Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N457/TR

Part No.:
1N457/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
DO-204AH, DO-35, Axial
Datasheet:
Aetrix1N457/TR.pdf
Description:
DIODE GP REV 70V 150MA DO35
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,722

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N457/TR from Microsemi is a hermetically sealed, metallurgically bonded fast-switching signal diode in DO-35 glass package, rated for 70 V maximum reverse voltage, 150 mA average output current, and 1.0 V forward voltage at 100 mA - used in RS-232 interfaces, Ethernet 10Base-T links, and switching core drivers.

For engineers reviewing the 1N457/TR datasheet, 1N457/TR pinout, 1N457/TR application, or 1N457/TR equivalent, key selection criteria include reverse voltage rating (VRM = 70 V), low junction capacitance, JAN-level reliability qualification, and compatibility with high-density through-hole PCB layouts.

Technical Context

This diode operates as a unidirectional, low-capacitance switching element with metallurgical bonding ensuring stable junction integrity under thermal cycling. Its DO-35 hermetic glass package supports operation from –65 °C to +150 °C junction temperature and enables reliable performance in transient-prone data line protection.

Designed for fast recovery (typical trr < 4 ns per family characterization), it delivers tight VF control (≤1.0 V @ 100 mA) and low IR leakage (≤25 nA @ VRWM = 60 V), making it suitable for high-frequency signal routing where minimal forward drop and reverse conduction are critical.

Key Specifications

ParameterValue and Actual Design Meaning
Max Reverse Voltage (VRM)70 V - defines absolute maximum non-repetitive reverse blocking capability without breakdown.
Working Peak Reverse Voltage (VRWM)60 V - maximum continuous reverse voltage applied during normal operation across full temperature range.
Avg Output Current (IO)150 mA @ 25 °C - usable DC rectified current before thermal derating begins at elevated ambient temperatures.
Forward Voltage (VF)1.0 V max @ 100 mA - ensures low power loss and minimal voltage offset in signal path applications.
Reverse Leakage (IR)25 nA max @ VRWM = 60 V - guarantees negligible standby current in high-impedance receive circuits.
Junction Temp Range–65 °C to +150 °C - supports deployment in aerospace, industrial, and military environments with extreme thermal profiles.

Pinout & Package

DO-35 hermetically sealed glass package with axial leads; cathode identified by blue body band. Total weight: 0.2 g. Dimensions: BD = 0.056–0.075 in (1.42–1.90 mm), BL = 0.140–0.180 in (3.56–4.57 mm).

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential side of circuit; must be biased positive relative to cathode for conduction.
CathodeForward current exit pointBanded end; connects to higher-potential node; determines polarity-sensitive placement on PCB.

Key Features

FeatureDesign Value
Metallurgical bondingEnsures mechanical robustness and long-term junction stability under thermal shock and vibration.
Hermetic glass sealingPrevents moisture ingress and contamination, enabling >20-year operational life in harsh environments.
JAN qualification per MIL-PRF-19500/193Validates reliability for defense/aerospace use with screening including temperature cycling and burn-in.
Low forward voltage toleranceTight VF ≤ 1.0 V at 100 mA improves signal fidelity and reduces self-heating in dense logic interface designs.

Applications

RS-232 Interface ProtectionEthernet 10Base-T Signal Clamping

Use Scenario: Bidirectional EIA-232 data lines exposed to ESD and line transients in industrial terminals.

IC Role / Device Role / Timing Role: Signal-level clamping diode placed between driver/receiver pins and ground or supply rails.

Use Value: Fast response (<4 ns trr) and low VF limit voltage overshoot to safe levels while preserving signal edge integrity.

Use Scenario: Differential pair termination and transient suppression in legacy 10 Mbps Ethernet PHY layers.

IC Role / Device Role / Timing Role: Low-capacitance steering diode in TVS-assisted front-end protection networks.

Use Value: 0.2 pF typical junction capacitance minimizes signal distortion on 100 Ω differential pairs.

Switching Core Driver IsolationHigh-Density Through-Hole Logic Interface

Use Scenario: Isolating gate drive signals from noise-coupled power stages in DC-DC controllers.

IC Role / Device Role / Timing Role: Unidirectional level-shifting and noise-blocking diode in bootstrap or feedback paths.

Use Value: 150 mA IO rating supports peak gate charge currents without thermal runaway.

Use Scenario: Space-constrained backplane interconnects requiring flexible lead forming and manual assembly.

IC Role / Device Role / Timing Role: Signal routing and polarity enforcement component in legacy TTL/CMOS board-to-board links.

Use Value: DO-35 axial package allows vertical mounting and 0.2 g mass eases mechanical stress on solder joints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4148WHigher IF = 300 mA, but VRM = 100 V and VF = 1.25 V @ 10 mA - not JAN-qualified.Commercial-only, RoHS-compliant SOD-123 surface-mount variant; unsuitable for hermetic or through-hole requirements.Select when higher surge current handling is needed and surface-mount assembly is preferred.
1N457AIdentical electrical specs and DO-35 package; differs only in JAN reliability screening and marking (blue band + black digits vs. commercial black band).No functional difference in circuit behavior; selected only when MIL-PRF-19500/193 compliance is mandated.Choose 1N457A if program requires JAN-level traceability and extended environmental testing.

Compared with 1N457/TR, 1N4148W offers higher current capacity but lacks hermetic sealing and military qualification, while 1N457A matches all electrical and mechanical properties but adds certified reliability screening - making 1N457/TR optimal for cost-sensitive, non-JAN industrial designs needing proven DO-35 robustness.

Availability

1N457/TR is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10Base-T signal clamping, and switching core driver isolation requiring stable component supply across extended production lifecycles.

Supply support for 1N457/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and discrete components for aerospace, defense, and industrial markets.

The 1N457/TR belongs to Microsemi's legacy JEDEC-registered switching diode family, engineered for fast, low-loss signal routing in mission-critical communication and power control systems where hermetic integrity and MIL-spec reliability are essential.

FAQ

What is the maximum reverse voltage rating for the 1N457/TR?

The 1N457/TR has a maximum reverse voltage (VRM) rating of 70 V, meaning it can block up to 70 volts in reverse bias without breakdown. This value is specified at 25 °C and must be derated at elevated temperatures. The working peak reverse voltage (VRWM) is 60 V, which is the highest continuous reverse voltage allowed across its operating temperature range.

Is the 1N457/TR hermetically sealed and qualified to military standards?

Yes, the 1N457/TR is hermetically sealed in a DO-35 glass package and qualified to MIL-PRF-19500/193 at JAN level. This certification includes rigorous environmental screening such as temperature cycling, steady-state life testing, and burn-in - confirming suitability for aerospace and defense applications where long-term reliability under stress is mandatory.

What is the forward voltage drop of the 1N457/TR at rated current?

The 1N457/TR exhibits a maximum forward voltage (VF) of 1.0 V at 100 mA DC forward current. This specification is measured under pulsed conditions (tp = 8.5 ms, duty cycle ≤2%) and ensures predictable voltage loss in signal path and clamping applications, supporting accurate logic-level translation and low-power dissipation.

Does the 1N457/TR have RoHS-compliant versions available?

RoHS-compliant versions of the 1N457/TR are available only in commercial-grade variants, marked with "e3" suffix and featuring matte tin plating. JAN-qualified units (e.g., JAN1N457) are not RoHS-compliant due to their tin/lead terminal finish, which meets MIL-STD-750 test requirements for solderability and reliability in high-reliability programs.

How does the 1N457/TR compare to the 1N457A in terms of electrical performance?

The 1N457/TR and 1N457A share identical electrical characteristics - including VRM = 70 V, VRWM = 60 V, VF ≤ 1.0 V @ 100 mA, and IR ≤ 25 nA @ VRWM. Their difference lies solely in reliability screening: 1N457A undergoes full JAN qualification per MIL-PRF-19500/193, while 1N457/TR is a commercial-grade variant with standard quality assurance.

1N457/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-204AH, DO-35, Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
150mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 µA @ 70 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AH (DO-35)
Operating Temperature - Junction:
-65°C ~ 150°C

1N457/TR FAQ

1.How can I place an order for 1N457/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N457/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N457/TR reliable?

The price and inventory of 1N457/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N457/TR is usually 5 days.

3.What payment methods are accepted for 1N457/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N457/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N457/TR?

1N457/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N457/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N457/TR?

For technical support, including 1N457/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N457/TR requirements.

6.How does Aetrix verify that 1N457/TR is sourced from the original manufacturer or authorized distributors?

All 1N457/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N457/TR meets industry standards.

7.What is the process for return or replacement of 1N457/TR?

All 1N457/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N457/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N457/TR part is unused and in its original packaging.

Return procedure for 1N457/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N457/TR Tags

  • 1N457/TR
  • 1N457/TR PDF
  • 1N457/TR Datasheet
  • 1N457/TR Specifications
  • 1N457/TR Images
  • Microchip Technology
  • Microchip Technology 1N457/TR
  • Buy 1N457/TR
  • 1N457/TR Price
  • 1N457/TR Distributor
  • 1N457/TR Supplier
  • 1N457/TR Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER