Diodes Incorporated 1N4934-T

Overview

1N4934-T from Diodes Incorporated is a 1.0A fast recovery rectifier diode in DO-41 package, rated for 100V peak repetitive reverse voltage (V_RRM), 1.2V forward voltage drop at 1.0A (V_FM), and 200ns reverse recovery time (t_RR); used in AC/DC input stage rectification for offline power supplies and auxiliary bias rails.

For engineers reviewing the 1N4934-T datasheet, 1N4934-T pinout, 1N4934-T application, or 1N4934-T equivalent, key selection criteria include V_RRM, I_O, t_RR, thermal resistance (R_θJA = 100°C/W), and surge rating (I_FSM = 30A).

Technical Context

This device employs a diffused junction structure to achieve fast switching with low forward conduction loss and controlled reverse recovery behavior. Its 200ns t_RR enables efficient operation in 50/60Hz and higher-frequency line-frequency rectification circuits where switching losses must be minimized.

Designed for single-phase, half-wave rectification under resistive or inductive loads, it supports 1.0A average output current at +75°C ambient when leads are maintained at ambient temperature at 9.5mm from case; derating applies for capacitive loads.

Key Specifications

Pinout & Package

DO-41 molded plastic package with axial leads; cathode identified by band marking; polarity-sensitive mounting; RoHS-compliant bright tin plating; UL 94V-0 flammability rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with RS1M-T and 1N4004-T, the 1N4934-T delivers optimal balance of speed (200ns), voltage rating (100V), and conduction loss (1.2V) for general-purpose 100V-class line rectification-making it preferred where efficiency and EMI control matter more than ultra-high V_RRM or lowest BOM cost.

Availability

1N4934-T is available at Aetrix Electronics and suitable for AC/DC power adapters, industrial control auxiliary supplies, and LED driver bulk charging requiring stable component supply and consistent DO-41 form factor.

Supply support for 1N4934-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 1N4933–1N4937 series belongs to Diodes' general-purpose fast recovery rectifier product line, engineered specifically for cost-sensitive, high-volume AC/DC front-end rectification in consumer, industrial, and lighting applications.

FAQ

What is the maximum junction temperature for continuous operation?

The 1N4934-T has an operating junction temperature range of –65°C to +150°C. For reliable long-term operation, junction temperature must remain below +150°C under worst-case conditions-including ambient temperature, power dissipation (I_O × V_FM), and PCB thermal design per R_θJA = 100°C/W.

Is the 1N4934-T suitable for use in a full-wave bridge configuration?

Yes-the 1N4934-T is commonly used as one leg in discrete full-wave bridge rectifiers. Its 100V V_RRM and 30A I_FSM support typical 120VAC input bridges; however, ensure each diode sees no more than 100V reverse bias and that thermal coupling between devices is managed to avoid localized overheating.

Does this diode require heatsinking in standard PCB layouts?

Heatsinking is not required for 1N4934-T at ≤1.0A average current and +75°C ambient when mounted per specification: leads trimmed to 9.5mm length from case and soldered to ≥100mm² copper area. At higher ambient or sustained load, thermal relief pads or additional copper pour improve reliability.

How does the 1N4934-T compare to Schottky rectifiers in the same current class?

Unlike Schottky diodes, the 1N4934-T uses a PN junction, enabling higher V_RRM (100V vs. typically ≤60V for 1A Schottkys) and lower reverse leakage at elevated temperatures-but with higher V_FM (1.2V vs. ~0.4–0.6V) and slower t_RR. It is preferred where reverse voltage margin or high-temperature stability outweighs ultra-low forward loss.