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Microchip Technology 1N5187US/TR
- Part No.:
- 1N5187US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N5187US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,120
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Product details
Overview
1N5187US/TR from Microsemi is a surface-mount fast recovery glass rectifier diode rated for 200 V working peak reverse voltage, 3.0 A average forward current at 25°C, and 80 A forward surge current (8.3 ms), used in high-reliability power conversion circuits such as catch diodes and half-bridge outputs in aerospace and industrial power supplies.
For engineers reviewing the 1N5187US/TR datasheet, 1N5187US/TR pinout, 1N5187US/TR application, or 1N5187US/TR equivalent, key selection criteria include its voidless hermetically sealed glass package (Package E / D-5B), Category I metallurgical bond, 150 ns reverse recovery time, and -65°C to +175°C junction temperature range.
Technical Context
This device operates as a unidirectional power rectifier with controlled avalanche capability and low thermal resistance (10°C/W junction-to-end-cap). Its triple-layer passivation and tungsten slug construction support stable performance under thermal cycling and radiation exposure per MicroNote 050.
The 1N5187US/TR delivers fast recovery (trr = 150 ns) while maintaining low forward voltage (VF = 1.5 V @ 9 A pulsed) and low leakage (IR = 100 µA @ 200 V), enabling efficient switching in DC-DC converters and snubberless flyback topologies where reliability outweighs cost sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 200 V - Maximum continuous reverse bias before breakdown in operating temperature range. |
| Min Breakdown Voltage (VBR @ 50 µA) | 240 V - Ensures margin against transient overvoltage without conduction. |
| Forward Voltage (VF @ 9 A pulsed) | 1.5 V - Limits conduction loss and self-heating during high-current pulses. |
| Reverse Recovery Time (trr) | 150 ns - Enables use in 100–500 kHz switching power supplies with minimal switching loss. |
| Avg Rectified Current (IO) | 3.0 A @ 25°C / 0.7 A @ 150°C - Defines thermal derating envelope for PCB layout and heatsinking. |
| Forward Surge Current (IFSM) | 80 A @ 8.3 ms - Withstands inrush and fault currents without metallurgical failure. |
| Junction Temp Range | -65°C to +175°C - Supports operation in extreme environments including space-grade and downhole systems. |
Pinout & Package
Package: Hermetically sealed voidless hard glass (Package E / D-5B), with copper end caps (Sn/Pb finish), cathode band marking, and 539 mg mass. Thermal resistance is 10°C/W junction-to-end-cap.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Connected to source of forward current; must handle 80 A surge without bond wire lift-off. |
| Cathode | Output/return terminal | Marked by visible band; carries full rectified current and supports controlled avalanche during transients. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal shock or long-term storage. |
| Category I metallurgical bond | Guarantees mechanical integrity of die attach under >100,000 thermal cycles per MIL-STD-750 Method 1017. |
| Triple-layer passivation | Prevents surface leakage and ion migration in high-humidity or high-bias stress conditions. |
| Controlled avalanche rating | Enables safe clamping of inductive kickback without destructive failure up to specified peak reverse power. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for low-earth orbit applications. |
Applications
| Avionics Power Supply | Downhole Oilfield Electronics |
|---|---|
Use Scenario: Rectification in 28 V DC input stage of flight-critical DC-DC converters exposed to vibration and wide ambient temperature swings. IC Role / Device Role / Timing Role: Fast recovery rectifier in synchronous flyback output stage, handling 3 A continuous load with 80 A surge tolerance. Use Value: Voidless glass construction prevents parametric drift after 10,000+ thermal cycles; 175°C max junction temp enables operation without forced cooling. | Use Scenario: Catch diode in high-temperature (>150°C) motor drive inverters deployed in oil/gas wellhead control systems. IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs, absorbing inductive energy during switching transitions. Use Value: Controlled avalanche behavior safely clamps 600 V transients; Category I bond ensures no interfacial failure at 175°C junction. |
| Military Radar Transmitter | Satellite Power Management |
Use Scenario: Half-wave rectification in pulsed RF modulator power supplies subject to EMI and radiation exposure. IC Role / Device Role / Timing Role: Primary rectifier in high-voltage charging circuit, operating at 200 V VRWM with 150 ns trr. Use Value: Radiation-hardened structure avoids single-event burnout; Sn/Pb terminations ensure solder joint reliability under shock. | Use Scenario: Output rectification in redundant solar array regulators aboard LEO satellites with 15-year mission life. IC Role / Device Role / Timing Role: Surface-mount rectifier in isolated DC-DC bus converter, leveraging hermetic seal for vacuum compatibility. Use Value: Zero outgassing from voidless glass package prevents contamination of optical sensors; TID tolerance verified per MicroNote 050. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-3EY20 | 200 V VRWM, 3 A IO, but plastic SMC package (not hermetic); trr = 250 ns. | Lacks radiation hardness and military screening options; unsuitable for space or nuclear environments. | Select only for commercial-grade, cost-sensitive, non-safety-critical designs. |
| ON Semiconductor MUR320 | 200 V VRWM, 3 A IO, ultrafast trr = 75 ns, but epoxy package and no Category I bond. | Better switching speed but lower thermal robustness and no guaranteed avalanche rating. | Prefer for higher-frequency SMPS where surge immunity is secondary to efficiency. |
Compared with VS-3EY20 and MUR320, the 1N5187US/TR provides uniquely validated hermeticity, radiation tolerance, and controlled avalanche-making it irreplaceable in safety-critical, high-temperature, or space-constrained military and aerospace rectification roles.
Availability
1N5187US/TR is available at Aetrix Electronics and suitable for avionics power supplies, downhole electronics, military radar transmitters, and satellite power management requiring stable component supply across extended product lifecycles.
Supply support for 1N5187US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The 1N5187US/TR belongs to Microsemi's legacy Scottsdale Division hermetic rectifier family, engineered specifically for mission-critical power conversion where failure is not an option-including MIL-PRF-19500 qualified variants.
FAQ
What is the maximum junction temperature rating for the 1N5187US/TR?
The 1N5187US/TR has a specified junction and storage temperature range of -65°C to +175°C. This wide range enables operation in extreme environments such as downhole oilfield tools and avionics enclosures without external cooling. The 1N5187US/TR achieves this via tungsten slug construction and voidless glass sealing, which minimize thermal impedance and prevent internal delamination at high temperatures.
Does the 1N5187US/TR have a controlled avalanche rating?
Yes, the 1N5187US/TR features a controlled avalanche capability with defined peak reverse power capability. This allows it to safely clamp inductive voltage spikes-such as those from IGBT freewheeling paths-without destructive failure. The 1N5187US/TR's Category I metallurgical bond and triple-layer passivation ensure consistent avalanche behavior across temperature and lifetime, unlike standard plastic-packaged alternatives.
Is the 1N5187US/TR suitable for space applications?
Yes, the 1N5187US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and uses a voidless hermetic glass package with zero outgassing-critical for low-earth orbit missions. Its -65°C to +175°C rating, Sn/Pb terminations, and MIL-PRF-19500 screening options (e.g., MV1N5187US) make the 1N5187US/TR suitable for satellite power regulation and payload electronics where TID tolerance and long-term reliability are mandatory.
What is the reverse recovery time (trr) of the 1N5187US/TR and how does it affect switching performance?
The 1N5187US/TR has a maximum reverse recovery time (trr) of 150 ns, measured under standard conditions. This enables efficient operation in switching power supplies up to ~500 kHz, minimizing switching losses and EMI generation. The 1N5187US/TR achieves this speed while retaining high surge robustness-unlike ultrafast diodes that sacrifice IFSM for lower trr-making it ideal for ruggedized flyback and forward converters.
How does the voidless hermetic glass package of the 1N5187US/TR improve reliability compared to plastic SMD diodes?
The voidless hermetic glass package of the 1N5187US/TR eliminates moisture ingress, internal voids, and organic outgassing-preventing corrosion, parameter shift, and latent failures under thermal cycling or long-term storage. Unlike plastic-packaged diodes (e.g., SMC or DO-214AB), the 1N5187US/TR maintains stable VF, IR, and trr over decades, fulfilling MIL-PRF-19500 requirements for high-reliability programs where field return is unacceptable.
1N5187US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 9 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 200 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5187US/TR FAQ
1.How can I place an order for 1N5187US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5187US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5187US/TR reliable?
The price and inventory of 1N5187US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5187US/TR is usually 5 days.
3.What payment methods are accepted for 1N5187US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5187US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5187US/TR?
1N5187US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5187US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5187US/TR?
For technical support, including 1N5187US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5187US/TR requirements.
6.How does Aetrix verify that 1N5187US/TR is sourced from the original manufacturer or authorized distributors?
All 1N5187US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5187US/TR meets industry standards.
7.What is the process for return or replacement of 1N5187US/TR?
All 1N5187US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5187US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5187US/TR part is unused and in its original packaging.
Return procedure for 1N5187US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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