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Microchip Technology 1N5183E3
- Part No.:
- 1N5183E3
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- S, Axial
- Datasheet:
-
1N5183E3.pdf
- Description:
- DIODE GP 7.5KV 100MA S AXIAL
- Quantity:
- Payment:
- Shipping:
Inventory:6,703
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Product details
Overview
1N5183E3 from Microsemi is a hermetically sealed, voidless-glass high-voltage standard recovery rectifier diode rated for 7500 V working peak reverse voltage, 0.10 A average forward current at 55 °C, and 4 A non-repetitive surge current. It operates from −65 °C to +175 °C and is qualified for military-grade reliability in radar transmitters and X-ray power supplies.
For engineers reviewing the 1N5183E3 datasheet, 1N5183E3 pinout, 1N5183E3 application, or 1N5183E3 equivalent, this page delivers verified electrical ratings, thermal resistance (38 °C/W), RoHS-compliant tin/lead termination, and MIL-PRF-19500/279 qualification context specific to the 1N5183E3 variant.
Technical Context
This device belongs to Microsemi's S-package high-voltage rectifier family designed for failure-intolerant systems. Its triple-layer passivation and tungsten slug construction deliver low thermal resistance (38 °C/W) and radiation hardness per MicroNote 050.
The 1N5183E3 exhibits 10 V maximum forward voltage at 100 mA, ≤5 µA reverse leakage at 7500 V and 25 °C, and maintains stable breakdown behavior across −65 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 7500 V - Maximum sustainable peak reverse voltage across full operating temperature range |
| IO @ 55 °C | 0.10 A - Continuous average forward current capability with 50/60 Hz sine-wave input and 180° conduction |
| VF @ 100 mA | 10 V - Forward voltage drop defining conduction loss and thermal load under rated DC bias |
| IR @ VRWM | ≤5 µA @ 25 °C - Low leakage ensures minimal power loss and signal integrity in high-impedance HV hold-off circuits |
| RθJL | 38 °C/W - Junction-to-lead thermal resistance enables reliable power dissipation up to 1.5 W at 25 °C ambient |
| TJ & TSTG | −65 °C to +175 °C - Wide operating/storage range supports deployment in aerospace, defense, and industrial environments |
Pinout & Package
Hermetically sealed voidless hard glass S-package with tungsten slugs; cathode indicated by band; tin/lead or RoHS-compliant matte tin over copper terminals; weight ≈ 400 mg; package dimensions: BD = 0.065–0.110 in, BL = 0.190–0.215 in, LD = 0.029–0.033 in, LL = 1.00–1.25 in.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Accepts positive half-cycle current during rectification; bonded to tungsten slug for thermal conduction |
| Cathode | Forward current exit point | Marked by colored band; connects to output rail or filter capacitor in HV DC supply stages |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and contaminants, ensuring long-term parameter stability in humid or vacuum environments |
| Triple-layer passivation | Enhances surface insulation strength and prevents leakage path formation on glass surface under HV stress |
| Lowest reverse leakage (≤5 µA) | Reduces standby power loss and improves voltage hold-off margin in precision multiplier and pulse-forming networks |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose tolerance-critical for space and nuclear instrumentation |
Applications
| X-Ray Power Supplies | Radar Transmitter Modulators |
|---|---|
Use Scenario: High-voltage DC generation for X-ray tube anode bias using voltage-doubling or Cockcroft-Walton ladder networks. IC Role / Device Role / Timing Role: High-voltage standard recovery rectifier conducting during positive half-cycles while blocking >7 kV reverse potential. Use Value: 7500 V VRWM and ≤5 µA IR ensure stable DC output with minimal ripple and no catastrophic failure under intermittent overload. | Use Scenario: Pulse-forming network (PFN) charging and discharge switching in pulsed radar modulators. IC Role / Device Role / Timing Role: Catch diode and HV rectifier in resonant charging circuits handling repetitive 4 A surge peaks. Use Value: 4 A IZSM rating and 38 °C/W RθJL allow safe energy transfer without thermal runaway during high-duty-cycle operation. |
| Industrial HV Power Supplies | Military Communication Transceivers |
Use Scenario: AC/DC conversion in electrostatic precipitators and laser driver supplies requiring >5 kV isolation. IC Role / Device Role / Timing Role: Primary rectifier in series-connected transformer-secondary windings delivering regulated HV DC. Use Value: −65 °C to +175 °C operating range and MIL-PRF-19500/279 qualification support field-deployed reliability in uncontrolled ambient conditions. | Use Scenario: HV bias supply for traveling-wave tube (TWT) amplifiers in airborne HF/VHF transceivers. IC Role / Device Role / Timing Role: Hermetic rectifier providing stable anode voltage under vibration, shock, and thermal cycling. Use Value: Voidless glass construction and tungsten slug mounting prevent parametric drift and mechanical fracture in mobile platform deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5183 | Non-RoHS version; identical electrical specs and package; same VRWM, IO, VF, IR, and thermal resistance | No RoHS compliance; unsuitable for EU-based or environmentally restricted programs | Select 1N5183E3 when RoHS compliance is required; otherwise 1N5183 offers identical performance at lower cost |
| 1N5182E3 | 5000 V VRWM (vs. 7500 V); same 0.10 A IO, 10 V VF, 5 µA IR, and S-package form factor | Limited to ≤5 kV systems; cannot substitute directly in 7.5 kV designs without redesign | Choose 1N5182E3 only if system VRWM requirement is ≤5000 V and RoHS compliance is mandatory |
Compared with 1N5183 and 1N5182E3, the 1N5183E3 uniquely combines 7500 V VRWM, RoHS compliance, and MIL-PRF-19500/279-qualified reliability-making it the sole option for new RoHS-compliant 7.5 kV military or medical HV designs.
Availability
1N5183E3 is available at Aetrix Electronics and suitable for X-ray power supplies, radar transmitter modulators, and industrial HV power supplies requiring stable component supply with traceable sourcing and long lifecycle assurance.
Supply support for 1N5183E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5183E3 belongs to Microsemi's legacy S-package high-voltage rectifier product line, engineered specifically for failure-intolerant applications demanding hermetic sealing, radiation tolerance, and extended temperature operation.
FAQ
What is the maximum working peak reverse voltage for the 1N5183E3?
The 1N5183E3 has a working peak reverse voltage (VRWM) of 7500 V, validated across its full operating temperature range of −65 °C to +175 °C. This rating defines the highest repetitive peak reverse voltage the 1N5183E3 can sustain without breakdown under normal operating conditions, making it suitable for 7.5 kV-class power conversion stages.
Is the 1N5183E3 RoHS compliant?
Yes, the 1N5183E3 is RoHS compliant, as indicated by the "E3" suffix per Microsemi's nomenclature. The "e3" marking confirms matte tin termination meeting EU RoHS Directive 2011/65/EU requirements. Non-RoHS versions (e.g., 1N5183) are also available but lack this compliance.
What is the average forward current rating of the 1N5183E3 at 100 °C ambient?
The 1N5183E3 is rated for 0.060 A average rectified forward current (IO) at 100 °C ambient temperature, per the manufacturer's electrical characteristics table. This derating reflects thermal limitations in high-temperature enclosures and must be applied when designing for sustained operation above 55 °C.
Does the 1N5183E3 have military qualification?
No, the 1N5183E3 is a commercial-grade RoHS-compliant variant and does not carry JAN or JANTX qualification. Military qualification per MIL-PRF-19500/279 applies only to the 1N3644–1N3647 series. The 1N5183E3 retains hermetic sealing and radiation hardness but lacks formal military screening.
What package type does the 1N5183E3 use?
The 1N5183E3 uses Microsemi's standardized S-package: a hermetically sealed voidless hard glass case with tungsten slugs, tin/lead or RoHS-compliant matte tin terminals, and cathode polarity marked by a band. Dimensions are BD = 0.065–0.110 in, BL = 0.190–0.215 in, LD = 0.029–0.033 in, and LL = 1.00–1.25 in.
1N5183E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- S, Axial
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 7500 V
- Current - Average Rectified (Io):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 10 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- S, Axial
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5183E3 FAQ
1.How can I place an order for 1N5183E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5183E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5183E3 reliable?
The price and inventory of 1N5183E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5183E3 is usually 5 days.
3.What payment methods are accepted for 1N5183E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5183E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5183E3?
1N5183E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5183E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5183E3?
For technical support, including 1N5183E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5183E3 requirements.
6.How does Aetrix verify that 1N5183E3 is sourced from the original manufacturer or authorized distributors?
All 1N5183E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5183E3 meets industry standards.
7.What is the process for return or replacement of 1N5183E3?
All 1N5183E3 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5183E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5183E3 part is unused and in its original packaging.
Return procedure for 1N5183E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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