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Microchip Technology 1N5186US/TR
- Part No.:
- 1N5186US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N5186US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:3,987
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Product details
Overview
1N5186US/TR from Microsemi is a surface-mount fast recovery glass rectifier diode with 100 V working peak reverse voltage, 3.0 A average forward current at 25°C, and 400 ns reverse recovery time, used in high-reliability DC power supplies and military-grade bridge rectifiers.
For engineers reviewing the 1N5186US/TR datasheet, 1N5186US/TR pinout, 1N5186US/TR application, or 1N5186US/TR equivalent, key selection criteria include hermetic voidless-glass construction, Category I metallurgical bond integrity, junction temperature range (–65°C to +175°C), and compatibility with MIL-PRF-19500/424 screening options.
Technical Context
This device operates as a unidirectional power rectifier in switching and line-frequency applications, leveraging triple-layer passivation and tungsten slug thermal path for low thermal resistance (10°C/W junction-to-end-cap). Its controlled avalanche capability supports transient energy absorption without degradation.
The 1N5186US/TR uses a hermetically sealed voidless glass package (Package "E" / D-5B) with copper end caps and Sn/Pb finish, rated for 80 A forward surge current (8.3 ms half-sine) and compliant with EIA-481-B tape-and-reel packaging standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 100 V - Maximum continuous reverse voltage sustainable across full operating temperature range. |
| Average Rectified Forward Current (IO) | 3.0 A @ 25°C - Sustained DC output current capability in standard PCB-mounted rectifier configurations. |
| Reverse Recovery Time (trr) | 400 ns - Enables efficient operation in 20–100 kHz SMPS and high-frequency flyback catch circuits. |
| Forward Voltage (VF) | 0.9 V @ 9 A pulsed - Low conduction loss during transient surges, reducing thermal stress in high-dI/dt applications. |
| Junction Temperature Range | –65°C to +175°C - Supports deployment in aerospace, downhole, and extended-temperature industrial environments. |
| Thermal Resistance (RθJ-EC) | 10°C/W - Enables direct heat transfer from die to end cap, simplifying thermal design without heatsink requirement below 1.5 W dissipation. |
Pinout & Package
Package: Hermetically sealed voidless glass (Package "E" / D-5B), with copper end caps and Sn/Pb finish; cathode indicated by band; weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Accepts incoming AC or pulsating DC; bonded internally to tungsten slug for low-inductance current path. |
| Cathode | Rectified output terminal | Delivers unidirectional current; marked externally by band; connects to PCB pad with thermal mass for heat spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments. |
| Category I metallurgical bond | Guarantees interfacial integrity under mechanical shock (≥100 g) and thermal cycling (–65°C ↔ +175°C). |
| Controlled avalanche capability | Withstands 1000+ cycles of 600 V reverse transient without parameter shift, enabling use in snubberless designs. |
| Triple-layer passivation | Prevents surface leakage and corrosion-induced failure in salt fog or high-humidity operational conditions. |
Applications
| Avionics Power Supply | Military Radar Transmitter |
|---|---|
Use Scenario: Rectification of 400 Hz aircraft AC mains into regulated DC bus for flight control computers. IC Role / Device Role / Timing Role: Fast recovery rectifier in full-wave bridge configuration handling 2.5 A continuous load. Use Value: 400 ns trr minimizes switching losses at 400 Hz fundamental while hermetic seal ensures reliability at altitude. | Use Scenario: High-voltage pulse-forming network (PFN) charging circuit in ground-based radar modulators. IC Role / Device Role / Timing Role: Catch diode clamping PFN capacitor discharge transients up to 100 A peak. Use Value: 80 A surge rating and controlled avalanche prevent catastrophic failure during repeated high-energy pulses. |
| Downhole Oilfield Instrumentation | Spacecraft EPS Converter |
Use Scenario: Input rectification in DC-DC converters powering sensors inside drill-string telemetry modules at 150°C ambient. IC Role / Device Role / Timing Role: Primary rectifier in isolated flyback converter operating continuously at 150°C case temperature. Use Value: 0.7 A IO rating at 150°C and –65°C to +175°C junction range enable uninterrupted operation in extreme thermal gradients. | Use Scenario: Secondary-side rectification in radiation-hardened DC-DC converters on LEO satellite power distribution units. IC Role / Device Role / Timing Role: Output rectifier in synchronous-forward topology delivering 3.3 V/5 A to payload subsystems. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating in 10 krad(Si) total ionizing dose environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-3EYH01-M3/54 | Plastic SMD package (DO-214AC), 100 V VRWM, 3.0 A IO, but trr = 500 ns and max TJ = +150°C. | Lacks hermetic seal and Category I bond; unsuitable for vacuum or high-shock MIL-STD-810 applications. | Select only for commercial-grade cost-sensitive designs where radiation hardness and long-term hermeticity are not required. |
| ON Semiconductor MUR310SFT1G | Ultrafast recovery (trr = 75 ns), TO-277 package, 100 V VRWM, 3.0 A IO, but max TJ = +175°C and no military screening option. | Superior speed enables higher-frequency operation but lacks controlled avalanche and voidless-glass robustness for PFN/clamp use. | Prefer for high-efficiency SMPS >200 kHz; avoid where surge survivability and long-term hermetic stability are critical. |
Compared with VS-3EYH01-M3/54 and MUR310SFT1G, the 1N5186US/TR uniquely combines hermetic voidless-glass construction, Category I metallurgical bonding, and MIL-PRF-19500 screening eligibility-making it the only choice for mission-critical rectification where field failure is unacceptable.
Availability
1N5186US/TR is available at Aetrix Electronics and suitable for avionics power supplies, military radar transmitters, and downhole instrumentation requiring stable component supply with guaranteed long-term obsolescence management.
Supply support for 1N5186US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N5186US/TR belongs to Microsemi's legacy Scottsdale Division fast recovery rectifier family, engineered specifically for applications demanding hermetic sealing, radiation tolerance, and extended temperature operation beyond commercial-grade limits.
FAQ
What is the maximum junction temperature rating for the 1N5186US/TR?
The 1N5186US/TR has a specified junction temperature range of –65°C to +175°C. This wide range allows operation in extreme environments such as downhole oilfield tools and spacecraft power systems. The 1N5186US/TR maintains electrical performance within datasheet limits across this full span when mounted per recommended pad layout and thermal interface guidelines.
Does the 1N5186US/TR have a military-qualified version?
Yes-the 1N5186US/TR can be ordered with MIL-PRF-19500/424 screening by adding the MX prefix (e.g., MX1N5186US) for JANTX-level qualification. The 1N5186US/TR itself is the commercial surface-mount variant; its hermetic voidless-glass construction and Category I bond form the foundation for these qualified versions.
What is the reverse recovery time (trr) of the 1N5186US/TR and how is it measured?
The 1N5186US/TR has a maximum reverse recovery time (trr) of 400 ns, measured per JEDEC JESD282B standard at IF = 9 A, IR = 9 A, di/dt = 100 A/μs, and VR = 30 V. This value reflects the time between zero-crossing of forward current and decay to 25% of peak reverse current, confirming suitability for 20–100 kHz switching applications.
Is the 1N5186US/TR compatible with lead-free reflow soldering processes?
No-the 1N5186US/TR features Sn/Pb finish on copper end caps and is rated for maximum solder temperature of 260°C for 10 seconds. It is not compatible with Pb-free reflow profiles (typically 260°C+ for >60 s). For RoHS-compliant alternatives, consult Microchip's current-generation rectifier portfolio with matte tin terminations.
How does the voidless-glass construction of the 1N5186US/TR improve reliability compared to plastic-packaged diodes?
The voidless-glass construction of the 1N5186US/TR prevents moisture penetration, outgassing, and interfacial delamination under thermal cycling or vacuum exposure-key failure modes in plastic packages. Combined with triple-layer passivation and Category I metallurgical bonds, this gives the 1N5186US/TR demonstrated field life exceeding 20 years in high-reliability deployments where the 1N5186US/TR is the sole rectifier solution specified.
1N5186US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 9 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 150 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5186US/TR FAQ
1.How can I place an order for 1N5186US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5186US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5186US/TR reliable?
The price and inventory of 1N5186US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5186US/TR is usually 5 days.
3.What payment methods are accepted for 1N5186US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5186US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5186US/TR?
1N5186US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5186US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5186US/TR?
For technical support, including 1N5186US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5186US/TR requirements.
6.How does Aetrix verify that 1N5186US/TR is sourced from the original manufacturer or authorized distributors?
All 1N5186US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5186US/TR meets industry standards.
7.What is the process for return or replacement of 1N5186US/TR?
All 1N5186US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5186US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5186US/TR part is unused and in its original packaging.
Return procedure for 1N5186US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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