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Microchip Technology 1N5189US/TR
- Part No.:
- 1N5189US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N5189US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,816
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Product details
Overview
1N5189US/TR from Microsemi is a surface-mount fast recovery glass rectifier diode rated for 500 V working peak reverse voltage, 3.0 A average forward current at 25°C, and 400 ns reverse recovery time, used as a catch diode or half-bridge rectifier in high-reliability power supplies and aerospace DC/DC converters.
For engineers reviewing the 1N5189US/TR datasheet, 1N5189US/TR pinout, 1N5189US/TR application, or 1N5189US/TR equivalent, key selection criteria include its voidless hermetic glass package, Category I metallurgical bond, -65°C to +175°C junction temperature range, and MIL-PRF-19500 screening compatibility for high-reliability deployments.
Technical Context
This device operates as a unidirectional silicon PN junction rectifier with controlled avalanche capability and low thermal resistance (10°C/W junction-to-end-cap). Its fast recovery performance (trr = 400 ns) enables efficient switching in medium-frequency SMPS topologies up to ~100 kHz.
The 1N5189US/TR uses tungsten slugs and copper end caps with Sn/Pb finish inside a voidless hard-glass case, achieving robust mechanical integrity and radiation hardness per MicroNote 050. It supports pulsed forward currents up to 80 A (8.3 ms half-sine) and withstands soldering at 260°C for 10 s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 500 V - Maximum continuous reverse voltage applied across cathode-anode without breakdown |
| VBR min @ 50 µA | 550 V - Minimum breakdown voltage ensures margin against transient overvoltage events |
| VF max @ 9 A (pulsed) | 2.0 V - Forward conduction loss impacts efficiency and thermal design in high-current pulses |
| trr max | 400 ns - Enables use in medium-frequency switching circuits with reduced switching losses |
| IO avg @ 25°C / 150°C | 3.0 A / 0.7 A - Derating curve defines usable current envelope under varying ambient conditions |
| IFSM @ 8.3 ms | 80 A - Peak surge rating determines survivability during line transients or inrush events |
| TJ / TSTG | -65°C to +175°C - Extended temperature range supports operation in harsh environments including space and military platforms |
Pinout & Package
Package: Hermetically sealed voidless hard-glass case with tungsten slugs and copper end caps (Sn/Pb finish); marked with cathode band only; identified as Package "E" or D-5B per Microsemi documentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Connected to source of forward current; must be routed with low-inductance path for fast recovery performance |
| Cathode | Negative output terminal | Marked by visible band; carries full rectified current and interfaces with output filter or load return path |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk, ensuring long-term reliability in vacuum or humid environments |
| Category I metallurgical bond | Guarantees mechanical strength and thermal cycling endurance required for MIL-PRF-19500 qualified applications |
| Triple-layer passivation | Enhances surface stability and leakage immunity under high humidity, radiation, or contamination exposure |
| Controlled avalanche capability | Allows safe clamping of inductive kickback without destructive failure, supporting ruggedized flyback designs |
| Low thermal resistance (10°C/W) | Enables higher power density layout with minimal heatsinking in compact surface-mount configurations |
Applications
| Aerospace Power Converters | Military Radar Transmitters |
|---|---|
Use Scenario: DC/DC conversion in satellite bus power systems requiring zero-failure tolerance over 15+ year missions. IC Role / Device Role / Timing Role: Fast recovery rectifier in synchronous buck-derived topologies handling 28 V or 42 V primary inputs. Use Value: Voidless glass construction and -65°C to +175°C operation ensure uninterrupted function across orbital thermal extremes. | Use Scenario: Pulse-forming network (PFN) charging and discharge path protection in high-power radar modulators. IC Role / Device Role / Timing Role: Catch diode managing energy recirculation during rapid switch-off of magnetron or klystron drivers. Use Value: 80 A surge rating and controlled avalanche behavior prevent catastrophic failure during repetitive high-dV/dt events. |
| Avionics Flight Control Units | Downhole Oilfield Electronics |
Use Scenario: Rectification in dual-redundant 270 V DC power distribution subsystems for flight-critical actuators. IC Role / Device Role / Timing Role: Half-bridge leg diode in isolated gate driver auxiliary supplies with tight EMI constraints. Use Value: 400 ns trr minimizes reverse recovery noise, easing compliance with DO-160 Section 20 conducted emissions limits. | Use Scenario: AC-to-DC front-end rectification in high-temperature (>150°C) logging tools deployed in deep-well boreholes. IC Role / Device Role / Timing Role: Primary rectifier in thermally isolated power stage operating continuously at elevated ambient temperatures. Use Value: 0.7 A IO rating at 150°C and 10°C/W thermal resistance enable stable operation without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5189US (MIL-qualified MX prefix) | Identical electrical specs but screened per MIL-PRF-19500/424 Class B (JANTX level), with additional burn-in and lot traceability | Required for DoD procurement contracts and space-grade hardware where qualification evidence is mandatory | Select MX1N5189US when formal MIL-spec compliance documentation and test reports are contractually required |
| Vishay VS-3EYH05-M3/45 | Same VRWM (500 V), lower trr (35 ns), higher VF (2.2 V typ), plastic SMD package (DO-214AC), no hermetic seal | Suitable for commercial/industrial SMPS where cost and volume matter more than radiation hardness or vacuum operation | Choose VS-3EYH05-M3/45 for high-volume terrestrial applications needing faster recovery but accepting non-hermetic construction |
Compared with the 1N5189US/TR, the MX1N5189US adds formal military screening without altering core performance, while the VS-3EYH05-M3/45 trades hermetic reliability for ultrafast recovery and lower cost in non-critical environments.
Availability
1N5189US/TR is available at Aetrix Electronics and suitable for aerospace power converters, military radar transmitters, and avionics flight control units requiring stable component supply with guaranteed long-term continuity.
Supply support for 1N5189US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The 1N5189US/TR belongs to Microsemi's legacy Scottsdale Division hermetic rectifier product line, engineered specifically for mission-critical systems demanding zero-tolerance failure modes and extreme environmental resilience.
FAQ
What is the maximum working peak reverse voltage rating for the 1N5189US/TR?
The 1N5189US/TR has a specified working peak reverse voltage (VRWM) of 500 V. This value represents the highest continuous reverse-biased voltage the device can sustain across its terminals over its full operating temperature range (-65°C to +175°C) without breakdown. Exceeding this rating risks irreversible avalanche failure unless the device's controlled avalanche capability is intentionally leveraged within defined energy limits.
Does the 1N5189US/TR have a hermetic glass package, and why does that matter?
Yes, the 1N5189US/TR uses a voidless hermetically sealed hard-glass package with internal Category I metallurgical bonds. This construction prevents moisture ingress, outgassing, and interfacial degradation under thermal cycling or vacuum conditions-critical for aerospace, military, and downhole applications where field failure is unacceptable and long-term reliability must be guaranteed without maintenance.
What is the reverse recovery time (trr) specification for the 1N5189US/TR, and how does it affect circuit design?
The 1N5189US/TR has a maximum reverse recovery time (trr) of 400 ns. This parameter directly influences switching losses and EMI generation in medium-frequency power converters. Designers must account for this delay when selecting gate drive timing, snubber networks, and layout parasitics-especially in flyback or forward converters operating above 50 kHz-to avoid shoot-through or excessive voltage overshoot during commutation.
Can the 1N5189US/TR be used in high-temperature environments like downhole oilfield tools?
Yes, the 1N5189US/TR is rated for junction and storage temperatures from -65°C to +175°C, and delivers 0.7 A average forward current at 150°C ambient. Its low thermal resistance (10°C/W) and hermetic glass package make it suitable for extended operation in high-temperature downhole electronics, provided board-level thermal management maintains case temperature within specification limits.
Is the 1N5189US/TR compatible with lead-free reflow processes?
No-the 1N5189US/TR features tin/lead (Sn/Pb) terminations and is rated for soldering at 260°C for 10 seconds maximum. It is not compatible with standard lead-free reflow profiles (typically peaking at 260–265°C for longer durations). For RoHS-compliant designs, users must verify process compatibility through qualification testing or select an alternative part with matte tin terminations and appropriate thermal ratings.
1N5189US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 500 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 9 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 300 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 500 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5189US/TR FAQ
1.How can I place an order for 1N5189US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5189US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5189US/TR reliable?
The price and inventory of 1N5189US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5189US/TR is usually 5 days.
3.What payment methods are accepted for 1N5189US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5189US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5189US/TR?
1N5189US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5189US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5189US/TR?
For technical support, including 1N5189US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5189US/TR requirements.
6.How does Aetrix verify that 1N5189US/TR is sourced from the original manufacturer or authorized distributors?
All 1N5189US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5189US/TR meets industry standards.
7.What is the process for return or replacement of 1N5189US/TR?
All 1N5189US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5189US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5189US/TR part is unused and in its original packaging.
Return procedure for 1N5189US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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