement systems.
FAQ
What is the maximum reverse voltage rating for the 1N4532UR?
The 1N4532UR has a DC reverse voltage (VRWM) rating of 50 V. This value is specified at 25°C ambient and represents the maximum continuous voltage the diode can block in reverse bias without exceeding rated leakage current. Operation above this voltage risks irreversible breakdown, especially outside the –55°C to +175°C qualified temperature range.
Does the 1N4532UR meet military specifications?
Yes, the 1N4532UR is manufactured and tested to MIL-PRF-19500/144 Class JANTXV requirements. It undergoes full screening including temperature cycling, hermeticity testing, and electrical verification across –55°C to +175°C, confirming compliance for use in defense and spaceflight hardware where reliability is non-negotiable.
What is the reverse recovery time (TRR) of the 1N4532UR and how is it measured?
The 1N4532UR has a maximum reverse recovery time (TRR) of 4.0 ns, measured under standardized conditions: IF = IR = 10 mA, IRec = 1 mA, and ambient temperature at 25°C. This parameter reflects the time required for minority carriers to clear the junction after forward conduction, directly impacting switching fidelity in high-frequency sampling circuits.
Can the 1N4532UR be used in RF detector applications?
Yes, the 1N4532UR is well-suited for RF detector applications due to its low junction capacitance (≤2.0 pF at 0 V) and fast switching characteristics. Its hermetic DO-34 package and metallurgical bonding minimize parasitic effects, enabling accurate envelope detection up to 500 MHz in telemetry and seeker receiver front-ends where signal integrity is critical.
What is the thermal resistance specification for the 1N4532UR and how does it affect layout design?
The 1N4532UR has a maximum junction-to-lead thermal resistance (RθJL) of 250°C/W at L = 0.375″. This value assumes standard lead length and soldering conditions; designers must maintain adequate copper pour and avoid excessive trace length on anode/cathode connections to prevent localized heating that could exceed the 500 mW total power dissipation limit.
1N4532UR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- DO-204AG, DO-34, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 125mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-34
- Operating Temperature - Junction:
- -55°C ~ 175°C
1N4532UR FAQ
1.How can I place an order for 1N4532UR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N4532UR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N4532UR reliable?
The price and inventory of 1N4532UR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N4532UR is usually 5 days.
3.What payment methods are accepted for 1N4532UR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N4532UR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N4532UR?
1N4532UR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N4532UR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N4532UR?
For technical support, including 1N4532UR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N4532UR requirements.
6.How does Aetrix verify that 1N4532UR is sourced from the original manufacturer or authorized distributors?
All 1N4532UR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N4532UR meets industry standards.
7.What is the process for return or replacement of 1N4532UR?
All 1N4532UR units undergo pre-shipment inspection (PSI). If there is an issue with 1N4532UR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N4532UR part is unused and in its original packaging.
Return procedure for 1N4532UR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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