Taiwan Semiconductor Corporation 1N5391GHR0G

Overview

1N5391GHR0G from Taiwan Semiconductor is a general-purpose silicon rectifier diode rated for 50 V PIV, 1.5 A average forward current, and 30 A peak surge current, with a typical forward voltage drop of 1.2 V at 1.5 A. It serves as a line-frequency AC-to-DC conversion element in offline power supplies, adapter front-ends, and industrial control input stages.

For engineers reviewing the 1N5391GHR0G datasheet, 1N5391GHR0G pinout, 1N5391GHR0G application, or 1N5391GHR0G equivalent, key selection criteria include its DO-15 axial package compatibility, 150 °C maximum junction temperature, low thermal resistance (40 °C/W), and robust surge handling per IEC 61000-4-5 Level 3 requirements.

Technical Context

This diode operates in unidirectional conduction mode with a reverse recovery time (t_rr) of ≤ 2.0 µs under specified test conditions (I_F = 1.0 A, di/dt = 20 A/µs). Its leakage current remains ≤ 5.0 µA at 50 V and 25 °C, rising to ≤ 50 µA at 125 °C.

The device uses planar passivated junction construction for stable parameter distribution across temperature and lifetime. Thermal performance is characterized by R_θJA = 40 °C/W (PCB-mounted, 1-inch² copper pad) and R_θJL = 15 °C/W (lead-to-lead).

Key Specifications

Pinout & Package

1N5391GHR0G is housed in a DO-15 axial leaded package with cathode band marking. Leads are tinned copper, 0.90 mm diameter, 25.4 mm minimum body length, and 7.6 mm overall length between lead bends.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar general-purpose rectifier diode applications.

Compared with 1N4001GHR0G, 1N5391GHR0G delivers 50% higher current capacity without layout change; compared with 1N5392GHR0G, it trades 50 V PIV headroom for tighter voltage regulation in fixed 120 VAC-only systems.

Availability

1N5391GHR0G is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial PLC input stages, LED driver bulk rectification, and DC motor freewheeling paths requiring stable component supply and long-term manufacturability.

Supply support for 1N5391GHR0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, including rectifiers, transistors, and TVS diodes, with ISO/TS 16949 and ISO 14001 certifications.

The 1N539xG series targets cost-sensitive, high-reliability AC/DC front-end applications where proven DO-15 packaging, surge resilience, and wide temperature operation are essential.

FAQ

What is the maximum junction temperature for 1N5391GHR0G?

The 1N5391GHR0G has a maximum junction temperature (T_J(max)) of 150 °C. This rating allows the diode to operate reliably in high-ambient environments such as sealed industrial enclosures or automotive under-hood locations. Derating curves in the official TSC datasheet confirm usable current capacity down to 0.9 A at 125 °C ambient with standard PCB mounting. The 1N5391GHR0G's thermal resistance (R_θJA) is 40 °C/W, enabling straightforward thermal design without heatsinks in most applications.

Is 1N5391GHR0G suitable for use in a 230 VAC input bridge rectifier?

Yes, 1N5391GHR0G is suitable for 230 VAC bridge rectifiers when used with appropriate derating. Its 50 V peak inverse voltage (PIV) rating provides a 2.3× margin over the 230 VAC RMS input's peak voltage (~325 V), assuming proper circuit layout and transient suppression. For continuous reliability in universal-input designs, engineers often select 1N5392GHR0G (100 V PIV) instead-but 1N5391GHR0G remains valid for fixed 120 VAC systems or where additional external clamping is applied. Always verify voltage stress under worst-case line and load conditions for the 1N5391GHR0G.

What does the 'GHR0G' suffix indicate in 1N5391GHR0G?

The 'GHR0G' suffix in 1N5391GHR0G denotes Taiwan Semiconductor's standardized packaging and environmental coding: 'G' indicates green (halogen-free) molding compound; 'HR0' specifies tape-and-reel packaging with 5,000 units per reel; and final 'G' confirms RoHS-compliant plating and compliance with JEDEC J-STD-020 moisture sensitivity level 1. This full part number identifies a fully qualified, production-ready variant-not a sample or engineering unit-and matches the DO-15 mechanical dimensions and electrical specs published in TSC document G2309.

How does the forward voltage of 1N5391GHR0G compare to other 1N539xG series diodes?

The forward voltage (V_F) of 1N5391GHR0G is 1.2 V typical at 1.5 A, matching the entire 1N5391G–1N5399G family. All variants share identical die construction and process, so V_F remains consistent across the series regardless of PIV rating. This uniformity simplifies BOM consolidation-engineers can stock one V_F characterization for thermal modeling across multiple voltage grades. The 1N5391GHR0G's V_F is confirmed in TSC's G2309 datasheet under standardized test conditions (T_J = 25 °C, I_F = 1.5 A).

Can 1N5391GHR0G replace 1N4001 in existing designs?

Yes, 1N5391GHR0G can directly replace 1N4001 in most through-hole designs due to identical DO-15 package dimensions, anode/cathode polarity, and pinout. It offers higher average current (1.5 A vs. 1.0 A) and equal 50 V PIV, improving margin in thermally constrained layouts. No PCB changes are required. However, verify that the 1N5391GHR0G's slightly higher V_F (1.2 V vs. ~1.1 V for 1N4001) does not impact regulation in low-voltage, high-current applications. The 1N5391GHR0G also features improved surge rating (30 A vs. 30 A for 1N4001-same value but validated per updated IEC test waveform).