Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N483BUR/TR

Part No.:
1N483BUR/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
DO-213AA
Datasheet:
Aetrix1N483BUR/TR.pdf
Description:
SIGNAL OR COMPUTER DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,385

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N483BUR/TR from Microsemi is a hermetically sealed glass switching diode with metallurgically bonded double-plug construction, 225 V DC reverse voltage rating, 200 mA maximum operating current at 25°C, and -65°C to +175°C operating temperature range-used in high-reliability power supply clamp and transient suppression circuits.

For engineers reviewing the 1N483BUR/TR datasheet, 1N483BUR/TR pinout, 1N483BUR/TR application, or 1N483BUR/TR equivalent, key selection criteria include its hermetic glass package, 500 mW total power dissipation at 25°C, 2 A surge current capability, 0.8–1.0 V forward voltage at 100 mA, and 0.025 µA max reverse leakage at 225 V.

Technical Context

This diode employs metallurgical bonding and double-plug construction for enhanced thermal stability and reliability under extreme temperature cycling. Its hermetically sealed glass package eliminates moisture ingress and supports operation from -65°C to +175°C without parameter drift.

The device exhibits low forward voltage (0.8–1.0 V at 100 mA) and ultra-low reverse leakage (≤0.025 µA at 225 V), enabling efficient clamping in high-impedance signal paths and precision voltage reference protection circuits.

Key Specifications

ParameterValue and Actual Design Meaning
DC Reverse Voltage (VRWM)225 V - Maximum continuous reverse-bias voltage before breakdown; defines clamping threshold in overvoltage protection.
Forward Voltage (VF)0.8–1.0 V at 100 mA - Low conduction loss enables minimal power dissipation in series-switching applications.
Max Operating Current200 mA at 25°C - Sustained forward current limit; derates linearly to 50 mA at 150°C.
Total Power Dissipation500 mW at 25°C - Thermal design basis; requires 3 mW/°C derating above ambient.
Surge Current (8.3 ms)2 A - Withstands short-duration transients common in inductive load switching and ESD events.
Reverse Leakage (IR)≤0.025 µA at 225 V - Ensures negligible standby current in high-impedance bias networks.

Pinout & Package

Hermetically sealed glass package with axial leads; cathode identified by blue band on body; lead material is copper-clad steel with tin/lead finish.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in clamping or rectification path; accepts up to 200 mA DC.
CathodeForward current exit / reverse-blocking terminalBanded end; withstands up to 225 V reverse bias; critical for polarity-sensitive protection circuits.

Key Features

FeatureDesign Value
Hermetically sealed glass packageEliminates moisture-induced failure modes; qualified for aerospace and downhole industrial environments.
Metallurgically bonded junctionImproves thermal interface resistance and long-term bond integrity under thermal cycling stress.
Double-plug constructionEnhances mechanical robustness and hermetic seal reliability during thermal shock and vibration.
Wide temperature operationSupports uninterrupted function across -65°C to +175°C without parameter re-characterization.

Applications

Power Supply ClampHigh-Temp Sensor Interface

Use Scenario: Clamping transient spikes on DC rails in avionics power converters.

IC Role / Device Role / Timing Role: Fast-switching voltage clamp protecting downstream regulators and FET gate drivers.

Use Value: 225 V VRWM and 2 A surge rating suppress >90% of MIL-STD-1275B Class III transients without degradation.

Use Scenario: Reverse-polarity protection in oil-well pressure sensor modules operating at 150°C.

IC Role / Device Role / Timing Role: Series blocking diode preventing damage from accidental battery reversal in harsh-environment telemetry units.

Use Value: Maintains ≤0.025 µA leakage and 50 mA rated current at 150°C-enabling stable bias in high-impedance Wheatstone bridges.

ESD-Sensitive Signal LineMilitary Radio Bias Network

Use Scenario: Input protection for RF front-end LNAs exposed to human-body-model ESD events.

IC Role / Device Role / Timing Role: Low-capacitance clamping diode shunting ESD energy to ground while preserving signal integrity.

Use Value: Sub-1 pF junction capacitance (inferred from glass package and small die) minimizes RF insertion loss below 2 GHz.

Use Scenario: Bias feed isolation in UHF transceiver synthesizer VCO control lines.

IC Role / Device Role / Timing Role: DC blocking and RF decoupling element maintaining stable tuning voltage under RF modulation.

Use Value: 0.8–1.0 V VF ensures minimal voltage drop in precision 5 V bias rails; hermetic seal prevents parametric shift in humid field deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LL483BSame die and electrical specs; plastic DO-35 package instead of hermetic glass.Limited to -65°C to +125°C operation; unsuitable for >125°C or high-humidity environments.Select LL483B only for cost-sensitive commercial-grade designs where hermeticity and extended temperature are not required.
CDLL483BSame electrical ratings; surface-mount SOD-323 package with tin/lead finish.No axial leads; requires rework of PCB layout; thermal resistance differs due to package geometry.Choose CDLL483B when automated assembly and board space reduction outweigh the need for axial-lead serviceability or legacy through-hole compatibility.

Compared with 1N483BUR/TR, LL483B sacrifices hermetic sealing and high-temperature capability for lower cost, while CDLL483B trades axial-leaded reliability and thermal performance for SMT manufacturability-neither is pin-compatible, and both require layout or thermal redesign.

Availability

1N483BUR/TR is available at Aetrix Electronics and suitable for avionics power clamping, downhole sensor protection, military radio bias networks, and ESD-critical RF interfaces requiring stable component supply across extended temperature and long lifecycle programs.

Supply support for 1N483BUR/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a semiconductor manufacturer specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

The 1N483BUR/TR belongs to Microsemi's legacy high-temperature switching diode product line, engineered for mission-critical applications demanding hermetic sealing, wide thermal range, and proven field reliability under extreme environmental stress.

FAQ

What is the maximum reverse voltage rating for the 1N483BUR/TR?

The 1N483BUR/TR has a DC reverse voltage (VRWM) rating of 225 V. This value represents the maximum continuous reverse-bias voltage the diode can withstand without entering breakdown. It is specified at 25°C and remains valid across the full -65°C to +175°C operating temperature range, making the 1N483BUR/TR suitable for high-voltage clamping in demanding environments.

Does the 1N483BUR/TR have a specified forward voltage, and under what conditions?

Yes, the 1N483BUR/TR has a forward voltage (VF) of 0.8–1.0 V at 100 mA forward current and 25°C ambient temperature. This low VF range reflects its metallurgically bonded junction and contributes to reduced conduction losses in series-switching or clamping configurations. The 1N483BUR/TR maintains stable VF behavior across its full temperature range due to hermetic packaging.

Is the 1N483BUR/TR suitable for use above 125°C?

Yes, the 1N483BUR/TR is explicitly rated for operation from -65°C to +175°C. Its hermetically sealed glass package and double-plug construction ensure parameter stability and long-term reliability at elevated temperatures. At 150°C, it retains a rated forward current of 50 mA with 1.0 mA/°C derating above that point-confirming suitability for downhole, engine bay, and avionics applications exceeding 125°C.

What does the "TR" suffix indicate in 1N483BUR/TR?

The "TR" suffix in 1N483BUR/TR denotes tape-and-reel packaging for automated surface-mount assembly. While the 1N483BUR/TR retains axial leads and is physically through-hole mountable, the TR variant is supplied on industry-standard 7-inch reels with embossed carrier tape, enabling pick-and-place handling. The electrical and thermal specifications of the 1N483BUR/TR are identical to the bulk or ammo-pack versions.

How does the hermetic glass package of the 1N483BUR/TR improve reliability compared to plastic diodes?

The hermetic glass package of the 1N483BUR/TR prevents moisture ingress, ionic contamination, and outgassing-key failure mechanisms in plastic-packaged diodes under thermal cycling or high-humidity conditions. This construction enables the 1N483BUR/TR to maintain consistent VF, IR, and VRWM over decades of field use in aerospace, oilfield, and military systems where long-term parametric stability is non-negotiable.

1N483BUR/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
DO-213AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
225 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 250 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-213AA
Operating Temperature - Junction:
-65°C ~ 175°C

1N483BUR/TR FAQ

1.How can I place an order for 1N483BUR/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N483BUR/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N483BUR/TR reliable?

The price and inventory of 1N483BUR/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N483BUR/TR is usually 5 days.

3.What payment methods are accepted for 1N483BUR/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N483BUR/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N483BUR/TR?

1N483BUR/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N483BUR/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N483BUR/TR?

For technical support, including 1N483BUR/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N483BUR/TR requirements.

6.How does Aetrix verify that 1N483BUR/TR is sourced from the original manufacturer or authorized distributors?

All 1N483BUR/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N483BUR/TR meets industry standards.

7.What is the process for return or replacement of 1N483BUR/TR?

All 1N483BUR/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N483BUR/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N483BUR/TR part is unused and in its original packaging.

Return procedure for 1N483BUR/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N483BUR/TR Tags

  • 1N483BUR/TR
  • 1N483BUR/TR PDF
  • 1N483BUR/TR Datasheet
  • 1N483BUR/TR Specifications
  • 1N483BUR/TR Images
  • Microchip Technology
  • Microchip Technology 1N483BUR/TR
  • Buy 1N483BUR/TR
  • 1N483BUR/TR Price
  • 1N483BUR/TR Distributor
  • 1N483BUR/TR Supplier
  • 1N483BUR/TR Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER