Taiwan Semiconductor Corporation 1N5391G

Overview

1N5391G from Taiwan Semiconductor is a general-purpose silicon rectifier diode rated for 50 V PIV, 1.5 A average forward current, and 30 A peak surge current, with a typical forward voltage drop of 1.1 V at 1.5 A. It is used in AC/DC power supply input stages, transformerless power supplies, and low-frequency rectification in industrial control and appliance power circuits.

For engineers reviewing the 1N5391G datasheet, 1N5391G pinout, 1N5391G application, or 1N5391G equivalent, key selection criteria include PIV rating margin, thermal derating at elevated ambient temperatures, surge current capability under line transients, and DO-15 package mechanical compatibility with automated assembly.

Technical Context

The 1N5391G operates as a single-junction, planar-passivated silicon PN rectifier optimized for 50/60 Hz line-frequency applications. Its 50 V peak inverse voltage rating targets low-voltage secondary-side rectification, and its 1.5 A average forward current rating assumes case temperature ≤ 75 °C with adequate PCB copper area for heat dissipation.

Thermal performance is defined by a maximum junction temperature of 150 °C and a thermal resistance (R_θJL) of 40 °C/W (junction-to-lead), validated under pulsed test conditions (300 μs, 1% duty cycle). The device exhibits reverse recovery time < 4 μs and capacitance of 15 pF at 4 V, 1 MHz - characteristics consistent with standard-speed rectifiers.

Key Specifications

Pinout & Package

1N5391G is housed in a DO-15 axial-leaded plastic package (Ø3.60 mm × 25.40 mm min body length), with cathode indicated by a band on the body. Leads are tinned copper-clad steel, suitable for wave or hand soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier diode applications.

Compared with 1N4001G and 1N5391, the 1N5391G delivers higher continuous current handling (1.5 A vs. 1 A) while maintaining identical PIV and surge ratings, and adds halogen-free packaging required for modern industrial and consumer certifications.

Availability

1N5391G is available at Aetrix Electronics and suitable for AC/DC power supplies, industrial control systems, and appliance motor control boards requiring stable component supply and RoHS-compliant sourcing.

Supply support for 1N5391G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, automotive, and consumer markets since 1979.

The 1N5391G belongs to the 1N539xG series of general-purpose rectifiers designed specifically for cost-sensitive, high-volume AC/DC front-end applications where reliability, surge tolerance, and RoHS compliance are mandatory.

FAQ

What is the maximum junction temperature specification for the 1N5391G?

The 1N5391G has a maximum junction temperature (T_J(max)) of 150 °C, verified per JEDEC test conditions. This rating enables operation in enclosed industrial enclosures up to 70 °C ambient when mounted on ≥10 mm² of 2-oz copper. Exceeding this limit accelerates parametric drift and reduces long-term reliability. Thermal design must account for R_θJL = 40 °C/W and actual power dissipation in the 1N5391G.

Is the 1N5391G RoHS compliant and halogen-free?

Yes, the 1N5391G uses green compound packaging meeting JESD204B halogen-free requirements (<900 ppm bromine, <900 ppm chlorine, total halogens <1500 ppm). This distinguishes it from legacy 1N5391, which uses older molding compounds. The 1N5391G is certified to EU RoHS Directive 2011/65/EU and supports WEEE compliance for end-of-life processing.

What is the reverse recovery time of the 1N5391G, and does it support high-frequency switching?

The 1N5391G has a reverse recovery time (t_rr) of less than 4 μs under standard test conditions (I_F = 1.0 A, di/dt = 100 A/μs). It is not optimized for high-frequency SMPS use - its capacitance (15 pF at 4 V) and recovery behavior make it suitable only for 50/60 Hz and low-kHz line-frequency rectification. For switch-mode applications, fast-recovery or Schottky alternatives should be selected instead of the 1N5391G.

How does the 1N5391G compare to the 1N4001G in terms of surge current capability?

Both the 1N5391G and 1N4001G specify 30 A non-repetitive peak surge current (I_FSM) for an 8.3 ms half-sine wave. However, the 1N5391G sustains this surge at higher average current (1.5 A vs. 1.0 A), indicating superior thermal mass and leadframe design. In practice, the 1N5391G maintains safe junction temperature margins under repeated surges where the 1N4001G may exceed T_J(max) - a key distinction when selecting between these two for 1N5391G-based designs.

What marking code identifies the 1N5391G on the device body?

The 1N5391G is marked with "G" followed by a date code (e.g., "YWW") and factory code (e.g., "F"), per Taiwan Semiconductor's marking diagram. The "G" denotes green compound; "YWW" indicates year-week manufacturing date (e.g., "2309" = 2023, week 09); "F" identifies the fabrication site. No alphanumeric variant suffix beyond "G" appears on the 1N5391G body - distinguishing it from non-G versions like 1N5391.